Xilinx - XC18V01PCG20I

The Texas Instruments SNC54AS870FH is a MIL-STD-883 Class B (Modified) rated TTL memory IC in a ceramic chip carrier package. With 28 terminals and operating temperatures ranging from -55°C to 125°C, it's ideal for military-grade applications requiring high reliability and performance. This surface-mount IC features a square package shape with no lead terminals, making it suitable for rugged environments.

47L16T-I/ST by Microchip Technology is a small outline memory IC with 2Kx8 organization, EEPROM+SRAM mixed memory type, and synchronous operating mode. It is ideal for industrial applications requiring a memory density of 16384 bit, fast access time of 400 ns, and operating temperature range from -40 to 85°C.

TMS2150-55DW by Texas Instruments is a 512x9 MEMORY CIRCUIT IC with 55ns access time, operating at 5V. It features a small outline package, GULL WING terminals, and can handle temperatures from 0 to 70°C. Ideal for applications requiring fast memory access in commercial-grade electronics.

SN74LS601ADW by Texas Instruments is a 64KX1 memory circuit IC with TTL technology. It operates asynchronously at 5V, with a memory density of 65536 bits. This small outline package is surface mountable and suitable for various commercial applications requiring reliable memory storage.

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 2; Package Shape: ROUND; JESD-30 Code: O-MRDB-N2; Operating Mode: ASYNCHRONOUS;

M36W216B85ZA1 from STMicroelectronics is a low-profile, asynchronous memory IC with a 3V nominal voltage. It features a 16-bit width and operates within -0 °C to 70 °C, making it ideal for commercial applications in compact electronics. With 1M words capacity, it's perfect for data storage needs.

M36W216BI70ZA1T from STMicroelectronics is a low-profile, asynchronous mixed memory IC featuring 16Mbit density and operates at 3V. It supports FLASH+SRAM technology with a max access time of 70ns. Ideal for compact applications requiring efficient data storage.

Other Memory ICs;

DS2401P/T&R by Maxim Integrated is a 64-bit memory circuit IC with a supply voltage range of 2.8V to 6V. Operating in asynchronous mode, it has a small outline package style and is suitable for industrial temperature grade applications. With a rectangular shape and dual terminal position, this CMOS technology device is designed for surface mount installation.

EPCQ128ASI16N by Intel is a 16MX8 NOR type memory IC with 3-STATE output, operating at up to 100 MHz clock frequency. It features a small outline package style, suitable for industrial applications requiring high-speed synchronous operation and a memory density of 134217728 bits.

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 14; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

TMS4C1050-3N by Texas Instruments is a CMOS MEMORY CIRCUIT IC with 16 terminals, operating at 5V. It has a max access time of 25ns and standby current of 0.005A. This IN-LINE package is ideal for commercial applications requiring reliable memory functionality in the temperature range of 0 to 70°C.

Other Memory ICs;

MEMORY CIRCUIT; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

47C16-I/SN by Microchip Technology is a synchronous EEPROM+SRAM memory IC with 2KX8 organization. It operates at a voltage range of 4.5V to 5.5V and has a memory density of 16384 bits. This small outline package is ideal for industrial applications requiring fast access times and reliable data storage.

Other Memory ICs;

TMS4C1070-40SD by Texas Instruments is a 20-terminal MEMORY CIRCUIT IC with 5V supply, 30ns access time, and 45mA max current. It operates b/w 0 to 70°C in COMMERCIAL grade applications requiring reliable memory storage solutions.

Other Memory ICs;

M36W108B100ZN6 from STMicroelectronics is a mixed memory IC featuring 1M x 8 organization with Flash+SRAM technology. It operates asynchronously at supply voltages of 2.7V to 3.6V and supports industrial applications with a max temp of 85 °C. Its compact design (11.8mm x 9.8mm) ensures efficient space utilization in electronic devices.

Other Memory ICs;