BOTTOM PIN Diodes 131

Reset All

Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency
BAR50-02L	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	HIGH FREQUENCY TO C BAND		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-XBCC-N2	4.5 ohm		Not Qualified	.25 W	.1 pF	LOW DISTORTION	1.1 us	50 V	e3			SILICON
BAR88-07LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING			R-XBCC-N4	2.5 ohm		Not Qualified	.25 W		LOW DISTORTION	.5 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR90-081LS	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	8	YES	RECTANGULAR	UNSPECIFIED	3 mA	1SE4			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		4	0 V	CHIP CARRIER	PIN Diodes		125 Cel	SWITCHING			R-XBCC-N8	2.3 ohm		Not Qualified	.1 W	.3 pF		.75 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
BAR50-02LE6327TR	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	HIGH FREQUENCY TO C BAND		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			150 Cel	ATTENUATOR; SWITCHING			R-XBCC-N2	4.5 ohm			.25 W		LOW DISTORTION	1.1 us			NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR90-07L4	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	150 Cel	SWITCHING	-55 Cel		R-XBCC-N4	2.3 ohm	1	Not Qualified	.25 W			.75 us	80 V				SILICON
BAR90-098LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	150 Cel	SWITCHING	-55 Cel		R-XBCC-N4	2.3 ohm		Not Qualified	.25 W			.75 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR90-02LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER	Rectifier Diodes	80 V	150 Cel	SWITCHING			R-XBCC-N2	2.3 ohm		Not Qualified	.25 W			.75 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR90-07LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	125 Cel	SWITCHING	-55 Cel	MATTE TIN	R-XBCC-N4	2.3 ohm		Not Qualified	.25 W			.75 us	80 V	e3			SILICON
BAR9002LSE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			150 Cel	SWITCHING			R-XBCC-N2	2.3 ohm			.15 W			.75 us	80 V				SILICON
BAR88-02LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	1 mA	SINGLE	L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING			R-XBCC-N2	2.5 ohm	1	Not Qualified	.25 W	.25 pF	LOW DISTORTION	.5 us	80 V				SILICON	100 MHz
BAR88-098LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING			R-XBCC-N4	2.5 ohm		Not Qualified	.25 W		LOW DISTORTION	.5 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR90-099LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	125 Cel	SWITCHING	-55 Cel		R-XBCC-N4	2.3 ohm		Not Qualified	.25 W			.75 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR88-099LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING		MATTE TIN	R-XBCC-N4	2.5 ohm		Not Qualified	.25 W		LOW DISTORTION	.5 us	80 V	e3			SILICON
BAR90-02ELS	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			125 Cel	SWITCHING	-55 Cel	GOLD	R-XBCC-N2	2.3 ohm	1		.15 W			.75 us	80 V	e4			SILICON
BAR90-02LS	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER	Rectifier Diodes	80 V	150 Cel	SWITCHING			R-XBCC-N2	2.3 ohm		Not Qualified	.15 W			.75 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR88-099L4	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.9 V	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	125 Cel	SWITCHING	-55 Cel	MATTE TIN	R-XBCC-N4	2.5 ohm		Not Qualified	.25 W		LOW DISTORTION	.5 us	80 V	e3			SILICON
BAR88-07L4	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.9 V	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	125 Cel	SWITCHING	-55 Cel		R-XBCC-N4	2.5 ohm		Not Qualified	.25 W		LOW DISTORTION	.5 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR90-098L4	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	150 Cel	SWITCHING	-55 Cel		R-XBCC-N4	2.3 ohm	1	Not Qualified	.25 W			.75 us	80 V				SILICON
BAR90-02L	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			150 Cel	SWITCHING		MATTE TIN	R-XBCC-N2	2.3 ohm		Not Qualified	.25 W			.75 us	80 V	e3			SILICON
BAR90-02EL	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			125 Cel	SWITCHING	-55 Cel	GOLD	R-XBCC-N2	2.3 ohm	1		.25 W			.75 us	80 V	e4			SILICON
BAR89-02LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	10 mA	SINGLE	L BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	1 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING			R-XBCC-N2	1.5 ohm	1	Not Qualified	.25 W	.25 pF	LOW DISTORTION	.8 us	80 V				SILICON	100 MHz
BAR89-02L	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	10 mA	SINGLE	L BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	1 V	CHIP CARRIER	PIN Diodes		125 Cel	SWITCHING			R-XBCC-N2	1.5 ohm		Not Qualified	.25 W	.25 pF	LOW DISTORTION	.8 us	80 V				SILICON	100 MHz
BA489	Infineon Technologies	PIN DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	PLASTIC/EPOXY		SINGLE			.8 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CYLINDRICAL							O-PBCY-T3	11 ohm		Not Qualified					50 V				SILICON
BAR88-02L	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	1 mA	SINGLE	L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	5 V	CHIP CARRIER	PIN Diodes		125 Cel	SWITCHING		MATTE TIN	R-XBCC-N2	2.5 ohm		Not Qualified	.25 W	.25 pF	LOW DISTORTION	.5 us	80 V	e3			SILICON	100 MHz
BAR90-099L4	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	150 Cel	SWITCHING	-55 Cel		R-XBCC-N4	2.3 ohm	1	Not Qualified	.25 W			.75 us	80 V				SILICON
BAR9002LRHE6327XT	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			125 Cel	SWITCHING	-55 Cel		R-XBCC-N2	2.3 ohm			.25 W			.75 us	80 V				SILICON
