
Image shown is a representation only.
Manufacturer | Vishay Intertechnology |
---|---|
Manufacturer's Part Number | SQJQ904E-T1_GE3 |
Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 64 A; Package Shape: RECTANGULAR; No. of Elements: 2; |
Datasheet | SQJQ904E-T1_GE3 Datasheet |
In Stock | 81,907 |
NAME | DESCRIPTION |
---|---|
Avalanche Energy Rating (EAS): | 125 mJ |
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 64 A |
Maximum Pulsed Drain Current (IDM): | 300 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Minimum Operating Temperature: | -55 Cel |
No. of Terminals: | 4 |
Minimum DS Breakdown Voltage: | 40 V |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G4 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Reference Standard: | AEC-Q101 |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .0034 ohm |