Infineon Technologies PIN Diodes 363

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Manufacturers (1)
    • Infineon Technologies
    • Agilent Technologies
    • Broadcom
    • Diodes Incorporated
    • Gec Plessey Semiconductors
    • Hewlett Packard
    • M/a-com Technology Solutions
    • Micro Commercial Components
    • Microchip Technology
    • NXP Semiconductors
    • Nte Electronics
    • Onsemi
    • Osram Opto Semiconductors
    • ROHM
    • Renesas Electronics
    • STMicroelectronics
    • Skyworks Solutions
    • TE Connectivity
    • Toshiba
Diode Type
    • PIN DIODE
Terminal Position
    • AXIAL
    • BOTTOM
    • DUAL
    • END
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
Terminal Form
    • BUTT
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • WIRE
    • WRAP AROUND
No. of Terminals
    • 1
    • 12
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Surface Mount
    • NO
    • YES
Package Shape
    • ELLIPTICAL
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • GLASS
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Diode Resistive Test Current
    • .01 mA
    • .02 mA
    • .5 mA
    • 1 mA
    • 1.5 mA
    • 10 mA
    • 100 mA
    • 2 mA
    • 20 mA
    • 25 mA
    • 3 mA
    • 5 mA
    • 50 mA
    • 500 mA
Config
    • 1SE4
    • 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • COMMON ANODE, 2 ELEMENTS
    • COMMON CATHODE, 2 ELEMENTS
    • COMPLEX
    • RING, 4 ELEMENTS
    • SEPARATE, 2 ELEMENTS
    • SEPARATE, 3 ELEMENT
    • SEPARATE, 3 ELEMENTS
    • SEPARATE, 4 ELEMENTS
    • SEPARATE, 5 ELEMENTS
    • SEPARATE, 6 ELEMENTS
    • SERIES CONNECTED, 2 ELEMENTS
    • SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • SINGLE
Frequency Band
    • C BAND
    • HIGH FREQUENCY
    • HIGH FREQUENCY TO C BAND
    • HIGH FREQUENCY TO KU BAND
    • HIGH FREQUENCY TO L BAND
    • HIGH FREQUENCY TO S BAND
    • HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
    • HIGH FREQUENCY TO X BAND
    • KA BAND
    • KU BAND
    • L BAND
    • L BAND TO KU BAND
    • LOW FREQUENCY
    • MEDIUM FREQUENCY
    • MEDIUM FREQUENCY TO C BAND
    • MEDIUM FREQUENCY TO L BAND
    • MEDIUM FREQUENCY TO S BAND
    • MEDIUM FREQUENCY TO VERY HIGH FREQUENCY
    • MILLIMETER WAVE BAND
    • S BAND
    • ULTRA HIGH FREQUENCY
    • ULTRA HIGH FREQUENCY TO KU BAND
    • ULTRA HIGH FREQUENCY TO L BAND
    • ULTRA HIGH FREQUENCY TO S BAND
    • ULTRA HIGH FREQUENCY TO X BAND
    • VERY HIGH FREQUENCY
    • VERY HIGH FREQUENCY TO C BAND
    • VERY HIGH FREQUENCY TO KA BAND
    • VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
    • VERY LOW FREQUENCY TO L BAND
    • X BAND
Maximum Forward Voltage (VF)
    • .34 V
    • .4 V
    • .87 V
    • .9 V
    • 1 V
    • 1.1 V
    • 1.2 V
Maximum Diode Capacitance
    • .02 pF
    • .025 pF
    • .04 pF
    • .045 pF
    • .05 pF
    • .06 pF
    • .065 pF
    • .1 pF
    • .12 pF
    • .14 pF
    • .15 pF
    • .16 pF
    • .2 pF
    • .22 pF
    • .23 pF
    • .24 pF
    • .25 pF
    • .26 pF
    • .28 pF
    • .3 pF
    • .31 pF
    • .32 pF
    • .35 pF
    • .37 pF
    • .375 pF
    • .38 pF
    • .4 pF
    • .42 pF
    • .43 pF
    • .44 pF
    • .45 pF
    • .48 pF
    • .5 pF
    • .55 pF
    • .56 pF
    • .6 pF
    • .65 pF
    • .7 pF
    • .75 pF
    • .8 pF
    • .82 pF
    • .85 pF
    • .9 pF
    • 1 pF
    • 1.1 pF
    • 1.11 pF
    • 1.2 pF
    • 1.25 pF
    • 1.3 pF
    • 1.5 pF
    • 1.6 pF
    • 1.7 pF
    • 10 pF
    • 11 pF
    • 12 pF
    • 2 pF
    • 2.4 pF
    • 3 pF
    • 38 pF
    • 4 pF
    • 5 pF
    • 6 pF
    • 8 pF
Technology
    • POSITIVE-INTRINSIC-NEGATIVE
