Diodes Incorporated Crystal Oscillators 2,400+

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Part	Manufacturer	Crystal or Resonator Type	Mounting Feature	Frequency Tolerance	Aging	Load Capacitance	Additional Features	Series Resistance	Frequency Stability	Minimum Operating Temperature	Terminal Finish	JESD-609 Code	Nominal Operating Frequency	Drive Level	Physical Dimension	Maximum Operating Temperature
49SMLB05.1234GHE	Diodes Incorporated	SERIES - FUNDAMENTAL
49SMLB03.6864GHE	Diodes Incorporated	SERIES - FUNDAMENTAL
NKS2JAB1-25.0000-16	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	20 ppm	3 PPM/FIRST YEAR	16 pF	AT CUT; BULK	80 ohm	20 %	-20 Cel			25 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)	70 Cel
FL1200078	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR	80 ohm			GOLD OVER NICKEL	e4	12 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)
GB2400038	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm	3 PPM/FIRST YEAR		AT-CUT						24 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
49SMLB30.000016HJE-E(T)	Diodes Incorporated	PARALLEL - 3RD OVERTONE
FL2210005	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR	60 ohm			GOLD OVER NICKEL	e4	22.1 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)
FL2400114Q	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; AEC-Q200; TR	60 ohm			GOLD OVER NICKEL	e4	24 MHz	10 uW	L3.2XB2.5XH0.68 (mm)/L0.126XB0.098XH0.027 (inch)
NKS2NED1-40.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	30 %	-40 Cel			40 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
49SMLB05.123418GGC-E	Diodes Incorporated	PARALLEL - FUNDAMENTAL
49SMLB05.12348GGC-E(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL
FH2600047	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR	80 ohm					26 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)
NKS2HAA1-25.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	20 pF	AT CUT; BULK	80 ohm	10 %	-20 Cel			25 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)	70 Cel
FL2710011	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR	60 ohm			GOLD OVER NICKEL	e4	27.1 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)
49SMLB03.686416GGC	Diodes Incorporated	PARALLEL - FUNDAMENTAL
49SMLB05.123432GGC(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL
FL5000014	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR	40 ohm			GOLD OVER NICKEL	e4	50 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)
49SMLB54.0000B32-E(Q)	Diodes Incorporated	PARALLEL - FUNDAMENTAL
FH2500007	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR	80 ohm					25 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)
FL2600174	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR	60 ohm			GOLD OVER NICKEL	e4	26 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)
FW5310001	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR	80 ohm					53.1 MHz	10 uW	L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)
NKS2NEK1-24.5760-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	80 ohm	50 %	-40 Cel			24.576 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
FL3200069	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR	40 ohm			GOLD OVER NICKEL	e4	32 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)
FL5000056	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR	40 ohm			GOLD OVER NICKEL	e4	50 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)
F61430012	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR						14.3 MHz	10 uW	L6.0XB3.5XH1.2 (mm)/L0.236XB0.138XH0.047 (inch)
NKS2HAA1-20.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	80 ohm	10 %	-20 Cel			20 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2NAK1-30.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	50 %	-20 Cel			30 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2NED1-27.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	80 ohm	30 %	-40 Cel			27 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
FX1430004	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR						14.3 MHz	10 uW	L6.0XB3.5XH1.1 (mm)/L0.236XB0.138XH0.043 (inch)
FL2600151	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR	60 ohm			GOLD OVER NICKEL	e4	26 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)
FL2000070	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR	60 ohm			GOLD OVER NICKEL	e4	20 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)
FW2400030	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR	120 ohm					24 MHz	10 uW	L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)
49SMLB30.0000B-E(T)	Diodes Incorporated	SERIES - 3RD OVERTONE
49SMLB30.0000B32(T)	Diodes Incorporated	PARALLEL - 3RD OVERTONE
49SMLB30.00008GGC	Diodes Incorporated	PARALLEL - 3RD OVERTONE
FL5000038	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR	40 ohm			GOLD OVER NICKEL	e4	50 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)
GC0730018	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR						7.3 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
GC3000021	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR						30 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
GB2500011	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm	3 PPM/FIRST YEAR		AT-CUT						25 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
FL1200088	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR	80 ohm			GOLD OVER NICKEL	e4	12 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)
FW2400014	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		5 PPM/FIRST YEAR		AT-CUT; TR	120 ohm					24 MHz	10 uW	L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)
49SMLB03.2000B(T)	Diodes Incorporated	SERIES - FUNDAMENTAL
NKS2JAB1-66.0000-32(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	20 ppm	3 PPM/FIRST YEAR	32 pF	AT CUT; TR	60 ohm	20 %	-20 Cel			66 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)	70 Cel
FH2700019	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR	80 ohm					27 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)
FL2600104	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR	60 ohm			GOLD OVER NICKEL	e4	26 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)
FL3200086	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR	40 ohm			GOLD OVER NICKEL	e4	32 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)
49SMLB54.000018GGC(T)	Diodes Incorporated	PARALLEL - 3RD OVERTONE
NKS2NED1-66.0000-32	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	3 PPM/FIRST YEAR	32 pF	AT CUT; BULK	60 ohm	30 %	-40 Cel			66 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)	85 Cel

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance