BOTTOM PIN Diodes 131

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	JEDEC-95 Code	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency
BAR9002ELSE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	3 mA	SINGLE	C BAND		POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER		125 Cel	SWITCHING	-55 Cel	GOLD	R-PBCC-N2	2.3 ohm	1			.15 W	.35 pF	HIGH VOLTAGE	.75 us		80 V	e4			SILICON	100 MHz
SMP1330-040LF	Skyworks Solutions	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		175 Cel	LIMITER	-55 Cel		R-PBCC-N2	1.9 ohm	1		Not Qualified	.75 W			.004 us		20 V		40	260	SILICON
MPL4700-206/TR	Microchip Technology	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	10 mA	SINGLE	X BAND	.15 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		150 Cel		-55 Cel		R-XBCC-N2	2 ohm									25 V				SILICON
MPL4701-206	Microchip Technology	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	10 mA	SINGLE	ULTRA HIGH FREQUENCY TO X BAND	.2 pF	POSITIVE-INTRINSIC-NEGATIVE	1	10 V	CHIP CARRIER	PIN Diodes	150 Cel	LIMITER	-55 Cel	GOLD	R-XBCC-N2	2.5 ohm									15 V	e4			SILICON	1000 MHz
MPL4700-206-HS	Microchip Technology	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	ULTRA HIGH FREQUENCY TO X BAND	.15 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		150 Cel		-55 Cel	GOLD	R-XBCC-N2	2 ohm									25 V	e4			SILICON
SMP1345-040LF	Skyworks Solutions	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		.2 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		175 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PBCC-N2	2 ohm	1		Not Qualified	.75 W			.1 us				40	260	SILICON
BAR8902LRHE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		150 Cel	SWITCHING		GOLD	R-XBCC-N2	1.5 ohm	1			.25 W		LOW DISTORTION	.8 us		80 V	e4			SILICON
MADP-030025-13140P	M/a-com Technology Solutions	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	GLASS		SINGLE		.56 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		175 Cel	SWITCHING			R-LBCC-N2	.65 ohm		ISOLATED	Not Qualified				2.8 us				NOT SPECIFIED	NOT SPECIFIED	SILICON
MPL4700-206	Microchip Technology	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	10 mA	SINGLE	ULTRA HIGH FREQUENCY TO X BAND	.15 pF	POSITIVE-INTRINSIC-NEGATIVE	1	10 V	CHIP CARRIER	PIN Diodes	150 Cel	LIMITER	-55 Cel	GOLD	R-XBCC-N2	2 ohm									25 V	e4			SILICON	1000 MHz
SMP1320-040LF	Skyworks Solutions	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	S BAND	.25 pF	POSITIVE-INTRINSIC-NEGATIVE	1	30 V	CHIP CARRIER	PIN Diodes	175 Cel	SWITCHING			R-PBCC-N2	.9 ohm	1		Not Qualified	.75 W	.23 pF		.4 us		50 V		40	260	SILICON	100 MHz
SMP1321-040LF	Skyworks Solutions	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY TO S BAND	.25 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		175 Cel	SWITCHING			R-PBCC-N2	2 ohm	1		Not Qualified	.75 W			.4 us				40	260	SILICON
SMP1331-040LF	Skyworks Solutions	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE	HIGH FREQUENCY TO X BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	30 V	CHIP CARRIER		150 Cel	ATTENUATOR; SWITCHING	-65 Cel		R-PBCC-N2	14.5 ohm				.25 W	.18 pF	LOW DISTORTION	.6 us				NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
SMP1340-040LF	Skyworks Solutions	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	5 mA	SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	CHIP CARRIER	PIN Diodes	175 Cel	SWITCHING	-55 Cel		R-XBCC-N2	1.2 ohm	1		Not Qualified	.75 W	.21 pF		.1 us		50 V		40	260	SILICON	100 MHz
SMP1345-518	Skyworks Solutions	PIN DIODE	BOTTOM	BUTT	4	YES	RECTANGULAR	PLASTIC/EPOXY		RING, 4 ELEMENTS	C BAND	.2 pF	POSITIVE-INTRINSIC-NEGATIVE	4		GRID ARRAY			ATTENUATOR; SWITCHING			R-PBGA-B4	2 ohm	1	ISOLATED	Not Qualified	.25 W			.1 us				30	260	SILICON
