NO LEAD Transient Suppression Devices 1,724

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

41206ESDA-TR1

Eaton Corporation

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

8

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 4 ELEMENTS

AVALANCHE

.1 uA

4

12 V

SMALL OUTLINE

12 V

105 Cel

-40 Cel

R-PDSO-N8

BIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

60 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

42510ESDA-TR1

Eaton Corporation

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

AVALANCHE

4

SMALL OUTLINE

12 V

125 Cel

-55 Cel

R-PDSO-N10

BIDIRECTIONAL

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

ACPDQC5V0R-HF

Comchip Technology

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

154 W

AVALANCHE

1

SMALL OUTLINE

5 V

150 Cel

-40 Cel

Gold (Au)

R-PDSO-N2

BIDIRECTIONAL

5.6 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

9.4 V

AEC-Q101

AXGD10603MR

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

32 V

125 Cel

-65 Cel

R-PDSO-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

40 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q200

CPDUC5V0R-HF

Comchip Technology

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

154 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-40 Cel

MATTE TIN

R-PBCC-N2

BIDIRECTIONAL

5.6 V

e3

SILICON

9.4 V

IEC-61000-4-2

D1V8L1BS2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

175 W

AVALANCHE

1 uA

1

1.8 V

CHIP CARRIER

1.8 V

150 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

BIDIRECTIONAL

.25 W

7 V

2.1 V

e3

SILICON

IEC-61000-4-2, 4-5; MIL-STD-202

D20V0L1B2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

68 W

AVALANCHE

1

CHIP CARRIER

20 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

21 V

e3

30

260

SILICON

25 V

IEC-61000-4-2

D5V0X1B2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

7 V

e3

260

SILICON

DESD3V3E1BL-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

35 W

AVALANCHE

1

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

3.8 V

e4

30

260

SILICON

6.5 V

IEC-61000-4-2

ESD208B102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

125 Cel

-55 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

11 V

e4

SILICON

8.1 V

ESD208B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

125 Cel

-55 Cel

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

11 V

SILICON

8.1 V

ESD239B1W0201E6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

80 W

AVALANCHE

1

CHIP CARRIER

22 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD242B1W01005E6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

25 W

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD246B1W01005E6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

44 W

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD3V3U1U-02LRH

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

MATTE TIN

R-XBCC-N2

UNIDIRECTIONAL

Not Qualified

12 V

5 V

e3

SILICON

ESD8351MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

.5 uA

1

3.3 V

CHIP CARRIER

Transient Suppressors

3.3 V

125 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

11.2 V

5.5 V

e4

30

260

SILICON

7.8 V

IEC-61000-4-2

ESDAULC6-1U2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

18 W

AVALANCHE

1

CHIP CARRIER

3 V

150 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

e4

30

260

SILICON

ESDSLC5V0LB-TP-HF

Micro Commercial Components

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

80 W

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

e3

SILICON

9 V

IEC-61000-4-2, 4-4, 4-5

IP4283CZ10-TBR,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

ZENER

1

SMALL OUTLINE

Transient Suppressors

85 Cel

-40 Cel

MATTE TIN

R-PDSO-N10

1

UNIDIRECTIONAL

8 V

6 V

e3

30

260

SILICON

9 V

IEC-60134

LXES1UBAB1-007

Murata Manufacturing

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

18 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

17.5 V

85 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

18 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

PESD24VF1BL-QYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

28 V

AVALANCHE

.03 uA

1

24 V

CHIP CARRIER

24 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

.23 pF

17 V

24.5 V

SILICON

31.5 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD3V3L5UK,132

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

28 W

5.6 V

AVALANCHE

5

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

S-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

9.5 V

5.3 V

30

260

SILICON

5.9 V

PESD5V0L5UK,132

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

30 W

6.8 V

AVALANCHE

5

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

S-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

9.9 V

6.47 V

30

260

SILICON

7.14 V

PESD5V0U1UL,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

TIN

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

5.8 V

e3

30

260

SILICON

8.8 V

PTVS22VU1UPAZ

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

3600 W

25.6 V

AVALANCHE

.05 uA

1

22 V

SMALL OUTLINE

22 V

150 Cel

-55 Cel

S-PDSO-N3

1

UNIDIRECTIONAL

CATHODE

IEC-61643-321

41 V

24.4 V

30

260

SILICON

26.9 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PUSB3TB6AZ

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

7

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

85 Cel

-40 Cel

R-PDSO-N7

1

UNIDIRECTIONAL

6 V

30

260

SILICON

IEC-60134; IEC-61000-4-2; IEC-61000-4-5

SP3530-01ETG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

8.2 V

AVALANCHE

1 uA

1

5 V

CHIP CARRIER

7 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

LOW CAPACITANCE

11.8 V

e4

40

260

SILICON

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

SPHV15-01ETG-C

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

200 W

16.7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

15 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

MO-236

30 V

16.7 V

e4

30

260

SILICON

AEC-Q101

SPHV24-01ETG-C

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

200 W

26.7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

24 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

MO-236

50 V

26.7 V

e4

30

260

SILICON

AEC-Q101

STN254050UL50H

Eaton Corporation

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

100 W

7.25 V

AVALANCHE

.5 uA

1

5 V

SMALL OUTLINE

5 V

125 Cel

-55 Cel

R-PDSO-N10

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

15 V

6 V

SILICON

8.5 V

IEC-61000-4-2, 4-5

VESD05A1B-HD1-GS08

Vishay Intertechnology

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

33 W

6.8 V

AVALANCHE

.1 uA

1

5 V

SMALL OUTLINE

Transient Suppressors

5 V

125 Cel

-40 Cel

MATTE TIN

R-PDSO-N2

1

UNIDIRECTIONAL

Not Qualified

ASYMMETRICAL

11 V

6 V

e3

SILICON

7.5 V

IEC-61000-4-2, 4-5

CDDFN6-0504P

Bourns

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

AVALANCHE

1

SMALL OUTLINE

5 V

MATTE TIN

R-PDSO-N6

2

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

6 V

e3

SILICON

D12V0L1B2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

100 W

AVALANCHE

1

CHIP CARRIER

12 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

13 V

e4

30

260

SILICON

AEC-Q101; IEC-61000-4-5

D5V0F2U3LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N3

1

UNIDIRECTIONAL

ANODE

.3 W

6 V

e4

260

SILICON

D5V0L1B2LP4-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

84 W

7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

14 V

6 V

e3

30

260

SILICON

8 V

IEC-61000-4-5

D5V0P1B2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

6 V

e4

260

SILICON

8 V

DT1240A-04LP-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

52 W

AVALANCHE

1

SMALL OUTLINE

3.3 V

85 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N10

UNIDIRECTIONAL

.35 W

8 V

e4

260

SILICON

IEC-61000-4-2, 4-5

ESD5V3U4UHDMIE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

9

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

AVALANCHE

4

CHIP CARRIER

5.3 V

125 Cel

-40 Cel

GOLD

R-PBCC-N9

1

UNIDIRECTIONAL

ANODE

6 V

e4

SILICON

ESD7008MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

18

YES

RECTANGULAR

UNSPECIFIED

COMPLEX

6.7 V

AVALANCHE

8

SMALL OUTLINE

Transient Suppressors

5 V

125 Cel

-55 Cel

MATTE TIN

R-XDSO-N18

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

10 V

5.5 V

e3

30

260

SILICON

ESD7331MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

7.5 V

4 V

e4

30

260

SILICON

IEC-61000-4-2

ESD7410N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1 uA

1

8 V

CHIP CARRIER

8 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

19.4 V

10 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD7461N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

16.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

16 V

150 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

39 V

16.5 V

30

260

SILICON

IEC-61000-4-2, 4-4, 4-5

HSP061-8M16

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

16

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

150 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N16

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

14 V

6 V

e4

30

260

SILICON

IP4221CZ6-S,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

ZENER

1

CHIP CARRIER

Transient Suppressors

TIN

R-PBCC-N6

UNIDIRECTIONAL

Not Qualified

ULTRA LOW CAPACITANCE

6 V

e3

30

260

SILICON

9 V

JANS1N6134US

Microchip Technology

TRANS VOLTAGE SUPPRESSOR DIODE

END

NO LEAD

2

YES

ROUND

UNSPECIFIED

SINGLE

500 W

150 V

ZENER

1

LONG FORM

Transient Suppressors

114 V

TIN LEAD

O-XELF-N2

1

UNIDIRECTIONAL

ISOLATED

Qualified

1.5 W

206.3 V

135 V

e0

SILICON

MIL-19500/516

LXESEABAA6-046

Murata Manufacturing

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5.5 V

85 Cel

-40 Cel

R-PDSO-N10

UNIDIRECTIONAL

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

PESD24VF1BSFYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

24 V

125 Cel

-45 Cel

R-PBCC-N2

BIDIRECTIONAL

IEC-61643-321

24.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-60134; IEC-61000-4-2, 4-5

PESD3V3U1UL,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5.6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

TIN

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

4.5 V

e3

30

260

SILICON

6.8 V

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.