Vishay Intertechnology - SQJ479EP-T1_BE3

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SQJ479EP-T1_BE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQJ479EP-T1_BE3
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; No. of Elements: 1; Terminal Form: GULL WING;
Datasheet SQJ479EP-T1_BE3 Datasheet
In Stock53,168
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton): 35 ns
Maximum Drain Current (ID): 32 A
Maximum Pulsed Drain Current (IDM): 100 A
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 4
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 90 ns
JESD-30 Code: R-PSSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .033 ohm
Avalanche Energy Rating (EAS): 80 mJ
Other Names: 742-SQJ479EP-T1_BE3DKR
742-SQJ479EP-T1_BE3TR
742-SQJ479EP-T1_BE3CT
Maximum Feedback Capacitance (Crss): 300 pF
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 80 V
Reference Standard: AEC-Q101
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