Vishay Intertechnology - SQJQ900E-T1_GE3

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SQJQ900E-T1_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQJQ900E-T1_GE3
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; JESD-30 Code: R-PSSO-G4; Minimum Operating Temperature: -55 Cel;
Datasheet SQJQ900E-T1_GE3 Datasheet
In Stock3,688
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton): 45 ns
Maximum Drain Current (ID): 60 A
Maximum Pulsed Drain Current (IDM): 400 A
Surface Mount: YES
No. of Terminals: 4
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 90 ns
JESD-30 Code: R-PSSO-G4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0039 ohm
Avalanche Energy Rating (EAS): 125 mJ
Other Names: SQJQ900E-T1_GE3DKR
SQJQ900E-T1_GE3TR
SQJQ900E-T1_GE3CT
Maximum Feedback Capacitance (Crss): 330 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 100 A
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