    • SCHOTTKY
Maximum Reverse Current
    • .01 uA
    • .05 uA
    • .1 uA
No. of Elements
    • 1
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Reverse Test Voltage
    • 0 V
    • 1 V
    • 10 V
    • 100 V
    • 15 V
    • 16 V
    • 180 V
    • 20 V
    • 3 V
    • 30 V
    • 35 V
    • 38 V
    • 40 V
    • 5 V
    • 50 V
    • 6 V
    • 60 V
    • 80 V
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • GRID ARRAY
    • IN-LINE
    • LONG FORM
    • MICROWAVE
    • POST/STUD MOUNT
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • Other Diodes
    • PIN Diodes
    • Rectifier Diodes
    • Varactors
Maximum Repetitive Peak Reverse Voltage
    • 100 V
    • 35 V
    • 50 V
    • 60 V
    • 75 V
    • 80 V
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 175 Cel
Application
    • ATTENUATOR
    • ATTENUATOR; LIMITER
    • ATTENUATOR; LIMITER; SWITCHING
    • ATTENUATOR; SWITCHING
    • GENERAL PURPOSE
    • LIMITER
    • LIMITER; SWITCHING
    • SWITCHING
Minimum Operating Temperature
    • -40 Cel
    • -55 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn)
    • NICKEL PALLADIUM GOLD
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN OVER NICKEL
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Lead (Sn/Pb)
JESD-30 Code
    • E-XALF-W2
    • O-CDMW-F2
    • O-CDMW-N2
    • O-CELF-R2
    • O-CEMW-N2
    • O-CXMW-G2
    • O-LALF-W2
    • O-LELF-R2
    • O-PBCY-T2
    • O-PBCY-T3
    • O-XALF-W2
    • O-XELF-R2
    • O-XEMW-N2
    • O-XRPM-F2
    • O-XUPM-N1
    • O-XUUC-N1
    • R-CBCC-N4
    • R-CDFP-F4
    • R-CDMW-F2
    • R-CDSO-F4
    • R-CEDB-N2
    • R-CXMW-G2
    • R-LBCC-N2
    • R-MDFM-F2
    • R-PBCC-N2
    • R-PBGA-B4
    • R-PDIP-T2
    • R-PDSO-C2
    • R-PDSO-F12
    • R-PDSO-F2
    • R-PDSO-F3
    • R-PDSO-F4
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G5
    • R-PDSO-G6
    • R-PDSO-N2
    • R-PSSO-G1
    • R-XBCC-N12
    • R-XBCC-N2
    • R-XBCC-N4
    • R-XBCC-N8
    • R-XDMW-F2
    • R-XDSO-N2
    • R-XUUC-N4
    • S-CDFP-F4
    • S-CDMW-F2
    • S-CUUC-N2
    • S-PDSO-C2
    • S-PDSO-N2
    • S-PDSO-N6
    • S-PDSO-N8
    • S-PSSO-C2
    • S-PSSO-N2
    • S-XDSO-N2
    • S-XUUC-N1
    • S-XUUC-N2
    • X-XXMW-F2
Maximum Diode Forward Resistance
    • .3 ohm
    • .35 ohm
    • .5 ohm
    • .6 ohm
    • .65 ohm
    • .7 ohm
    • .75 ohm
    • .77 ohm
    • .8 ohm
    • .85 ohm
    • .9 ohm
    • .95 ohm
    • 1 ohm
    • 1.1 ohm
    • 1.17 ohm
    • 1.2 ohm
    • 1.25 ohm
    • 1.3 ohm
    • 1.35 ohm
    • 1.5 ohm
    • 1.7 ohm
    • 1.8 ohm
    • 1.9 ohm
    • 10 ohm
    • 100 ohm
    • 11 ohm
    • 12 ohm
    • 1200 ohm
    • 14.5 ohm
    • 2 ohm
    • 2.2 ohm
    • 2.3 ohm
    • 2.5 ohm
    • 2.8 ohm
    • 20 ohm
    • 22 ohm
    • 3 ohm
    • 3.2 ohm
    • 3.3 ohm
    • 3.5 ohm
    • 3.7 ohm
    • 3.8 ohm
    • 4 ohm
    • 4.2 ohm
    • 4.5 ohm
    • 4.9 ohm
    • 40 ohm
    • 4200 ohm
    • 5 ohm
    • 5.5 ohm
    • 6.5 ohm
    • 7 ohm
    • 7.5 ohm
    • 70 ohm
    • 8 ohm
    • 9 ohm
Moisture Sensitivity Level (MSL)
    • 1
    • 2
Case Connection
    • ANODE
    • ANODE AND CATHODE
    • CATHODE
    • ISOLATED
Qualification
    • Not Qualified
Maximum Power Dissipation
    • .1 W
    • .125 W
    • .13 W
    • .135 W
    • .14 W
    • .15 W
    • .2 W
    • .24 W
    • .25 W
    • .26 W
    • .28 W
    • .3 W
    • .315 W
    • .35 W
    • .4 W
    • .415 W
    • .5 W
    • .6 W
    • .7 W
    • .715 W
    • .75 W
    • 1 W
    • 1.25 W
    • 1.3 W
    • 1.4 W
    • 1.5 W
    • 10 W
    • 2 W
    • 2.5 W
    • 3 W
    • 4.5 W
    • 6 W
    • 7.5 W
Nominal Diode Capacitance
    • .017 pF
    • .02 pF
    • .025 pF
