Vishay Intertechnology - SQD50P08-28_GE3

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SQD50P08-28_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQD50P08-28_GE3
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 100 mJ; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
Datasheet SQD50P08-28_GE3 Datasheet
In Stock37,870
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 48 A
Maximum Pulsed Drain Current (IDM): 190 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .028 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 100 mJ
JEDEC-95 Code: TO-252
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 80 V
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
37,870 $1.320 $49,988.400

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