Vishay Intertechnology - SQJQ904E-T1_GE3

SQJQ904E-T1_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQJQ904E-T1_GE3
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 64 A; Package Shape: RECTANGULAR; No. of Elements: 2;
Datasheet SQJQ904E-T1_GE3 Datasheet
In Stock81,907
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 125 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 64 A
Maximum Pulsed Drain Current (IDM): 300 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 4
Minimum DS Breakdown Voltage: 40 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Reference Standard: AEC-Q101
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0034 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
81,907 $1.350 $110,574.450

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