5 PPM/FIRST YEAR Crystal Oscillators 1,786

Reset All

Part	Manufacturer	Crystal or Resonator Type	Mounting Feature	Frequency Tolerance	Aging	Load Capacitance	Additional Features	Series Resistance	Frequency Stability	Minimum Operating Temperature	Terminal Finish	JESD-609 Code	Nominal Operating Frequency	Drive Level	Physical Dimension	Maximum Operating Temperature
NKS2JAB1-40.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	20 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	20 %	-20 Cel			40 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2JAB1-33.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	20 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	20 %	-20 Cel			33 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2NED1-25.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	80 ohm	30 %	-40 Cel			25 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
NKS2NEK1-32.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	50 %	-40 Cel			32 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
NKS2NAD1-30.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	30 %	-20 Cel			30 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2NED1-24.5760-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	80 ohm	30 %	-40 Cel			24.576 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
NKS2JAB1-38.4000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	20 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	20 %	-20 Cel			38.4 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
49SMLB25.0000-16GGC-E	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	16 pF	AT CUT; BULK	30 ohm	30 %	-20 Cel			25 MHz	100 uW	L11.5XB4.8XH4.0 (mm)/L0.453XB0.189XH0.157 (inch)	70 Cel
GC0800013	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR						8 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
FL2400135Z	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	18 pF	AT-CUT; TR, 7 INCH	50 ohm	30 %	-40 Cel	GOLD OVER NICKEL	e4	24 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)	85 Cel
GC2400014	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR						24 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
FW3740018Z	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR	80 ohm					37.4 MHz	10 uW	L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)
NKS2HAA1-27.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	80 ohm	10 %	-20 Cel			27 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2NEK1-32.7680-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	50 %	-40 Cel			32.768 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
49SMLB04.9152	Diodes Incorporated	SERIES - FUNDAMENTAL	SURFACE MOUNT	50 ppm	5 PPM/FIRST YEAR		AT-CUT; BULK	20 ohm	100 %	-20 Cel			4.9152 MHz	100 uW		70 Cel
NKS2NAD1-52.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	30 %	-20 Cel			52 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2HAA1-20.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	80 ohm	10 %	-20 Cel			20 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2HAA1-32.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	10 %	-20 Cel			32 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
GC0490006	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR						4.9 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
NKS2JAB1-24.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	20 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	80 ohm	20 %	-20 Cel			24 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
US4000004	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR							10 uW	L1.65XB1.25XH0.3 (mm)/L0.065XB0.049XH0.012 (inch)
NKS2NAD1-48.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	30 %	-20 Cel			48 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
FW2400001	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR, 7 INCH	70 ohm	50 %	-20 Cel			24 MHz	10 uW	L2.0XB1.6XH0.45 (mm)/L0.079XB0.063XH0.018 (inch)	70 Cel
FW3200018	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR	100 ohm					32 MHz	10 uW	L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)
NKS2NED1-24.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	80 ohm	30 %	-40 Cel			24 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
NKS2NED1-38.4000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	30 %	-40 Cel			38.4 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
GF0400006	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR						4 MHz	100 uW	L11.7XB4.8XH3.0 (mm)/L0.461XB0.189XH0.118 (inch)
NKS2NED1-32.7680-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	30 %	-40 Cel			32.768 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
NKS2JAB1-24.5760-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	20 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	80 ohm	20 %	-20 Cel			24.576 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
GC1880001	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR						18.8 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
NKS2JAB1-27.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	20 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	80 ohm	20 %	-20 Cel			27 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
FW4800016	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR	80 ohm					48 MHz	10 uW	L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)
GF0980001	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR						9.8 MHz	100 uW	L11.7XB4.8XH3.0 (mm)/L0.461XB0.189XH0.118 (inch)
GC2700048	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR						27 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
NKS2NAK1-54.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	50 %	-20 Cel			54 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2NAD1-25.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	80 ohm	30 %	-20 Cel			25 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2NAK1-20.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	80 ohm	50 %	-20 Cel			20 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
GC0400017	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR						4 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
NKS2NED1-32.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	30 %	-40 Cel			32 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
NKS2NED1-37.5000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	30 %	-40 Cel			37.5 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
NKS2NEK1-24.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	80 ohm	50 %	-40 Cel			24 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
GC2450016	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR						24.5 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
FW3840022Z	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR	80 ohm					38.4 MHz	10 uW	L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)
GC0400046	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR						4 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
FW3200010	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR	100 ohm					32 MHz	10 uW	L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)
NKS2NAK1-54.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	50 %	-20 Cel			54 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2NAK1-38.4000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	50 %	-20 Cel			38.4 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2JAB1-20.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	20 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	80 ohm	20 %	-20 Cel			20 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance