5 PPM/FIRST YEAR Crystal Oscillators 1,786

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Part	Manufacturer	Crystal or Resonator Type	Mounting Feature	Frequency Tolerance	Aging	Load Capacitance	Additional Features	Series Resistance	Frequency Stability	Minimum Operating Temperature	Nominal Operating Frequency	Drive Level	Physical Dimension	Maximum Operating Temperature
NKS2NAD1-32.7680-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	30 %	-20 Cel	32.768 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2JAB1-32.7680-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	20 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	20 %	-20 Cel	32.768 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
GC1600006	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR				16 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
US3200001	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR	100 ohm			32 MHz	10 uW	L1.65XB1.25XH0.3 (mm)/L0.065XB0.049XH0.012 (inch)
NKS2NAK1-26.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	80 ohm	50 %	-20 Cel	26 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
49SMLB14.31818-20GGC-E	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	40 ohm	30 %	-20 Cel	14.31818 MHz	100 uW	L11.5XB4.8XH4.0 (mm)/L0.453XB0.189XH0.157 (inch)	70 Cel
NKS2NAD1-38.4000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	30 %	-20 Cel	38.4 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
GC2000034	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR				20 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
NKS2NAD1-37.5000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	30 %	-20 Cel	37.5 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2NED1-40.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	30 %	-40 Cel	40 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
FW5310001	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR	80 ohm			53.1 MHz	10 uW	L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)
NKS2NEK1-24.5760-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	80 ohm	50 %	-40 Cel	24.576 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
NKS2HAA1-20.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	80 ohm	10 %	-20 Cel	20 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2NAK1-30.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	50 %	-20 Cel	30 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2NED1-27.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	80 ohm	30 %	-40 Cel	27 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
FW2400030	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR	120 ohm			24 MHz	10 uW	L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)
GC0730018	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR				7.3 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
GC3000021	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR				30 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
FW2400014	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR	120 ohm			24 MHz	10 uW	L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)
NKS2HAA1-52.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	10 %	-20 Cel	52 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
FW2600046Z	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR	120 ohm			26 MHz	10 uW	L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)
NKS2HAA1-25.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	80 ohm	10 %	-20 Cel	25 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2NAD1-38.4000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	30 %	-20 Cel	38.4 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2NEK1-30.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	50 %	-40 Cel	30 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
49SMLB12.5830-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	5 PPM/FIRST YEAR	20 pF	BT CUT; TAPE AND REEL	60 ohm	100 %	-20 Cel	12.583 MHz	100 uW	L12.0XB5.0XH4.3 (mm)/L0.472XB0.197XH0.169 (inch)	70 Cel
GC1220001	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR				12.2 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
NKS2NED1-40.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	30 %	-40 Cel	40 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
NKS2NEK1-20.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	80 ohm	50 %	-40 Cel	20 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
NKS2NEK1-27.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	80 ohm	50 %	-40 Cel	27 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
NKS2NEK1-37.5000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	50 %	-40 Cel	37.5 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
NKS2NAD1-26.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	80 ohm	30 %	-20 Cel	26 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2NAD1-20.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	80 ohm	30 %	-20 Cel	20 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2NED1-52.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	30 %	-40 Cel	52 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
FW3200008	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	5 PPM/FIRST YEAR		AT-CUT	100 ohm	50 %	-30 Cel	32 MHz	10 uW	L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)	85 Cel
NKS2HAA1-26.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	80 ohm	10 %	-20 Cel	26 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2HAA1-26.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	80 ohm	10 %	-20 Cel	26 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2NEK1-37.5000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	50 %	-40 Cel	37.5 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
NKS2NAD1-52.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	30 %	-20 Cel	52 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
GC1600038	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR				16 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
GC3000014	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR				30 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
NKS2NED1-32.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	30 %	-40 Cel	32 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
GC3300005	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR				33 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
NKS2JAB1-52.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	20 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	20 %	-20 Cel	52 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2HAA1-33.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	10 %	-20 Cel	33 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2HAA1-52.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	10 %	-20 Cel	52 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
GC0730017	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR				7.3 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
49SMLB250-18-E(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR	18 pF	AT-CUT; TR				25 MHz	100 uW
NKS2NED1-24.5760-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	80 ohm	30 %	-40 Cel	24.576 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance