NO LEAD Transient Suppression Devices 1,724

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

TPD3E001DRS

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

150 Cel

R-PDSO-N6

UNIDIRECTIONAL

Not Qualified

SILICON

TPD4E1B06DRLT

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

45 W

AVALANCHE

4

SMALL OUTLINE

5.5 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N6

1

BIDIRECTIONAL

.95 V

7 V

e4

30

260

SILICON

9.5 V

IEC-61000-4-2, 4-4, 4-5

TPD4E004DSFR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

150 Cel

R-PDSO-N6

UNIDIRECTIONAL

Not Qualified

6 V

SILICON

8 V

TPD6E05U06RVZ

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

14

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

35 W

AVALANCHE

1

SMALL OUTLINE

5.5 V

85 Cel

-40 Cel

R-PDSO-N14

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

SILICON

8.5 V

IEC-61000-4-2; IEC-61000-4-5

TPD4E001DPKT

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

SINGLE

100 W

AVALANCHE

.001 uA

1

SMALL OUTLINE

Transient Suppressors

5.5 V

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

S-PDSO-N6

1

UNIDIRECTIONAL

25 V

11 V

e4

30

260

SILICON

IEC-61000-4-2, 4-5

PESD341DPLR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

54 W

6.2 V

AVALANCHE

.1 uA

1

3.6 V

CHIP CARRIER

3.6 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

10 V

4.7 V

SILICON

7.7 V

IEC-61000-4-2,4-5

ESD341DPLR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

54 W

6.2 V

AVALANCHE

.1 uA

1

3.6 V

CHIP CARRIER

3.6 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

10 V

5 V

e4

260

SILICON

7.2 V

IEC-61000-4-2,4-5

PESD761DPYRQ1

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

65 W

30.5 V

AVALANCHE

.05 uA

1

24 V

CHIP CARRIER

24 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

31 V

25.5 V

SILICON

35.5 V

AEC-Q101; IEC-61000-4-2, 4-5

ESD761DPYR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

65 W

30.5 V

AVALANCHE

.05 uA

1

24 V

CHIP CARRIER

24 V

150 Cel

-50 Cel

NICKEL PALLADIUM GOLD SILVER

R-PBCC-N2

1

BIDIRECTIONAL

36.3 V

25.5 V

e4

260

SILICON

35.5 V

IEC-61000-4-2,4-5

ESD761DPYRQ1

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

65 W

30.5 V

AVALANCHE

.05 uA

1

24 V

CHIP CARRIER

24 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD SILVER

R-PBCC-N2

1

BIDIRECTIONAL

36.3 V

25.5 V

e4

260

SILICON

35.5 V

AEC-Q101; IEC-61000-4-2, 4-5

PESD451DPLR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

50 W

8 V

AVALANCHE

.05 uA

1

5.5 V

CHIP CARRIER

5.5 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

10.4 V

7 V

SILICON

9 V

IEC-61000-4-2, 4-5

PESD441DPLR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

23 W

7 V

AVALANCHE

.05 uA

1

5.5 V

CHIP CARRIER

5.5 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

7.6 V

6 V

SILICON

8 V

IEC-61000-4-2, 4-5

MAX13204EALT+

Analog Devices

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

UNSPECIFIED

COMPLEX

SCHOTTKY

8

SMALL OUTLINE

Transient Suppressors

150 Cel

GOLD NICKEL

R-XDSO-N6

1

UNIDIRECTIONAL

Not Qualified

.358 W

LOW CAPACITANCE

125 V

e4

30

260

SILICON

MAX3203EETT+

Analog Devices

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

6

SMALL OUTLINE

Other Diodes

150 Cel

-40 Cel

Matte Tin (Sn) - annealed

S-PDSO-N6

1

UNIDIRECTIONAL

Not Qualified

1.951 W

MO-229WEEA

e3

30

260

SILICON

MAX3205EATE+

Analog Devices

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

16

YES

SQUARE

UNSPECIFIED

SINGLE

.95 V

AVALANCHE

1

CHIP CARRIER

Other Diodes

150 Cel

-40 Cel

Matte Tin (Sn) - annealed

S-XQCC-N16

1

UNIDIRECTIONAL

Not Qualified

1.667 W

LOW CAPACITANCE

e3

30

260

SILICON

MAX3208EATE+

Analog Devices

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

16

YES

SQUARE

UNSPECIFIED

SINGLE

.95 V

AVALANCHE

1

CHIP CARRIER

Other Diodes

150 Cel

-40 Cel

Matte Tin (Sn) - annealed

S-XQCC-N16

1

