NO LEAD Transient Suppression Devices 1,724

Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

PESD3V3S1UL,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

5.6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

TIN

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

20 V

5.2 V

e3

30

260

SILICON

6 V

SP3304NUTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

SQUARE

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1 uA

1

3.3 V

SMALL OUTLINE

3.3 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

S-PDSO-N10

1

UNIDIRECTIONAL

LOW CAPACITANCE

MO-229

11.5 V

e4

10

260

SILICON

IEC-61000-4-2, 4-4, 4-5

ESDA7P120-1U1M

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1400 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

R-PBCC-N2

1

UNIDIRECTIONAL

6.4 V

SILICON

IEC-61000-4-2

PESD9X7.0L,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

7 V

150 Cel

MATTE TIN

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

18 V

7.5 V

e3

30

260

SILICON

D3V3F4U10LP-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

6.2 V

AVALANCHE

1 uA

4

3.3 V

SMALL OUTLINE

3.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N10

UNIDIRECTIONAL

ANODE

.35 W

PD-NOM,ULTRA LOW CAPACITANCE

3.5 V

5.5 V

260

SILICON

IEC-61000-4-2, IEC-61000-4-5

ESDALC5-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

28 W

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

5.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC61000-4-2

PESD5V0C1BSFYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

TIN

R-PBCC-N2

1

BIDIRECTIONAL

IEC-61643-321

6 V

e3

30

260

SILICON

IEC-60134; IEC-61000-4-2, 4-5

XGD10402KR

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.001 uA

1

24 V

SMALL OUTLINE

Transient Suppressors

24 V

125 Cel

-65 Cel

TIN OVER NICKEL

R-PDSO-N2

BIDIRECTIONAL

40 V

e3

30

260

SILICON

IEC61000-4-2

UCLAMP0501P.TCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

200 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

12.5 V

6 V

e4

260

SILICON

IEC-61000-4-2, 4-4

TPD1E04U04DPLT

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

16 W

6.2 V

AVALANCHE

.01 uA

1

SMALL OUTLINE

3.6 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PSSO-N2

1

UNIDIRECTIONAL

5.3 V

4.5 V

e4

NOT SPECIFIED

260

SILICON

7.5 V

IEC-61000-4-2, 4-4, 4-5

PUSB3AB4Z

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

AVALANCHE

5

SMALL OUTLINE

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD SILVER

R-PDSO-N10

1

UNIDIRECTIONAL

5.5 V

e4

30

260

SILICON

IEC-60134; IEC-61000-4-2; IEC-61000-4-5

RCLAMP3521P.TNT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

50 W

6.7 V

AVALANCHE

.05 uA

1

3.5 V

CHIP CARRIER

3.5 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

13 V

4.5 V

e4

30

260

SILICON

8.5 V

IEC-61000-4-2, 4-4

SP2555NUTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1000 W

AVALANCHE

1

SMALL OUTLINE

2.5 V

125 Cel

-40 Cel

MATTE TIN

R-PDSO-N10

UNIDIRECTIONAL

LOW CAPACITANCE

MO-229

e3

40

260

SILICON

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

ESD0P8RFLE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

50 V

150 Cel

-55 Cel

GOLD

R-XBCC-N4

1

UNIDIRECTIONAL

12 V

e4

SILICON

15 V

ESD5111FCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

5 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

MATTE TIN

R-XBCC-N2

1

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

6.5 V

3.68 V

e3

30

260

SILICON

6.5 V

IEC-61000-4-2

PESD5V0X1ULD,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5.5 V

150 Cel

TIN

R-PDSO-N2

1

UNIDIRECTIONAL

Not Qualified

5.8 V

e3

30

260

SILICON

10 V

VBUS05L1-DD1-G-08

Vishay Intertechnology

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

34 W

8.4 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

5.5 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PDSO-N2

BIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

17 V

7 V

e4

SILICON

9.5 V

ESDA8P30-1T2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

7.3 V

AVALANCHE

.3 uA

2

6.3 V

CHIP CARRIER

6.3 V

150 Cel

-55 Cel

R-PBCC-N2

1

UNIDIRECTIONAL

12 V

6.9 V

SILICON

7.8 V

IEC61000-4-2

ESDU3121MXT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

15 V

AVALANCHE

.1 uA

1

12 V

CHIP CARRIER

12 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY

22 V

14.1 V

e4

30

260

SILICON

15.8 V

IEC-61000-4-2, 4-5

PESD3V3L5UF,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

25 W

5.6 V

AVALANCHE

.3 uA

5

3.3 V

BOTTOM

Transient Suppressors

3.3 V

150 Cel

-65 Cel

TIN

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

MO-252

12 V

5.3 V

e3

30

260

SILICON

5.9 V

AEC-Q101

SP3205-01ETG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5.5 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