    • .045 pF
    • .06 pF
    • .08 pF
    • .1 pF
    • .12 pF
    • .13 pF
    • .15 pF
    • .16 pF
    • .17 pF
    • .18 pF
    • .2 pF
    • .21 pF
    • .22 pF
    • .23 pF
    • .24 pF
    • .25 pF
    • .26 pF
    • .27 pF
    • .28 pF
    • .3 pF
    • .31 pF
    • .32 pF
    • .33 pF
    • .34 pF
    • .35 pF
    • .36 pF
    • .37 pF
    • .375 pF
    • .4 pF
    • .42 pF
    • .45 pF
    • .48 pF
    • .5 pF
    • .52 pF
    • .53 pF
    • .55 pF
    • .56 pF
    • .57 pF
    • .6 pF
    • .65 pF
    • .7 pF
    • .75 pF
    • .8 pF
    • .85 pF
    • .9 pF
    • 1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.5 pF
    • 1.7 pF
    • 2 pF
    • 2.2 pF
    • 2.4 pF
    • 250000 pF
    • 4 pF
    • 700000 pF
    • 9 pF
Additional Features
    • AVAILABLE IN BOTH POLARITIES
    • EUROPEAN PART NUMBER
    • HIGH RELIABILITY
    • HIGH RELIABILITY, HIGH VOLTAGE, LOW LEAKAGE CURRENT
    • HIGH RELIABILITY, LOW DISTORTION
    • HIGH VOLTAGE
    • LOW DISTORTION
    • LOW DISTORTION, METALLURGICALLY BONDED
    • LOW HARMONIC DISTORTION
    • LOW LEAKAGE
    • LOW LEAKAGE, LOW DISTORTION
    • PD-CASE
    • TR, 7 INCH: 3000
    • TTL COMPATIBLE
Nominal Minority Carrier Lifetime
    • .0001 us
    • .004 us
    • .005 us
    • .007 us
    • .01 us
    • .02 us
    • .025 us
    • .026 us
    • .03 us
    • .035 us
    • .036 us
    • .04 us
    • .045 us
    • .05 us
    • .07 us
    • .075 us
    • .08 us
    • .09 us
    • .1 us
    • .11 us
    • .12 us
    • .125 us
    • .15 us
    • .17 us
    • .18 us
    • .2 us
    • .25 us
    • .26 us
    • .27 us
    • .28 us
    • .3 us
    • .31 us
    • .32 us
    • .35 us
    • .4 us
    • .48 us
    • .5 us
    • .55 us
    • .6 us
    • .65 us
    • .7 us
    • .75 us
    • .8 us
    • .9 us
    • 1 us
    • 1.05 us
    • 1.1 us
    • 1.17 us
    • 1.175 us
    • 1.25 us
    • 1.3 us
    • 1.5 us
    • 1.55 us
    • 1.6 us
    • 1.8 us
    • 10 us
    • 19 us
    • 2 us
    • 2.5 us
    • 2.8 us
    • 20 us
    • 25 us
    • 3 us
    • 3.5 us
    • 30 us
    • 4 us
    • 5 us
    • 50 us
    • 500 us
    • 6 us
    • 6.5 us
    • 8 us
JEDEC-95 Code
    • DO-214AC
    • DO-34
    • TO-236AB
    • TO-92
Minimum Breakdown Voltage
    • 100 V
    • 1000 V
    • 120 V
    • 15 V
    • 150 V
    • 175 V
    • 180 V
    • 20 V
    • 200 V
    • 25 V
    • 250 V
    • 30 V
    • 300 V
    • 35 V
    • 400 V
    • 45 V
    • 50 V
    • 500 V
    • 60 V
    • 600 V
    • 65 V
    • 70 V
    • 75 V
    • 80 V
Maximum Non Repetitive Peak Forward Current
    • 2 A
    • 2.5 A
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • 5
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 220
    • 225
    • 235
    • 240
    • 245
    • 260
    • 265
    • NOT SPECIFIED
Diode Element Material
    • GALLIUM ARSENIDE
    • SILICON
Diode Resistive Test Frequency
    • 1 MHz
    • 100 MHz
    • 1000 MHz
    • 10000 MHz
    • 120 MHz
    • 1500 MHz
    • 200 MHz
    • 2200 MHz
    • 500 MHz
Reference Standard
    • AEC-Q101
    • ESA-SCC-5513/017
    • ESA-SCC-5513/030
    • IEC-60134
    • IEC-61000-4-2; 4-5
    • MIL-19500
Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Diode Resistive Test Current Config Frequency Band Maximum Forward Voltage (VF) Maximum Diode Capacitance Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Application Minimum Operating Temperature Terminal Finish JESD-30 Code Maximum Diode Forward Resistance Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features Nominal Minority Carrier Lifetime JEDEC-95 Code Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Diode Resistive Test Frequency Reference Standard

BAR61E6327

Infineon Technologies

PIN DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

.01 mA

COMPLEX

HIGH FREQUENCY

.5 pF

POSITIVE-INTRINSIC-NEGATIVE

3

0 V

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

MATTE TIN

R-PDSO-G4

4200 ohm

1

ANODE AND CATHODE

Not Qualified

.25 W

.2 pF

1 us

100 V

e3

260

SILICON

100 MHz

BAR64-02EL

Infineon Technologies

PIN DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

MEDIUM FREQUENCY TO C BAND

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

1

CHIP CARRIER

125 Cel

ATTENUATOR; SWITCHING

-55 Cel

GOLD

R-XBCC-N2

1.35 ohm

1

.25 W

LOW DISTORTION

1.55 us

150 V

e4

SILICON

BAR6406E6327XT

Infineon Technologies

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

MEDIUM FREQUENCY TO C BAND

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

125 Cel

ATTENUATOR; SWITCHING

-55 Cel

R-PDSO-G3

1.35 ohm

.25 W

LOW DISTORTION

1.55 us

150 V

SILICON

AEC-Q101

BAR64-07E6327

Infineon Technologies

PIN DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

1 mA

SEPARATE, 2 ELEMENTS

S BAND

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

2

0 V

SMALL OUTLINE

PIN Diodes

125 Cel

ATTENUATOR; SWITCHING

MATTE TIN

R-PDSO-G4

20 ohm

1

CATHODE

Not Qualified

.25 W

.17 pF

HIGH VOLTAGE

1.55 us

200 V

e3

260

SILICON

100 MHz

BAR64-04

Infineon Technologies

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

MEDIUM FREQUENCY TO C BAND

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

2

20 V

SMALL OUTLINE

PIN Diodes

125 Cel

ATTENUATOR; SWITCHING

-55 Cel

TIN

R-PDSO-G3

1.35 ohm

1

Not Qualified

.25 W

.35 pF

LOW DISTORTION

1.55 us

150 V

e3

SILICON

AEC-Q101

BAR6306WE6327HTSA1

Infineon Technologies

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

S BAND

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

150 Cel

SWITCHING

R-PDSO-G3

2 ohm

.25 W

.075 us

50 V

SILICON

BAR6406WH6327XTSA1

Infineon Technologies

PIN DIODE

POSITIVE-INTRINSIC-NEGATIVE

TIN

1

e3

SILICON

BAR65-07E6433

Infineon Technologies

PIN DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.9 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