UNIDIRECTIONAL

Not Qualified

1.667 W

LOW CAPACITANCE

e3

30

260

SILICON

MAX3206EETC+T

Analog Devices

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

12

YES

SQUARE

UNSPECIFIED

COMPLEX

.95 V

AVALANCHE

12

CHIP CARRIER

Other Diodes

150 Cel

-40 Cel

Matte Tin (Sn) - annealed

S-XQCC-N12

1

UNIDIRECTIONAL

Not Qualified

1.35 W

MO-220WGGB

e3

30

260

SILICON

MAX13206EALA+

Analog Devices

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

UNSPECIFIED

COMPLEX

SCHOTTKY

12

SMALL OUTLINE

Transient Suppressors

150 Cel

GOLD NICKEL

R-PDSO-N6

1

UNIDIRECTIONAL

Not Qualified

.381 W

LOW CAPACITANCE

125 V

e4

30

260

SILICON

MAX3204EETT+

Analog Devices

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

8

SMALL OUTLINE

Other Diodes

150 Cel

-40 Cel

Matte Tin (Sn) - annealed

S-PDSO-N6

1

UNIDIRECTIONAL

Not Qualified

1.951 W

MO-229WEEA

e3

30

260

SILICON

MAX3202EETT+

Analog Devices

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

4

SMALL OUTLINE

Other Diodes

150 Cel

-40 Cel

Matte Tin (Sn) - annealed

S-PDSO-N6

1

UNIDIRECTIONAL

Not Qualified

1.951 W

MO-229WEEA

e3

30

260

SILICON

MAX3205EATE+T

Analog Devices

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

16

YES

SQUARE

UNSPECIFIED

SINGLE

.95 V

AVALANCHE

1

FLATPACK

Other Diodes

150 Cel

-40 Cel

Matte Tin (Sn) - annealed

S-XQFP-N16

1

UNIDIRECTIONAL

Not Qualified

1.667 W

LOW CAPACITANCE

e3

30

260

SILICON

MAX3206EETC+

Analog Devices

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

12

YES

SQUARE

UNSPECIFIED

COMPLEX

.95 V

AVALANCHE

12

CHIP CARRIER

Other Diodes

150 Cel

-40 Cel

Matte Tin (Sn) - annealed

S-XQCC-N12

1

UNIDIRECTIONAL

Not Qualified

1.35 W

MO-220WGGB

e3

30

260

SILICON

MAX13208EALB+

Analog Devices

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

UNSPECIFIED

COMPLEX

SCHOTTKY

16

SMALL OUTLINE

Transient Suppressors

150 Cel

GOLD NICKEL

R-XDSO-N6

1

UNIDIRECTIONAL

Not Qualified

.403 W

LOW CAPACITANCE

125 V

e4

30

260

SILICON

MAX3203EETT+T

Analog Devices

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

6

SMALL OUTLINE

Other Diodes

150 Cel

-40 Cel

Matte Tin (Sn) - annealed

S-PDSO-N6

1

UNIDIRECTIONAL

Not Qualified

1.95 W

MO-229WEEA

e3

30

260

SILICON

MAX3202EETT+T

Analog Devices

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

4

SMALL OUTLINE

Other Diodes

150 Cel

-40 Cel

Matte Tin (Sn) - annealed

S-PDSO-N6

1

UNIDIRECTIONAL

Not Qualified

1.95 W

MO-229WEEA

e3

30

260

SILICON

NSP5501V10MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.5 uA

1

10 V

CHIP CARRIER

10 V

150 Cel

-65 Cel

R-PBCC-N2

UNIDIRECTIONAL

20 V

12 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-5

NSPM8151MUTBG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

17.5 V

AVALANCHE

1 uA

1

15 V

SMALL OUTLINE

15 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-N6

1

UNIDIRECTIONAL

27 V

16 V

e3

30

260

SILICON

18.5 V

IEC-61000-4-2; IEC-61000-4-5

NSPU3061N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.9 V

AVALANCHE

1 uA

1

6.3 V

CHIP CARRIER

6.3 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

110 pF

EXCELLENT CLAMPING CAPABILITY

9.7 V

6.4 V

e4

30

260

SILICON

9.5 V

IEC-61000-4-2, 4-5

TRA2532

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

END

NO LEAD

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

AVALANCHE

1

DISK BUTTON

Transient Suppressors

23 V

TIN

O-CEDB-N2

UNIDIRECTIONAL

Not Qualified

24 V

e3

260

SILICON

32 V

NSPM6201MUTBG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

AVALANCHE

1 uA

1

20 V

SMALL OUTLINE

20 V

150 Cel

-65 Cel

S-PDSO-N3

BIDIRECTIONAL

39 V

21 V

SILICON

27 V

IEC-61000-4-2, 4-5

HVL2021RP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

UPPER

NO LEAD

1

YES

SQUARE

UNSPECIFIED

SINGLE

ZENER

.5 uA

1

14 V

UNCASED CHIP

150 Cel

-40 Cel

S-XUUC-N1

BIDIRECTIONAL

22 V

