5 PPM/FIRST YEAR Crystal Oscillators 1,786

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Part	Manufacturer	Crystal or Resonator Type	Mounting Feature	Frequency Tolerance	Aging	Load Capacitance	Additional Features	Series Resistance	Frequency Stability	Minimum Operating Temperature	Terminal Finish	JESD-609 Code	Nominal Operating Frequency	Drive Level	Physical Dimension	Maximum Operating Temperature
49SMLB25.0000-20GGC-E	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	30 ohm	30 %	-20 Cel			25 MHz	100 uW	L11.5XB4.8XH4.0 (mm)/L0.453XB0.189XH0.157 (inch)	70 Cel
NKS2HAA1-37.5000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	10 %	-20 Cel			37.5 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
GC0400057	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR						4 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
NKS2HAA1-20.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	80 ohm	10 %	-20 Cel			20 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
49SAB29.9990-12GHE-E(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT-CUT CRYSTAL; TAPE AND REEL	30 ohm	50 %	-40 Cel			29.999 MHz	100 uW		85 Cel
NKS2NED1-30.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	30 %	-40 Cel			30 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
NKS2NAK1-52.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	50 %	-20 Cel			52 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
49SMLB25.0000-18GHE(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	18 pF	AT CUT; TAPE AND REEL	30 ohm	50 %	-40 Cel			25 MHz	100 uW	L12.0XB5.0XH4.3 (mm)/L0.472XB0.197XH0.169 (inch)	85 Cel
GC0350016	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR						3.5 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
NKS2NEK1-52.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	50 %	-40 Cel			52 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
49SMLB25.0000-18GGC-E(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	18 pF	AT-CUT; TR	30 ohm	30 %	-20 Cel			25 MHz	500 uW	L12.0XB5.0XH4.3 (mm)/L0.472XB0.197XH0.169 (inch)	70 Cel
NKS2NED1-52.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	30 %	-40 Cel			52 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
NKS2NED1-48.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	30 %	-40 Cel			48 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
49SMLB04.0000-18GGC-E	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	18 pF	AT-CUT; BULK		30 %	-20 Cel			4 MHz	100 uW		70 Cel
NKS2NAD1-24.5760-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	80 ohm	30 %	-20 Cel			24.576 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2NEK1-33.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	50 %	-40 Cel			33 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
NKS2HAA1-30.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	10 %	-20 Cel			30 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
GC0400018	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR						4 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
NKS2NAD1-52.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	30 %	-20 Cel			52 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
GC2700015	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR						27 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
49SMLB11.0592-20-E(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	5 PPM/FIRST YEAR	20 pF	BT CUT; TAPE AND REEL	60 ohm	100 %	-20 Cel			11.0592 MHz	100 uW	L12.0XB5.0XH4.3 (mm)/L0.472XB0.197XH0.169 (inch)	70 Cel
NKS2NED1-54.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	30 %	-40 Cel			54 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
NKS2NAK1-26.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	80 ohm	50 %	-20 Cel			26 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
GC1200043	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR						12 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
FL2000059	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	9 pF	AT CUT; TR, 7 INCH	60 ohm	10 %	-30 Cel	GOLD OVER NICKEL	e4	20 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)	85 Cel
NKS2NAK1-25.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	80 ohm	50 %	-20 Cel			25 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2HAA1-38.4000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	10 %	-20 Cel			38.4 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
FW2600016	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR	120 ohm		-20 Cel			26 MHz	10 uW	L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)	70 Cel
NKS2JAB1-24.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	20 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	80 ohm	20 %	-20 Cel			24 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
GC0800032	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR						8 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
NKS2NED1-30.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	30 %	-40 Cel			30 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
GC3120001	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR						31.2 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
GC3000022	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR						30 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
49SMLB245-20-E(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	5 PPM/FIRST YEAR	20 pF	AT-CUT; TR	30 ohm	50 %	-20 Cel			24.576 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)	70 Cel
NKS2JAB1-24.5760-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	20 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	80 ohm	20 %	-20 Cel			24.576 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2NED1-48.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	30 %	-40 Cel			48 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
FW2500027	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR	120 ohm					25 MHz	10 uW	L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)
NKS2NED1-27.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	80 ohm	30 %	-40 Cel			27 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
NKS2NEK1-26.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	80 ohm	50 %	-40 Cel			26 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
NKS2NAK1-32.7680-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	50 %	-20 Cel			32.768 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2HAA1-32.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	10 %	-20 Cel			32 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2NAD1-32.7680-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	30 %	-20 Cel			32.768 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2HAA1-26.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	80 ohm	10 %	-20 Cel			26 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
GC0600012	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR						6 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
GC2820007	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR						28.2 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
GC1600058	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR						16 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
NKS2JAB1-52.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	20 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	20 %	-20 Cel			52 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2HAA1-40.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	10 %	-20 Cel			40 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance