Infineon Technologies PIN Diodes 363

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency	Reference Standard
BAR6302VH6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	SWITCHING	-55 Cel	TIN	R-PDSO-F2	2 ohm	1			.25 W			.075 us	50 V	e3			SILICON		AEC-Q101
BAR6503WE6327HTSA1	Infineon Technologies	PIN DIODE																			TIN			1								e3
BAR6405E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	C BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		125 Cel	ATTENUATOR; SWITCHING	-55 Cel	TIN	R-PDSO-G3	1.35 ohm	1			.25 W			1.55 us	150 V	e3			SILICON		AEC-Q101
BAR9002ELSE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	3 mA	SINGLE	C BAND		POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER		125 Cel	SWITCHING	-55 Cel	GOLD	R-PBCC-N2	2.3 ohm	1			.15 W	.35 pF	HIGH VOLTAGE	.75 us	80 V	e4			SILICON	100 MHz
BAR6404WH6327XTSA1	Infineon Technologies	PIN DIODE											POSITIVE-INTRINSIC-NEGATIVE								TIN			1								e3			SILICON
BAR6404E6327HTSA1	Infineon Technologies	PIN DIODE											POSITIVE-INTRINSIC-NEGATIVE								TIN			1								e3			SILICON
BA595E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	1.5 mA	SINGLE	MEDIUM FREQUENCY TO L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G2	7 ohm	1		Not Qualified		.26 pF		1.6 us	50 V	e3		260	SILICON	100 MHz
BAR66E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.6 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE						R-PDSO-G3		1		Not Qualified	.25 W			.7 us	150 V			260	SILICON
BAR6304E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	SWITCHING		TIN	R-PDSO-G3	2 ohm	1			.25 W			.075 us	50 V	e3			SILICON
BAR8802VH6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2.5 ohm	1			.25 W			.5 us	80 V	e3			SILICON
BAR6403WE6327HTSA1	Infineon Technologies	PIN DIODE											POSITIVE-INTRINSIC-NEGATIVE								TIN			1								e3			SILICON
BAR6402VH6327XTSA1	Infineon Technologies	PIN DIODE											POSITIVE-INTRINSIC-NEGATIVE								TIN			1								e3			SILICON
BAR6305E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		125 Cel	SWITCHING	-55 Cel	TIN	R-PDSO-G3	2 ohm	1			.25 W			.075 us	50 V	e3			SILICON		AEC-Q101
BAT1804E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	SWITCHING		TIN	R-PDSO-G3	.7 ohm	1						.12 us	35 V	e3			SILICON
BAR6302VH6327XT	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	SWITCHING		MATTE TIN	R-PDSO-F2	2 ohm				.25 W			.075 us	50 V	e3			SILICON		AEC-Q101
BAR9002ELE6327XTMA1	Infineon Technologies																				GOLD			1								e4
BAR6502VH6327XTSA1	Infineon Technologies	PIN DIODE																			MATTE TIN			1								e3
BAR88-02VE6327	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE	ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2.5 ohm	1			.25 W	.25 pF		.5 us	80 V	e3		260	SILICON	100 MHz
BAR63-04E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2	5 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		MATTE TIN	R-PDSO-G3	2 ohm	1		Not Qualified	.25 W	.25 pF		.075 us	50 V	e3		260	SILICON	100 MHz
BAR6303WE6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	SWITCHING		TIN	R-PDSO-G2	2 ohm	1			.25 W			.075 us	50 V	e3			SILICON
BAR8802VE6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2.5 ohm				.25 W			.5 us	80 V	e3			SILICON
BAR6304WH6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	SWITCHING		TIN	R-PDSO-G3	2 ohm	1			.25 W			.075 us	50 V	e3			SILICON
BAR6405WH6327XTSA1	Infineon Technologies	PIN DIODE											POSITIVE-INTRINSIC-NEGATIVE								TIN			1								e3			SILICON
BAR88-02VE6127	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2.5 ohm				.25 W		LOW DISTORTION	.5 us	80 V	e3			SILICON
BAR63-04W-E6327	Infineon Technologies	PIN DIODE				YES			5 mA						5 V		PIN Diodes	150 Cel					2 ohm	1				.25 pF		.075 us	50 V			260		100 MHz
BAR6304WE6327XT	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	SWITCHING			R-PDSO-G3	2 ohm				.25 W			.075 us	50 V				SILICON