SWITCHING

R-PDSO-G4

.95 ohm

CATHODE

Not Qualified

30 V

SILICON

BAR63-07

Infineon Technologies

PIN DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SEPARATE, 2 ELEMENTS

.25 pF

POSITIVE-INTRINSIC-NEGATIVE

2

5 V

SMALL OUTLINE

PIN Diodes

SWITCHING

R-PDSO-G4

1 ohm

Not Qualified

.25 pF

35 V

SILICON

BAR6302WH6327XTSA1

Infineon Technologies

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

S BAND

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

150 Cel

SWITCHING

R-PDSO-F2

2 ohm

.25 W

.075 us

50 V

SILICON

BAR65-07

Infineon Technologies

PIN DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

5 mA

SEPARATE, 2 ELEMENTS

.9 pF

POSITIVE-INTRINSIC-NEGATIVE

2

1 V

SMALL OUTLINE

PIN Diodes

125 Cel

SWITCHING

TIN LEAD

R-PDSO-G4

.9 ohm

CATHODE

Not Qualified

.25 W

.6 pF

.08 us

30 V

e0

SILICON

BAR6302WH6433TR

Infineon Technologies

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

S BAND

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

150 Cel

SWITCHING

R-PDSO-F2

2 ohm

.25 W

.075 us

50 V

SILICON

BAR67-02V-H6327

Infineon Technologies

PIN DIODE

YES

5 V

PIN Diodes

125 Cel

1

.35 pF

.7 us

150 V

260

BAR64-02LRH-E6433

Infineon Technologies

PIN DIODE

YES

1 mA

0 V

PIN Diodes

125 Cel

20 ohm

1

.13 pF

1.55 us

150 V

260

100 MHz

BAR64-07E6433

Infineon Technologies

PIN DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

1 mA

SEPARATE, 2 ELEMENTS

S BAND

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

2

0 V

SMALL OUTLINE

PIN Diodes

125 Cel

ATTENUATOR; SWITCHING

Matte Tin (Sn)

R-PDSO-G4

20 ohm

CATHODE

Not Qualified

.25 W

.17 pF

HIGH VOLTAGE

1.55 us

200 V

e3

SILICON

100 MHz

BAR6704E6327HTSA1

Infineon Technologies

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

L BAND

.9 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

150 Cel

ATTENUATOR; SWITCHING

R-PDSO-G3

1.8 ohm

.25 W

.7 us

150 V

SILICON

BAR6702VH6327XTSA1

Infineon Technologies

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

L BAND

.9 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

150 Cel

ATTENUATOR; SWITCHING

TIN

R-PDSO-F2

1.8 ohm

1

.25 W

.7 us

150 V

e3

SILICON

BAR63-03

Infineon Technologies

PIN DIODE

YES

10 mA

30 V

PIN Diodes

1 ohm

.06 pF

150 V

BAR6402LRHE6327XTSA1

Infineon Technologies

PIN DIODE

BAR65-07F

Infineon Technologies

PIN DIODE

DUAL

FLAT

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.9 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

SWITCHING

R-PDSO-F4

.9 ohm

1

Not Qualified

.25 W

.08 us

30 V

SILICON

BAR64-02W

Infineon Technologies

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

MEDIUM FREQUENCY TO S BAND

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

1

20 V

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

TIN LEAD

R-PDSO-F2

1.35 ohm

Not Qualified

.25 W

.35 pF

HIGH VOLTAGE

1.55 us

150 V

e0

SILICON

BAR65-02V-E6433

Infineon Technologies

PIN DIODE

YES

5 mA

0 V

PIN Diodes

125 Cel

.95 ohm

.5 pF

.08 us

100 MHz

BAR64-03W

Infineon Technologies

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

20 mA

SINGLE

MEDIUM FREQUENCY TO C BAND

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

1

20 V

SMALL OUTLINE

PIN Diodes

125 Cel

ATTENUATOR; SWITCHING

-55 Cel

TIN

R-PDSO-G2

1.35 ohm

1

Not Qualified

.25 W

.35 pF

LOW DISTORTION

1.55 us

150 V

e3

SILICON

AEC-Q101

BAR66

Infineon Technologies

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

5 mA

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

ULTRA HIGH FREQUENCY

.9 pF

2

100 V

SMALL OUTLINE

PIN Diodes

150 Cel

-55 Cel

R-PDSO-G3

1.8 ohm

1

Not Qualified

.25 W

.35 pF

TR, 7 INCH: 3000

.7 us

150 V

SILICON

100 MHz

IEC-61000-4-2; 4-5

BAR65-03W

Infineon Technologies

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

.9 pF

POSITIVE-INTRINSIC-NEGATIVE

1

3 V

SMALL OUTLINE

PIN Diodes

125 Cel

SWITCHING

-55 Cel

TIN

R-PDSO-G2

.9 ohm

1

Not Qualified

.25 W

.6 pF

.08 us

30 V

e3

SILICON

100 MHz

BAR63-04

Infineon Technologies

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

S BAND

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

2

5 V

SMALL OUTLINE

PIN Diodes

150 Cel

SWITCHING

TIN

R-PDSO-G3

2 ohm

1

Not Qualified

.25 W

.25 pF

.075 us

50 V

e3

SILICON

BAR6305WE6327HTSA1

Infineon Technologies

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

S BAND

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

150 Cel

SWITCHING

R-PDSO-G3

2 ohm

.25 W

.075 us

50 V

SILICON

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.