Diodes Incorporated Crystal Oscillators 2,400+

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Part RoHS Manufacturer Crystal or Resonator Type Mounting Feature Frequency Tolerance Minimum Operating Frequency Maximum Operating Frequency Aging Load Capacitance Additional Features Series Resistance Frequency Stability Minimum Operating Temperature Terminal Finish JESD-609 Code Nominal Operating Frequency Drive Level Physical Dimension Manufacturer Series Maximum Operating Temperature

NKS2NEK1-24.0000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

80 ohm

50 %

-40 Cel

24 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

FH2710006

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

80 ohm

27.1 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

GC2450016

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

24.5 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

FX1430027

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

14.3 MHz

10 uW

L6.0XB3.5XH1.1 (mm)/L0.236XB0.138XH0.043 (inch)

49SMLB03.2000GGC-E(T)

Diodes Incorporated

SERIES - FUNDAMENTAL

FW260WFMR1

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

9 pF

AT-CUT; TR, 7 INCH

60 ohm

10 %

-20 Cel

26 MHz

10 uW

L2.0XB1.6XH0.45 (mm)/L0.079XB0.063XH0.018 (inch)

85 Cel

FL3200035

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

40 ohm

GOLD OVER NICKEL

e4

32 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

FW3840022Z

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

80 ohm

38.4 MHz

10 uW

L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)

GC0400046

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

4 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

FL1200105

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

80 ohm

GOLD OVER NICKEL

e4

12 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

FL2000028

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

60 ohm

GOLD OVER NICKEL

e4

20 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

49SMLB40.00008GHE-E(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

49SMLB30.0000HJE(T)

Diodes Incorporated

SERIES - 3RD OVERTONE

49SMLB30.000018GGC(Q)

Diodes Incorporated

PARALLEL - 3RD OVERTONE

49SMLB03.6864GGC(T)

Diodes Incorporated

SERIES - FUNDAMENTAL

NKS2NAK1-66.0000-16(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT; TR

60 ohm

50 %

-20 Cel

66 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

70 Cel

FW3200010

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

100 ohm

32 MHz

10 uW

L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)

NKS2NAK1-54.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

60 ohm

50 %

-20 Cel

54 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

FL4800067

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

40 ohm

GOLD OVER NICKEL

e4

48 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

FH3840020Z

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

60 ohm

38.4 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

FL5200001

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

40 ohm

GOLD OVER NICKEL

e4

52 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

GA2700010

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

27 MHz

100 uW

L11.2XB4.8XH13.5 (mm)/L0.441XB0.189XH0.531 (inch)

NKS2NAK1-38.4000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

60 ohm

50 %

-20 Cel

38.4 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

49SMLB54.0000B18(Q)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

NKS2JAB1-20.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

80 ohm

20 %

-20 Cel

20 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2NAD1-32.7680-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

60 ohm

30 %

-20 Cel

32.768 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

49SMLB54.000032HJE-E(Q)

Diodes Incorporated

PARALLEL - 3RD OVERTONE

GA1350003

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

13.5 MHz

100 uW

L11.2XB4.8XH13.5 (mm)/L0.441XB0.189XH0.531 (inch)

49SMLB03.200032GHE-E(Q)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

FL3740003

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

40 ohm

GOLD OVER NICKEL

e4

37.4 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

GA0730003

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

7.3 MHz

100 uW

L11.2XB4.8XH13.5 (mm)/L0.441XB0.189XH0.531 (inch)

NKS2JAB1-32.7680-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

60 ohm

20 %

-20 Cel

32.768 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

GC1600006

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

16 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

US3200001

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

100 ohm

32 MHz

10 uW

L1.65XB1.25XH0.3 (mm)/L0.065XB0.049XH0.012 (inch)

FL1430008

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

80 ohm

GOLD OVER NICKEL

e4

14.3 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

NKS2NAK1-26.0000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

80 ohm

50 %

-20 Cel

26 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

49SMLB14.31818-20GGC-E

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

40 ohm

30 %

-20 Cel

14.31818 MHz

100 uW

L11.5XB4.8XH4.0 (mm)/L0.453XB0.189XH0.157 (inch)

70 Cel

NKS2NAD1-38.4000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

60 ohm

30 %

-20 Cel

38.4 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

FX2700005

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

27 MHz

10 uW

L6.0XB3.5XH1.1 (mm)/L0.236XB0.138XH0.043 (inch)

49SMLB03.6864GGC-E(Q)

Diodes Incorporated

SERIES - FUNDAMENTAL

GC2000034

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

20 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

FP2700006

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

27 MHz

10 uW

L7.0XB5.0XH1.0 (mm)/L0.276XB0.197XH0.039 (inch)

FY2400043

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

24 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

FY2450006

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

24.5 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

FL1100002

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

GOLD OVER NICKEL

e4

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

49SMLB54.000016GHE

Diodes Incorporated

PARALLEL - 3RD OVERTONE

F82500007

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

25 MHz

10 uW

L8.0XB4.5XH1.4 (mm)/L0.315XB0.177XH0.055 (inch)

NKS2NAD1-37.5000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

60 ohm

30 %

-20 Cel

37.5 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance