Infineon Technologies PIN Diodes 363

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency	Reference Standard
BXY44-T1S	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CXMW-G2	5 ohm			Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY44-T2H	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	5 ohm			Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON		ESA-SCC-5513/030
BA895E6433	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1.5 mA	SINGLE	MEDIUM FREQUENCY TO L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-F2	7 ohm			Not Qualified		.26 pF		1.6 us			NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
BXY43-PES	Infineon Technologies	PIN DIODE				YES			.02 mA	COMMON CATHODE, 2 ELEMENTS						2	50 V		PIN Diodes		150 Cel					70 ohm					.85 pF		.65 us						100 MHz
BA586	Infineon Technologies	PIN DIODE				YES			10 mA								50 V		PIN Diodes		125 Cel			Tin/Lead (Sn/Pb)		10 ohm					.23 pF			50 V	e0				100 MHz
BAR88-02LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	1 mA	SINGLE	L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING			R-XBCC-N2	2.5 ohm	1		Not Qualified	.25 W	.25 pF	LOW DISTORTION	.5 us	80 V				SILICON	100 MHz
BAR88-098LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING			R-XBCC-N4	2.5 ohm			Not Qualified	.25 W		LOW DISTORTION	.5 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR50-02L-E6327	Infineon Technologies	PIN DIODE				YES											1 V		PIN Diodes		125 Cel										.24 pF		1.1 us	50 V			260
BAR90-099LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	125 Cel	SWITCHING	-55 Cel		R-XBCC-N4	2.3 ohm			Not Qualified	.25 W			.75 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BXY42BB-S	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE			.15 pF	POSITIVE-INTRINSIC-NEGATIVE		1		MICROWAVE	PIN Diodes		175 Cel	SWITCHING			R-XDMW-F2				Not Qualified		.15 pF		.02 us	30 V				SILICON
BAR88-099LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING		MATTE TIN	R-XBCC-N4	2.5 ohm			Not Qualified	.25 W		LOW DISTORTION	.5 us	80 V	e3			SILICON
BXY43B	Infineon Technologies	PIN DIODE				YES													PIN Diodes		150 Cel										.18 pF		.35 us	150 V
BAR88-02LE6327	Infineon Technologies	PIN DIODE				YES			1 mA							1	0 V		PIN Diodes		125 Cel					2.5 ohm	1				.25 pF		.5 us	80 V			260		100 MHz
BAR14-1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.01 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G3	12 ohm	1		Not Qualified	.25 W	.25 pF	LOW DISTORTION	1 us	100 V	e3			SILICON	100 MHz
BAR90-02ELS	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			125 Cel	SWITCHING	-55 Cel	GOLD	R-XBCC-N2	2.3 ohm	1			.15 W			.75 us	80 V	e4			SILICON
BAR90-02LS	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER	Rectifier Diodes	80 V	150 Cel	SWITCHING			R-XBCC-N2	2.3 ohm			Not Qualified	.15 W			.75 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BA595E6433HTMA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G2	7 ohm			Not Qualified				1.6 us	50 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BXY43-T1S	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.45 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CXMW-G2	1.5 ohm			Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BA885E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G3	7 ohm	1		Not Qualified				1.6 us	50 V	e3			SILICON
BXY43-FPH	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.85 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-CDFP-F4	1.5 ohm			Not Qualified	.5 W	.6 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BXY42-TES	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.24 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	LONG FORM	PIN Diodes		175 Cel	SWITCHING		MATTE TIN	O-CELF-R2	2.5 ohm		ISOLATED	Not Qualified	.6 W	.24 pF	HIGH RELIABILITY	.05 us	50 V	e3			SILICON	100 MHz	ESA-SCC-5513/017
BXY43C	Infineon Technologies	PIN DIODE				YES													PIN Diodes		150 Cel										.3 pF		.35 us	150 V
BA779	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G3	7 ohm	1						1.6 us	50 V				SILICON		AEC-Q101
BAT18-06E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON ANODE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		1 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				SWITCHING		MATTE TIN	R-PDSO-G3	.7 ohm			Not Qualified						e3			SILICON
BAR50-02V-H6327	Infineon Technologies	PIN DIODE				YES											1 V		PIN Diodes		125 Cel			MATTE TIN			1				.24 pF		1.1 us	50 V	e3		260
BXY43P-FPP	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	.02 mA	COMMON CATHODE, 2 ELEMENTS			.85 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	S-CDFP-F4	1.5 ohm			Not Qualified	.5 W	.6 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BAR88-099L4	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.9 V	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	125 Cel	SWITCHING	-55 Cel	MATTE TIN	R-XBCC-N4	2.5 ohm			Not Qualified	.25 W		LOW DISTORTION	.5 us	80 V	e3			SILICON
BXY44-T1ES	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CXMW-G2	5 ohm			Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY44P-FPP	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	1 mA	COMMON CATHODE, 2 ELEMENTS			.75 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	FLATPACK	PIN Diodes		175 Cel	ATTENUATOR; SWITCHING		MATTE TIN	S-CDFP-F4	1200 ohm			Not Qualified	.5 W	.5 pF		.8 us	200 V	e3			SILICON	100 MHz
BAT1805E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	SWITCHING			R-PDSO-G3	.7 ohm							.12 us	35 V				SILICON
BAR17	Infineon Technologies	PIN DIODE				YES			.01 mA							1			PIN Diodes		150 Cel			Tin/Lead (Sn/Pb)		1200 ohm					.35 pF		4 us	100 V	e0				100 MHz
BXY42-T1(ES)	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.24 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	MICROWAVE	PIN Diodes		175 Cel	SWITCHING		MATTE TIN	O-CXMW-G2	2.5 ohm			Not Qualified	.35 W	.24 pF	HIGH RELIABILITY	.05 us	50 V	e3			SILICON	100 MHz	ESA-SCC-5513/017
BAR88-07L4	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.9 V	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	125 Cel	SWITCHING	-55 Cel		R-XBCC-N4	2.5 ohm			Not Qualified	.25 W		LOW DISTORTION	.5 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BXY44K	Infineon Technologies	PIN DIODE				YES													PIN Diodes		175 Cel										.4 pF		.5 us	200 V
BXY43-P1ES	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.75 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	1.5 ohm			Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BAR5003WE6327HTSA1	Infineon Technologies	PIN DIODE
BXY43-FPES	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.85 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-CDFP-F4	1.5 ohm			Not Qualified	.5 W	.6 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BAR17E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY		.55 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE				ATTENUATOR; SWITCHING			R-PDSO-G3				Not Qualified	.25 W		LOW DISTORTION	4 us					SILICON
BAR90-098L4	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	150 Cel	SWITCHING	-55 Cel		R-XBCC-N4	2.3 ohm	1		Not Qualified	.25 W			.75 us	80 V				SILICON
BAR80	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE			1.6 pF			1	3 V	SMALL OUTLINE	PIN Diodes			SWITCHING		TIN LEAD	R-PDSO-G4	.7 ohm		ANODE AND CATHODE	Not Qualified		1.3 pF			35 V	e0			SILICON
BXY43T1ESZZZA1	Infineon Technologies	PIN DIODE																																		NOT SPECIFIED	NOT SPECIFIED
BXY44-T2ES	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	5 ohm			Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY44P-FPS	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	1 mA	COMMON CATHODE, 2 ELEMENTS			.75 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	FLATPACK	PIN Diodes		175 Cel	ATTENUATOR; SWITCHING		MATTE TIN	S-CDFP-F4	1200 ohm			Not Qualified	.5 W	.5 pF		.8 us	200 V	e3			SILICON	100 MHz
BAR90-02L	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			150 Cel	SWITCHING		MATTE TIN	R-XBCC-N2	2.3 ohm			Not Qualified	.25 W			.75 us	80 V	e3			SILICON
BAR90-02EL	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			125 Cel	SWITCHING	-55 Cel	GOLD	R-XBCC-N2	2.3 ohm	1			.25 W			.75 us	80 V	e4			SILICON
BAR50-03W	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY TO C BAND		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		1	1 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G2	4.5 ohm	1		Not Qualified	.25 W	.24 pF	LOW DISTORTION	1.1 us	50 V				SILICON
BXY43P-FPES	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	.02 mA	COMMON CATHODE, 2 ELEMENTS			.85 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	S-CDFP-F4	1.5 ohm			Not Qualified	.5 W	.6 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY42-T1S	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.24 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	MICROWAVE	PIN Diodes		175 Cel	SWITCHING		MATTE TIN	O-CXMW-G2	2.5 ohm			Not Qualified	.35 W	.24 pF	HIGH RELIABILITY	.05 us	50 V	e3			SILICON	100 MHz

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.