SILICON

AEC-Q101

NSPM0101MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.5 uA

1

10 V

CHIP CARRIER

10 V

150 Cel

-65 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

20 V

12 V

30

260

SILICON

IEC-61000-4-2, 4-5

TVS8501V5MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-65 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

11.5 V

6 V

30

260

SILICON

9 V

IEC-61000-4-2, 4-5

NSP8818MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 8 ELEMENTS

1.1 V

3.5 V

AVALANCHE

.5 uA

8

3 V

SMALL OUTLINE

3 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N10

1

UNIDIRECTIONAL

LOW CAPACITANCE

15 V

3.2 V

e4

30

260

SILICON

5 V

IEC-61000-4-2, 4-5

NSPM2051MUT3G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.05 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-65 Cel

R-PBCC-N2

1

UNIDIRECTIONAL

10.5 V

5.1 V

260

SILICON

7 V

IEC-61000-4-2, 4-5

NSPU3062N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.9 V

AVALANCHE

1 uA

1

6.3 V

CHIP CARRIER

6.3 V

150 Cel

-65 Cel

R-PBCC-N2

UNIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY

8.7 V

6.4 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9.5 V

IEC-61000-4-2, 4-5

ESDM1031MX4T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5.2 V

AVALANCHE

.5 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

TIN COPPER SILVER

R-PBCC-N2

1

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

9.6 V

4.6 V

30

260

SILICON

6.3 V

IEC-61000-4-2, 4-5

ESDM1051MX4T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.8 V

AVALANCHE

.1 uA

1

5.5 V

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

10 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

MR3227P

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

END

NO LEAD

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

23.5 V

AVALANCHE

1

DISK BUTTON

Transient Suppressors

18 V

O-CEDB-N2

UNIDIRECTIONAL

Not Qualified

20 V

SILICON

27 V

TVS8818MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 8 ELEMENTS

AVALANCHE

8

SMALL OUTLINE

3 V

125 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PDSO-N10

1

UNIDIRECTIONAL

LOW CAPACITANCE

3.2 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

5 V

IEC-61000-4-2, 4-5

NCP362AMUTBG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

UNSPECIFIED

AVALANCHE

SMALL OUTLINE

5 V

150 Cel

MATTE TIN

R-XDSO-N10

UNIDIRECTIONAL

Not Qualified

5.4 V

e3

SILICON

NSPU3071N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

8.4 V

AVALANCHE

1 uA

1

7.9 V

CHIP CARRIER

7.9 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY

9.6 V

7.95 V

e4

30

260

SILICON

8.8 V

IEC-61000-4-2, 4-5

MR4027P

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

END

NO LEAD

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

23.5 V

AVALANCHE

1

DISK BUTTON

Transient Suppressors

18 V

O-CEDB-N2

UNIDIRECTIONAL

Not Qualified

20 V

SILICON

27 V

FESD05P30ZL

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

50 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

TIN

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

PRSM-NOM

6.2 V

e3

30

260

SILICON

IEC-61000-4-5

NSPU5201MUTBG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

22.7 V

AVALANCHE

1 uA

1

20 V

SMALL OUTLINE

20 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-N6

1

UNIDIRECTIONAL

ANODE

31.5 V

21.7 V

e3

30

260

SILICON

23.7 V

IEC-61000-4-2

ESDM3033N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.05 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

8.2 V

5.1 V

SILICON

7 V

IEC61000-4-2

NSPM2052MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-65 Cel

R-PBCC-N3

UNIDIRECTIONAL

CATHODE

9 V

5.1 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

7 V

IEC-61000-4-2, 4-5

ESDM2033MX4T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

6.5 V

3.68 V

e3

30

260

SILICON

6.5 V

IEC-61000-4-2

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.