BAR8802LRHE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			150 Cel	SWITCHING		GOLD	R-XBCC-N2	2.5 ohm	1		.25 W		LOW DISTORTION	.5 us	80 V	e4			SILICON
BAR9002LRHE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			150 Cel	SWITCHING			R-XBCC-N2	2.3 ohm			.25 W			.75 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR64-02L	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	1 mA	SINGLE	MEDIUM FREQUENCY TO C BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	CHIP CARRIER	PIN Diodes		125 Cel	ATTENUATOR; SWITCHING			R-XBCC-N2	1.35 ohm		Not Qualified	.25 W	.23 pF	LOW DISTORTION	1.55 us	150 V				SILICON	100 MHz
BAR63-07L4	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	S BAND	1.2 V	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	.01 uA	2	35 V	CHIP CARRIER	Other Diodes	50 V	150 Cel	SWITCHING	-55 Cel	MATTE TIN	R-XBCC-N4	2 ohm		Not Qualified	.25 W			.075 us	50 V	e3			SILICON
BAR65-02L	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	5 mA	SINGLE			.9 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	CHIP CARRIER	PIN Diodes		125 Cel	SWITCHING		MATTE TIN	R-XBCC-N2	.9 ohm		Not Qualified	.25 W	.5 pF		.08 us	30 V	e3			SILICON	100 MHz
BAR63-02L	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING		GOLD	R-XBCC-N2	2 ohm	1	Not Qualified	.25 W	.3 pF		.075 us	50 V	e4			SILICON
BAR64-02LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	1 mA	SINGLE	MEDIUM FREQUENCY TO C BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	CHIP CARRIER	PIN Diodes		125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-XBCC-N2	1.35 ohm		Not Qualified	.25 W	.13 pF	LOW DISTORTION	1.55 us	150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
BAR6302LE6327XTMA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			150 Cel	SWITCHING		GOLD	R-XBCC-N2	2 ohm	1		.25 W			.075 us	50 V	e4			SILICON
BAR64-02EL	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	MEDIUM FREQUENCY TO C BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			125 Cel	ATTENUATOR; SWITCHING	-55 Cel	GOLD	R-XBCC-N2	1.35 ohm	1		.25 W		LOW DISTORTION	1.55 us	150 V	e4			SILICON
JDP4L08CTC	Toshiba	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED	10 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		2	1 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING			R-XBCC-N4	1.5 ohm		Not Qualified		.21 pF			30 V				SILICON	100 MHz
JDP2S05SC	Toshiba	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			150 Cel	SWITCHING			R-XBCC-N2	2.2 ohm							20 V				SILICON
JDP4P08CTC	Toshiba	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED	10 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		2	1 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING			R-XBCC-N4	1.5 ohm		Not Qualified		.21 pF			30 V				SILICON	100 MHz
JDP2S02ACT	Toshiba	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	1 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING			R-XBCC-N2	1.5 ohm		Not Qualified		.3 pF			30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
1SV99	Toshiba	PIN DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY	10 mA	SINGLE	ULTRA HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	CYLINDRICAL			125 Cel	ATTENUATOR; SWITCHING		Tin/Lead (Sn/Pb)	O-PBCY-T2	10 ohm		Not Qualified					50 V	e0			SILICON	100 MHz
JDP2S05CT	Toshiba	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	1 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		.42 pF	POSITIVE-INTRINSIC-NEGATIVE		1	1 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING			R-XBCC-N2	2.2 ohm		Not Qualified		.32 pF			20 V				SILICON	100 MHz
JDP2S08SC	Toshiba	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	1 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING			R-XBCC-N2	1.5 ohm		Not Qualified		.21 pF			30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
RKP436KER	Renesas Electronics	PIN DIODE	BOTTOM	NO LEAD	12	YES	RECTANGULAR	UNSPECIFIED	10 mA	SEPARATE, 6 ELEMENTS			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		6	1 V	CHIP CARRIER	PIN Diodes		125 Cel	SWITCHING			R-XBCC-N12	1.3 ohm		Not Qualified	.2 W	.35 pF			30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
RKP451KE	Renesas Electronics	PIN DIODE	BOTTOM	NO LEAD	8	YES	RECTANGULAR	UNSPECIFIED	10 mA	1SE4			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		4	1 V	CHIP CARRIER	PIN Diodes		125 Cel	SWITCHING			R-XBCC-N8	1.3 ohm		Not Qualified	.2 W	.35 pF			30 V				SILICON	100 MHz
RKP452KE	Renesas Electronics	PIN DIODE	BOTTOM	NO LEAD	8	YES	RECTANGULAR	UNSPECIFIED	10 mA	1SE4			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		4	1 V	CHIP CARRIER	PIN Diodes		125 Cel	SWITCHING			R-XBCC-N8	1.3 ohm		Not Qualified	.2 W	.35 pF			30 V				SILICON	100 MHz
RKP454KE	Renesas Electronics	PIN DIODE	BOTTOM	NO LEAD	8	YES	RECTANGULAR	UNSPECIFIED	10 mA	1SE4			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		4	1 V	CHIP CARRIER	PIN Diodes		125 Cel	SWITCHING			R-XBCC-N8	1.3 ohm		Not Qualified	.2 W	.35 pF			30 V				SILICON	100 MHz
RKP203KN	Renesas Electronics	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			.31 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			125 Cel	SWITCHING			R-PBCC-N2	1.5 ohm		Not Qualified	.1 W								SILICON
RKP453KE	Renesas Electronics	PIN DIODE	BOTTOM	NO LEAD	8	YES	RECTANGULAR	UNSPECIFIED	10 mA	1SE4			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		4	1 V	CHIP CARRIER	PIN Diodes		125 Cel	SWITCHING			R-XBCC-N8	1.3 ohm		Not Qualified	.2 W	.35 pF			30 V				SILICON	100 MHz

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.