MPN3700RLRA	Onsemi	PIN DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CYLINDRICAL		125 Cel	SWITCHING		TIN LEAD	O-PBCY-T2	1 ohm			Not Qualified	.28 W				TO-92	200 V	e0			SILICON
MPN3404RLRE	Onsemi	PIN DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY	2 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CYLINDRICAL		125 Cel	SWITCHING		TIN LEAD	O-PBCY-T2	.85 ohm			Not Qualified	.4 W				TO-92	20 V	e0			SILICON
MPN3404RLRA	Onsemi	PIN DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY	2 pF	POSITIVE-INTRINSIC-NEGATIVE	1	15 V	CYLINDRICAL	PIN Diodes	125 Cel	SWITCHING		TIN LEAD	O-PBCY-T2	.85 ohm			Not Qualified	.4 W	1.3 pF			TO-92	20 V	e0		235	SILICON
NSP301MX3T5G	Onsemi	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY	.23 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	CHIP CARRIER		125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PBCC-N2	2 ohm					.23 pF				50 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	1 MHz
MPN3700RL	Onsemi	PIN DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CYLINDRICAL		125 Cel	SWITCHING		TIN LEAD	O-PBCY-T2	1 ohm			Not Qualified	.28 W		EUROPEAN PART NUMBER		TO-92	200 V	e0			SILICON
NSDP301MX3T5G	Onsemi	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER		150 Cel	ATTENUATOR; SWITCHING	-55 Cel	NICKEL PALLADIUM GOLD	R-PBCC-N2		1				.33 pF				80 V	e4	30	260	SILICON
MPN3700RLRE	Onsemi	PIN DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CYLINDRICAL		125 Cel	SWITCHING		TIN LEAD	O-PBCY-T2	1 ohm			Not Qualified	.28 W				TO-92	200 V	e0			SILICON
MPN3700ZL1	Onsemi	PIN DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CYLINDRICAL		125 Cel	SWITCHING		TIN LEAD	O-PBCY-T2	1 ohm			Not Qualified	.28 W		EUROPEAN PART NUMBER		TO-92	200 V	e0			SILICON
MPN3404	Onsemi	PIN DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY	2 pF	POSITIVE-INTRINSIC-NEGATIVE	1	15 V	CYLINDRICAL	PIN Diodes	125 Cel	SWITCHING		TIN LEAD	O-PBCY-T2	.85 ohm			Not Qualified	.4 W	1.3 pF	HIGH VOLTAGE		TO-92	20 V	e0		235	SILICON
MPN3404RLRM	Onsemi	PIN DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY	2 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CYLINDRICAL		125 Cel	SWITCHING		TIN LEAD	O-PBCY-T2	.85 ohm			Not Qualified	.4 W				TO-92	20 V	e0			SILICON
MPN3700RL1	Onsemi	PIN DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CYLINDRICAL		125 Cel	SWITCHING		TIN LEAD	O-PBCY-T2	1 ohm			Not Qualified	.28 W		EUROPEAN PART NUMBER		TO-92	200 V	e0			SILICON
MPN3404RLRP	Onsemi	PIN DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY	2 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CYLINDRICAL		125 Cel	SWITCHING		TIN LEAD	O-PBCY-T2	.85 ohm			Not Qualified	.4 W				TO-92	20 V	e0			SILICON
MPN3404ZL1	Onsemi	PIN DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY	2 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CYLINDRICAL		125 Cel	SWITCHING		TIN LEAD	O-PBCY-T2	.85 ohm			Not Qualified	.4 W		EUROPEAN PART NUMBER		TO-92	20 V	e0			SILICON
MPN3700RLRP	Onsemi	PIN DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CYLINDRICAL		125 Cel	SWITCHING		TIN LEAD	O-PBCY-T2	1 ohm			Not Qualified	.28 W				TO-92	200 V	e0			SILICON
MPN3700G	Onsemi	PIN DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	CYLINDRICAL	PIN Diodes	125 Cel	SWITCHING		TIN SILVER COPPER	O-PBCY-T2	1 ohm			Not Qualified	.28 W	1 pF	HIGH VOLTAGE		TO-92	200 V	e1		260	SILICON
MPN3404G	Onsemi	PIN DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY	2 pF	POSITIVE-INTRINSIC-NEGATIVE	1	15 V	CYLINDRICAL	PIN Diodes	125 Cel	SWITCHING		TIN SILVER COPPER	O-PBCY-T2	.85 ohm			Not Qualified	.4 W	1.3 pF	HIGH VOLTAGE		TO-92	20 V	e1		260	SILICON
