Vishay Intertechnology - SQM100N10-10_GE3

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SQM100N10-10_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQM100N10-10_GE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
Datasheet SQM100N10-10_GE3 Datasheet
In Stock24,995
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 100 A
Maximum Pulsed Drain Current (IDM): 400 A
Surface Mount: YES
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0105 ohm
Avalanche Energy Rating (EAS): 280 mJ
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
24,995 $1.290 $32,243.550

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