Vishay Intertechnology - SQS420EN-T1_GE3

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SQS420EN-T1_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQS420EN-T1_GE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: UNSPECIFIED; Terminal Form: C BEND; Maximum Drain Current (ID): 8 A;
Datasheet SQS420EN-T1_GE3 Datasheet
In Stock13,596
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 5 mJ
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 8 A
Maximum Pulsed Drain Current (IDM): 32 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 5
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-XDSO-C5
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: C BEND
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Peak Reflow Temperature (C): 240
Maximum Drain-Source On Resistance: .028 ohm
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