MPN3404RL1	Onsemi	PIN DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY	2 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CYLINDRICAL		125 Cel	SWITCHING		TIN LEAD	O-PBCY-T2	.85 ohm			Not Qualified	.4 W		EUROPEAN PART NUMBER		TO-92	20 V	e0			SILICON
MPN3700	Onsemi	PIN DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	CYLINDRICAL	PIN Diodes	125 Cel	SWITCHING		TIN LEAD	O-PBCY-T2	1 ohm			Not Qualified	.28 W	1 pF	HIGH VOLTAGE		TO-92	200 V	e0		235	SILICON
MPN3700RLRM	Onsemi	PIN DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CYLINDRICAL		125 Cel	SWITCHING		TIN LEAD	O-PBCY-T2	1 ohm			Not Qualified	.28 W				TO-92	200 V	e0			SILICON
MPN3404RL	Onsemi	PIN DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY	2 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CYLINDRICAL		125 Cel	SWITCHING		TIN LEAD	O-PBCY-T2	.85 ohm			Not Qualified	.4 W		EUROPEAN PART NUMBER		TO-92	20 V	e0			SILICON
BAP142LX,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.26 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PBCC-N2	1.3 ohm	1		Not Qualified	.13 W	.25 pF		.11 us		50 V	e3	30	260	SILICON	100 MHz
BAP142LX	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.26 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PBCC-N2	1.3 ohm	1		Not Qualified	.13 W			.11 us			e3	30	260	SILICON
BAP1321LX,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.38 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel		R-PBCC-N2	1.3 ohm			Not Qualified	.13 W	.32 pF		.48 us		60 V				SILICON	100 MHz
BAP1321LX	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.38 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PBCC-N2	1.3 ohm			Not Qualified	.13 W			.48 us			e3			SILICON
BAP142L	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER			ATTENUATOR; SWITCHING			R-PBCC-N2	.9 ohm			Not Qualified	.315 W			.12 us						SILICON
BAP63LX,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PBCC-N2	1.5 ohm			Not Qualified	.135 W	.34 pF		.32 us		50 V	e3			SILICON	100 MHz
BAP51L	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	500 mA	SINGLE	S BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	CHIP CARRIER	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING			R-PBCC-N2	1.5 ohm			Not Qualified	.5 W	.23 pF		.55 us		60 V				SILICON	100 MHz
BAP50LX,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER	PIN Diodes	150 Cel		-65 Cel	Tin (Sn)	R-PBCC-N2	5 ohm	1		Not Qualified	.15 W	.4 pF		1 us		50 V	e3	30	260	SILICON	100 MHz
BAP55L,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.28 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER			ATTENUATOR; SWITCHING		TIN	R-PBCC-N2	.7 ohm			Not Qualified	.5 W			.28 us			e3			SILICON
BAP55L	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.28 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING			R-PBCC-N2	.7 ohm			Not Qualified	.5 W	.27 pF		.28 us		50 V				SILICON	100 MHz
BAP50LX	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		150 Cel		-65 Cel	TIN	R-PBCC-N2	5 ohm			Not Qualified	.15 W			1 us			e3	30	260	SILICON
BAP51L,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER			ATTENUATOR; SWITCHING		TIN	R-PBCC-N2	1.5 ohm			Not Qualified	.5 W			.55 us		60 V	e3			SILICON
BAP63LX	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PBCC-N2	1.5 ohm			Not Qualified	.135 W	.34 pF		.32 us		50 V	e3			SILICON	100 MHz
BAP55LX	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.28 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER			ATTENUATOR; SWITCHING		Tin (Sn)	R-PBCC-N2	.8 ohm	1		Not Qualified	.135 W			.27 us			e3	30	260	SILICON

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.