BAR6403WE6327XT	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO C BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PDSO-G2	1.35 ohm				.25 W		LOW DISTORTION	1.55 us	150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON		AEC-Q101
BAR63-02V-E6327	Infineon Technologies	PIN DIODE				YES			5 mA						5 V		PIN Diodes	150 Cel					2 ohm	1				.25 pF		.075 us	50 V			260		100 MHz
BAR64-02V-H6327	Infineon Technologies	PIN DIODE				YES			1 mA						0 V		PIN Diodes	125 Cel			MATTE TIN		20 ohm	1				.17 pF		1.55 us	150 V	e3		260		100 MHz
BA595E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G2	7 ohm	1		Not Qualified				1.6 us	50 V	e3			SILICON
BAR65-02V-H6327	Infineon Technologies	PIN DIODE				YES			5 mA						0 V		PIN Diodes	125 Cel			MATTE TIN		.95 ohm	1				.5 pF		.08 us		e3		260		100 MHz
BAR61E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		COMPLEX	HIGH FREQUENCY	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	3		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G4		1	ANODE AND CATHODE	Not Qualified	.25 W			1 us		e3			SILICON
BAR64-05W-E6327	Infineon Technologies	PIN DIODE				YES			1 mA	COMMON CATHODE, 2 ELEMENTS				2	0 V		PIN Diodes	125 Cel					20 ohm	1				.17 pF		1.55 us	150 V			260		100 MHz
BAR141E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	HIGH FREQUENCY	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G3	12 ohm	1			.25 W		LOW DISTORTION	1 us	100 V	e3			SILICON
BAR151E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	HIGH FREQUENCY	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G3	12 ohm	1			.25 W		LOW DISTORTION	1 us	100 V	e3			SILICON
BAR63-02V-H6327	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	SMALL OUTLINE	PIN Diodes	125 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2 ohm	1			.25 W	.25 pF		.075 us	50 V	e3		260	SILICON	100 MHz
BAR63-03WE6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING			R-PDSO-G2	2 ohm	1		Not Qualified	.25 W	.25 pF		.075 us	50 V			260	SILICON	100 MHz
BAR6305WH6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	SWITCHING		TIN	R-PDSO-G3	2 ohm	1			.25 W			.075 us	50 V	e3			SILICON
BAR6306WH6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON ANODE, 2 ELEMENTS	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	SWITCHING		TIN	R-PDSO-G3	2 ohm	1			.25 W			.075 us	50 V	e3			SILICON
BAR6405E6327XT	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	C BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PDSO-G3	1.35 ohm				.25 W			1.55 us	150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON		AEC-Q101
BAR63-03WE6327XT	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE	S BAND		POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE		125 Cel	SWITCHING	-55 Cel		R-PDSO-G2	2 ohm				.25 W	.3 pF		.075 us	50 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz	AEC-Q101
BAR8902LRHE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		150 Cel	SWITCHING		GOLD	R-XBCC-N2	1.5 ohm	1			.25 W		LOW DISTORTION	.8 us	80 V	e4			SILICON
BAR50-02L	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	HIGH FREQUENCY TO C BAND	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-XBCC-N2	4.5 ohm			Not Qualified	.25 W	.1 pF	LOW DISTORTION	1.1 us	50 V	e3			SILICON
BXY44P-FPH	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	1 mA	COMMON CATHODE, 2 ELEMENTS		.75 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	FLATPACK	PIN Diodes	175 Cel	ATTENUATOR; SWITCHING		MATTE TIN	S-CDFP-F4	1200 ohm			Not Qualified	.5 W	.5 pF		.8 us	200 V	e3			SILICON	100 MHz
BXY43A	Infineon Technologies	PIN DIODE				YES											PIN Diodes	150 Cel										.1 pF		.25 us	150 V
BXY43-TP	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	1.5 ohm		ISOLATED	Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BAR5002VH6327XTSA1	Infineon Technologies	PIN DIODE																			MATTE TIN			1								e3
BA895	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	10 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING			R-PDSO-F2	7 ohm	1		Not Qualified		.23 pF		1.6 us	50 V				SILICON

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.