5 PPM/FIRST YEAR Crystal Oscillators 1,786

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Part RoHS Manufacturer Crystal or Resonator Type Mounting Feature Frequency Tolerance Minimum Operating Frequency Maximum Operating Frequency Aging Load Capacitance Additional Features Series Resistance Frequency Stability Minimum Operating Temperature Terminal Finish JESD-609 Code Nominal Operating Frequency Drive Level Physical Dimension Manufacturer Series Maximum Operating Temperature

NKS2NAK1-52.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

60 ohm

50 %

-20 Cel

52 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2NAK1-24.5760-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

80 ohm

50 %

-20 Cel

24.576 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

GC1200032

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

12 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

NKS2JAB1-25.0000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

80 ohm

20 %

-20 Cel

25 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2JAB1-25.0000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

80 ohm

20 %

-20 Cel

25 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

49SMLB25.0000-20GGC-E(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT

30 ohm

30 %

-20 Cel

25 MHz

100 uW

12mm x 5mm x 4.3mm

70 Cel

NKS2JAB1-48.0000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

60 ohm

20 %

-20 Cel

48 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2NED1-30.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

60 ohm

30 %

-40 Cel

30 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

GC3100002

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

31 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

GC2000040

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

20 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

NKS2NAK1-24.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

80 ohm

50 %

-20 Cel

24 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2NEK1-38.4000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

60 ohm

50 %

-40 Cel

38.4 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

NKS2NED1-26.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

80 ohm

30 %

-40 Cel

26 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

NKS2NED1-20.0000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

80 ohm

30 %

-40 Cel

20 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

NKS2HAA1-52.0000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

60 ohm

10 %

-20 Cel

52 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

GC1030005

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

10.3 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

NKS2NEK1-24.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

80 ohm

50 %

-40 Cel

24 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

NKS2JAB1-27.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

80 ohm

20 %

-20 Cel

27 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

GC1430037

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

14.3 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

NKS2HAA1-20.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

80 ohm

10 %

-20 Cel

20 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2NAK1-27.0000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

80 ohm

50 %

-20 Cel

27 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2NED1-54.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

60 ohm

30 %

-40 Cel

54 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

NKS2NAD1-24.5760-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

80 ohm

30 %

-20 Cel

24.576 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

GC0400032

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

4 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

FW1600015

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

10 uW

L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)

NKS2NAK1-24.0000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

80 ohm

50 %

-20 Cel

24 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

GC0730006

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

7.3 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

NKS2NED1-20.0000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

80 ohm

30 %

-40 Cel

20 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

NKS2NED1-33.0000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

60 ohm

30 %

-40 Cel

33 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

GC0400014

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

4 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

NKS2JAB1-38.4000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

60 ohm

20 %

-20 Cel

38.4 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

GC0400021

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

4 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

NLS7NAD1-080

Diodes Incorporated

SERIES - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

AT CUT

70 ohm

30 %

-20 Cel

8 MHz

10 uW

7.2mm x 5.2mm x 1.3mm

70 Cel

NKS2JAB1-27.0000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

80 ohm

20 %

-20 Cel

27 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

FY2400054

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

18 pF

AT-CUT; TAPE AND REEL

50 ohm

30 %

-40 Cel

24 MHz

10 uW

L5.0XB3.2XH0.95 (mm)/L0.197XB0.126XH0.037 (inch)

85 Cel

NKS2NAK1-30.0000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

60 ohm

50 %

-20 Cel

30 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

GC1600074

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

16 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

NKS2HAA1-33.0000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

60 ohm

10 %

-20 Cel

33 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

GC4800001

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

48 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

GC0490013

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

4.9 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

NKS2NEK1-38.4000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

60 ohm

50 %

-40 Cel

38.4 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

FW3840026Z

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

80 ohm

38.4 MHz

10 uW

L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)

NKS2JAB1-33.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

60 ohm

20 %

-20 Cel

33 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2NAD1-48.0000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

60 ohm

30 %

-20 Cel

48 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

GC2400002

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

24 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

NKS2NAK1-30.0000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

60 ohm

50 %

-20 Cel

30 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

FW2500037Z

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

120 ohm

25 MHz

10 uW

L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)

GC1200020

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

12 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance