Vishay Intertechnology - SQM110P06-8M9L_GE3

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SQM110P06-8M9L_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQM110P06-8M9L_GE3
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V; Avalanche Energy Rating (EAS): 211 mJ;
Datasheet SQM110P06-8M9L_GE3 Datasheet
In Stock4,456
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 211 mJ
Other Names: SQM110P06-8M9L_GE3-ND
SQM110P06-8M9L_GE3TR
SQM110P06-8M9L_GE3CT
SQM110P06-8M9L_GE3DKR
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 110 A
JEDEC-95 Code: TO-263AB
Maximum Pulsed Drain Current (IDM): 230 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 60 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .0089 ohm
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