R-PBCC-N2

1

UNIDIRECTIONAL

LOW CAPACITANCE

12 V

3.6 V

40

260

SILICON

AEC-Q101, IEC-61000-4-2, 4-4, 4-5

ESD206B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

6 V

e4

SILICON

10 V

PESD5V0H1BSFYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

1

BIDIRECTIONAL

IEC-61643-321

6 V

30

260

SILICON

IEC-60134; IEC-61000-4-2, 4-5

PTVS4V5D1BLYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.05 uA

1

4.5 V

CHIP CARRIER

4.5 V

150 Cel

-55 Cel

R-PBCC-N2

1

BIDIRECTIONAL

13.2 V

4.7 V

30

260

SILICON

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

TPD2E007YFMRG4

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

4

YES

SQUARE

UNSPECIFIED

SINGLE

14 V

AVALANCHE

.05 uA

4

CHIP CARRIER

Transient Suppressors

13 V

85 Cel

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

S-XBCC-N4

1

BIDIRECTIONAL

Not Qualified

.27 W

14 V

14 V

e1

NOT SPECIFIED

260

SILICON

IEC-61000-4-2, 4-5

824012823

Wurth Elektronik

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1.1 V

AVALANCHE

.5 uA

1

3.3 V

SMALL OUTLINE

3.3 V

85 Cel

-55 Cel

R-PDSO-N6

UNIDIRECTIONAL

4.5 V

30

260

SILICON

IEC-61000-4-2, 4-4, 4-5

DT1240-04LP-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

60 W

AVALANCHE

1

SMALL OUTLINE

5.5 V

85 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N10

1

UNIDIRECTIONAL

.35 W

6 V

e4

30

260

SILICON

IEC-61000-4-5

ESD206B102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

6 V

e4

SILICON

10 V

ESD241B1W0201E6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

25 W

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

SILICON

IEC-61000-4-2, 4-4, 4-5

PESD5V0L1ULD,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

42 W

6.8 V

AVALANCHE

.1 uA

1

5 V

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-55 Cel

TIN

R-PDSO-N2

1

UNIDIRECTIONAL

Not Qualified

25 pF

LOW CAPACITANCE

12 V

6.4 V

e3

30

260

SILICON

7.2 V

AEC-Q101

RCLAMP2504P.TCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

SINGLE

80 W

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

2.5 V

NICKEL PALLADIUM GOLD

S-PDSO-N6

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT, LOW CAPACITANCE

13 V

e4

260

SILICON

RCLAMP3304P.TCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

SINGLE

80 W

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

3.3 V

NICKEL PALLADIUM GOLD

S-PDSO-N6

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT, LOW CAPACITANCE

16 V

e4

260

SILICON

TPD6E001RSFR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

12

YES

SQUARE

PLASTIC/EPOXY

SINGLE

AVALANCHE

.001 uA

1

FLATPACK

Transient Suppressors

5.5 V

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

S-PQFP-N12

1

UNIDIRECTIONAL

Not Qualified

MO-220WGGB

25 V

11 V

e4

30

260

SILICON

ESD119B1W01005E6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

35 W

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD202B1CSP01005XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

36 W

8 V

AVALANCHE

.1 uA

1

5.5 V

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

17 V

6 V

SILICON

10 V

IEC-61000-4-2, 4-4, 4-5

ESD207B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

3.65 V

e4

SILICON

ESDL2011PFCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1.65 V

AVALANCHE

.5 uA

1

1 V

SMALL OUTLINE

1 V

150 Cel

-55 Cel

R-PDSO-N2

1

BIDIRECTIONAL

.313 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

6 V

1.4 V

30

260

SILICON

2.3 V

IEC-61000-4-2, 4-5

TPD1E6B06DPLR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

NO LEAD

YES

RECTANGULAR

PLASTIC/EPOXY

6 V

AVALANCHE

.1 uA

Transient Suppressors

5 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PSSO-N2

1

BIDIRECTIONAL

10 V

e4

30

260

SILICON

UCLAMP0506P.TCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 6 ELEMENTS

100 W

AVALANCHE

6

SMALL OUTLINE

Transient Suppressors

5 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

S-PDSO-N6

1

UNIDIRECTIONAL

ANODE

Not Qualified

LOW LEAKAGE CURRENT, LOW CAPACITANCE

12 V

6 V

e4

260

SILICON

D1213A-01LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

HIGH RELIABILITY

6 V

e4

30

260

SILICON

AEC-Q101

UCLAMP0508T.TCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

8

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N8

1

UNIDIRECTIONAL

Not Qualified

12.5 V

e4

260

SILICON

CPDQC5V0HE-HF

Comchip Technology

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

128 W

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

5.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-5

PESD5V0V1BL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

45 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

TIN

R-PBCC-N2

1

BIDIRECTIONAL

Not Qualified

5.8 V

e3

SILICON

7.8 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

UCLAMP0501T.TCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

SINGLE

6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-CBCC-N2

1

UNIDIRECTIONAL

Not Qualified

12.5 V

e4

260

SILICON

ESDA6V1-5M6

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

100 W

6.65 V

AVALANCHE

5

SMALL OUTLINE

Transient Suppressors

125 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N6

1

UNIDIRECTIONAL

Not Qualified

6.1 V

e4

30

260

SILICON

7.2 V

PESD3V3V1BLYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.01 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

R-PBCC-N2

1

BIDIRECTIONAL

10 V

4.5 V

30

260

SILICON

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD5V0H1BSF,315

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

1

BIDIRECTIONAL

IEC-61643-321

6 V

30

260

SILICON

IEC-60134; IEC-61000-4-2, 4-5

PESD5V0S1USF,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

35 W

7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

IEC-61643-321

9 V

6 V

SILICON

8 V

IEC-60134; IEC-61000-4-2, 4-5

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.