Vishay Intertechnology - VS-40MT060WFHT

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 1150 W; Maximum Collector Current (IC): 150 A; Terminal Form: UNSPECIFIED;

IXYP20N65C3D1 by Littelfuse is an N-CHANNEL IGBT with 650V VCE, 50A IC, and 2.5V VCEsat. Ideal for POWER CONTROL applications, it features a single configuration with built-in diode and operates b/w -55 to 175 °C.

IKW75N60TXK by Infineon Technologies is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a single configuration with built-in diode, ideal for power control applications. The transistor offers fast switching with 69ns turn-on time and 401ns turn-off time at a max operating temperature of 150°C.

The Littelfuse IXYN82N120C3H1 is an N-CHANNEL IGBT with a max VCEsat of 3.2V and IC of 105A, ideal for POWER CONTROL applications. Featuring a package style of FLANGE MOUNT, it has a max VCE of 1200V and can operate in temperatures ranging from -55 to 150°C.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 312 W; Maximum Collector Current (IC): 50 A; Package Style (Meter): FLANGE MOUNT;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; Qualification: Not Qualified;

FP25R12W2T4BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max. voltage of 1200V, and max. current of 39A. Ideal for power control applications, it has a turn off time of 685ns and turn on time of 133ns. The package style is flange mount with a rectangular shape and isolated case connection.

IHW30N135R5XKSA1 by Infineon Technologies is an N-Channel IGBT with VCEsat of 1.95V, toff of 430ns, and Pmax of 330W. Ideal for high-power applications like industrial motor drives due to its high VCE voltage rating, low saturation voltage, and fast turn-off time.

FGH50N6S2D by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 75A max collector current. It has a turn-off time of 180ns and turn-on time of 28ns, suitable for power control applications. The transistor comes in a rectangular package with through-hole terminals and operates at a max temperature of 150°C.

IGB50N60TXT by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it ideal for power control applications. This insulated gate bipolar transistor comes in a surface-mount package with GULL WING terminals, suitable for high-power electronic systems operating at temperatures up to 175°C.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 735 W; Maximum Collector Current (IC): 160 A; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 40 A; No. of Elements: 1;

FGA30T65SHD by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and IC of 60A, ideal for power control applications. It has a turn-off time of 67.2ns, operating temperature range from -55 to 175 °C, and a collector-emitter voltage of 650V. The package style is flange mount with matte tin terminal finish in a rectangular shape.

Insulated Gate Bipolar Transistors; Terminal Finish: Matte Tin (Sn) - annealed; JESD-609 Code: e3;

Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

IKD04N60RATMA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 8A max collector current, and 20ns turn on time. Ideal for power control applications due to its 75W max power dissipation and built-in diode configuration. Package style is small outline with gull wing terminals.

IXYP20N65C3D1M by Littelfuse is an N-CHANNEL IGBT with 650V VCE, 18A IC, and 2.5V VCEsat. Ideal for POWER CONTROL applications, it features a single configuration with built-in diode and operates b/w -55 to 175 °C temperature range.

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 600 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 104 W; Maximum Collector Current (IC): 52 A; Terminal Form: THROUGH-HOLE;

APT50GP60BG by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 202ns and a turn-on time of 55ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals and operates at temperatures up to 150°C.