Diodes Incorporated Crystal Oscillators 2,400+

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Part RoHS Manufacturer Crystal or Resonator Type Mounting Feature Frequency Tolerance Minimum Operating Frequency Maximum Operating Frequency Aging Load Capacitance Additional Features Series Resistance Frequency Stability Minimum Operating Temperature Terminal Finish JESD-609 Code Nominal Operating Frequency Drive Level Physical Dimension Manufacturer Series Maximum Operating Temperature

FY1200011

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

18 pF

AT-CUT; TR, 7 INCH

60 ohm

30 %

-20 Cel

12 MHz

10 uW

L5.0XB3.2XH0.95 (mm)/L0.197XB0.126XH0.037 (inch)

70 Cel

FH1600017

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

150 ohm

16 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

FL1920047

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

80 ohm

GOLD OVER NICKEL

e4

19.2 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

NKS2HAA1-52.0000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

60 ohm

10 %

-20 Cel

52 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

FY4510002

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

45.1 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

FL2600092

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

60 ohm

GOLD OVER NICKEL

e4

26 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

49SMLB05.123416HJE-E(Q)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

49SMLB03.200016GHE-E(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

49SMLB30.00008GHE-E(T)

Diodes Incorporated

PARALLEL - 3RD OVERTONE

NES5HAA1-50.0000-08

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

8 pF

AT CUT; MIL-STD-883

40 ohm

10 %

-20 Cel

50 MHz

10 uW

5mm x 3.2mm x 0.9mm

70 Cel

49SMLB30.0000GGC-E(T)

Diodes Incorporated

SERIES - 3RD OVERTONE

49SMLB05.1234B32

Diodes Incorporated

PARALLEL - FUNDAMENTAL

NKS2NAD1-66.0000-16(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT; TR

60 ohm

30 %

-20 Cel

66 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

70 Cel

FW2600046Z

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

120 ohm

26 MHz

10 uW

L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)

NKS2HAA1-25.0000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

80 ohm

10 %

-20 Cel

25 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

49SMLB54.0000B18-E

Diodes Incorporated

PARALLEL - FUNDAMENTAL

49SMLB05.12348HJE-E(Q)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

NKS2NAD1-38.4000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

60 ohm

30 %

-20 Cel

38.4 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2NEK1-30.0000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

60 ohm

50 %

-40 Cel

30 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

49SMLB05.123432GHE-E(Q)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

49SMLB30.000018GGC

Diodes Incorporated

PARALLEL - 3RD OVERTONE

49SMLB54.000018HJE

Diodes Incorporated

PARALLEL - 3RD OVERTONE

49SMLB12.5830-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

20 pF

BT CUT; TAPE AND REEL

60 ohm

100 %

-20 Cel

12.583 MHz

100 uW

L12.0XB5.0XH4.3 (mm)/L0.472XB0.197XH0.169 (inch)

70 Cel

NES5NEK1-50.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT; MIL-STD-883

40 ohm

50 %

-40 Cel

50 MHz

10 uW

5mm x 3.2mm x 0.9mm

85 Cel

GC1220001

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

12.2 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

NKS2NED1-40.0000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

60 ohm

30 %

-40 Cel

40 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

FY1200129

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

12 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

FL1940006

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

80 ohm

GOLD OVER NICKEL

e4

19.4 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

F62700004

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

27 MHz

10 uW

L6.0XB3.5XH1.2 (mm)/L0.236XB0.138XH0.047 (inch)

NES5NAD1-08.0000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT; MIL-STD-883

40 ohm

30 %

-20 Cel

8 MHz

10 uW

5mm x 3.2mm x 0.9mm

70 Cel

FX2500004

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

25 MHz

10 uW

L6.0XB3.5XH1.1 (mm)/L0.236XB0.138XH0.043 (inch)

F94800031

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

48 MHz

10 uW

L5.0XB3.2XH1.2 (mm)/L0.197XB0.126XH0.047 (inch)

FL2710010

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

60 ohm

GOLD OVER NICKEL

e4

27.1 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

NKS2NEK1-20.0000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

80 ohm

50 %

-40 Cel

20 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

NKS2NEK1-27.0000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

80 ohm

50 %

-40 Cel

27 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

NKS2NEK1-37.5000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

60 ohm

50 %

-40 Cel

37.5 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

FL1220013

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

80 ohm

GOLD OVER NICKEL

e4

12.2 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

NES5NAD1-50.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT; MIL-STD-883

40 ohm

30 %

-20 Cel

50 MHz

10 uW

5mm x 3.2mm x 0.9mm

70 Cel

NKS2NAD1-26.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

80 ohm

30 %

-20 Cel

26 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

FX1430025

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

14.3 MHz

10 uW

L6.0XB3.5XH1.1 (mm)/L0.236XB0.138XH0.043 (inch)

FY2400053

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

8 pF

AT-CUT; TR, 7 INCH

50 ohm

10 %

-20 Cel

24 MHz

10 uW

L5.0XB3.2XH0.95 (mm)/L0.197XB0.126XH0.037 (inch)

70 Cel

49SMLB54.00008GHE(Q)

Diodes Incorporated

PARALLEL - 3RD OVERTONE

FH2400010

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

80 ohm

24 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

FL2700099

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

60 ohm

GOLD OVER NICKEL

e4

27 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

F62700017

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

27 MHz

10 uW

L6.0XB3.5XH1.2 (mm)/L0.236XB0.138XH0.047 (inch)

FH2600037Q

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; AEC-Q200; TR

70 ohm

26 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

FY2700053Q

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; AEC-Q200; TR

50 ohm

27 MHz

10 uW

L5.0XB3.2XH0.95 (mm)/L0.197XB0.126XH0.037 (inch)

NKS2NAD1-20.0000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

80 ohm

30 %

-20 Cel

20 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance