NO LEAD Transient Suppression Devices 1,724

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

SZESD1014MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

SQUARE

PLASTIC/EPOXY

SINGLE

450 W

5.3 V

AVALANCHE

5 uA

1

3.3 V

SMALL OUTLINE

3.3 V

125 Cel

-40 Cel

MATTE TIN

S-PDSO-N10

1

UNIDIRECTIONAL

LOW CAPACITANCE

11 V

5 V

e3

30

260

SILICON

AEC-Q101, IEC-61000-4-2

ESD8111FCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.9 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

8 V

5.5 V

e3

30

260

SILICON

8.6 V

IEC-61000-4-2

ESD8024MNTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

24

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 24 ELEMENTS

1.1 V

7 V

AVALANCHE

.5 uA

24

2.5 V

CHIP CARRIER

2.5 V

125 Cel

-55 Cel

MATTE TIN

S-PQCC-N24

1

UNIDIRECTIONAL

ANODE

ULTRA LOW CAPACITANCE

8 V

5.5 V

e3

30

260

SILICON

9 V

IEC-61000-4-2, 4-5

ESD8101PFCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.9 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

.4 pF

ULTRA LOW CAPACITANCE

8 V

5.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

8.6 V

IEC-61000-4-2

ESD8451N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.9 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

125 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

LOW CAPACITANCE

16 V

5.5 V

30

260

SILICON

8.3 V

IEC-61000-4-2

SZNSP8814MTWTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

8

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

1.1 V

3.5 V

AVALANCHE

.5 uA

4

3 V

SMALL OUTLINE

3 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-N8

1

UNIDIRECTIONAL

LOW CAPACITANCE

15 V

3.2 V

e3

30

260

SILICON

5 V

AEC-Q101; IEC-61000-4-2, 4-5; ISO 10605

ESD7241N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

24 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

24.3 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

28 V

IEC-61000-4-2, 4-4, 4-5

ESD7421N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

10.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

16 V

150 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

38.1 V

10.5 V

30

260

SILICON

14 V

IEC-61000-4-2

SZNSP8818MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 8 ELEMENTS

1.1 V

3.5 V

AVALANCHE

.5 uA

8

3 V

SMALL OUTLINE

3 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N10

1

UNIDIRECTIONAL

LOW CAPACITANCE

15 V

3.2 V

260

SILICON

5 V

AEC-Q101; IEC-61000-4-2, 4-5

ESD8501V5MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-65 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

11.5 V

6 V

30

260

SILICON

9 V

IEC-61000-4-2, 4-5

CM1248-08DE

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

8

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 8 ELEMENTS

AVALANCHE

8

SMALL OUTLINE

Transient Suppressors

5.5 V

TIN

R-PDSO-N8

1

UNIDIRECTIONAL

Not Qualified

MO-229C

6.8 V

e3

30

260

SILICON

SZESD8704MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

5 V

AVALANCHE

1 uA

4

3.3 V

SMALL OUTLINE

3.3 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-N10

1

UNIDIRECTIONAL

LOW CAPACITANCE, ULTRA LOW CAPACITANCE

6.6 V

e3

30

260

SILICON

6 V

AEC-Q101; IEC-61000-4-2

SESDM1131MX4T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

7 V

4 V

SILICON

6 V

IEC-61000-4-2

ESD8016MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

8

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 6 ELEMENTS

7 V

AVALANCHE

1 uA

6

3.3 V

SMALL OUTLINE

3.3 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N8

1

UNIDIRECTIONAL

8.4 V

5.5 V

e4

30

260

SILICON

IEC-61000-4-2

ESD7501MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

11.5 V

5.5 V

e4

30

260

SILICON

IEC-61000-4-2, 4-5

CM1241-04D4

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

8

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

TIN

R-PDSO-N8

1

UNIDIRECTIONAL

Not Qualified

MO-229C

9.6 V

14.6 V

e3

30

260

SILICON

17.7 V

SZESD7451N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE

13 V

5 V

30

260

SILICON

7.5 V

AEC-Q101; IEC-61000-4-2, 4-5

CM1250-04QF

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

5.5 V

R-PDSO-N6

UNIDIRECTIONAL

6.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD5371MXT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

3.5 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

7.5 V

IEC-61000-4-2, 4-5

ESD11B5.0ST5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

5.8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

125 Cel

-40 Cel

R-XBCC-N2

3

BIDIRECTIONAL

Not Qualified

.25 W

LOW CAPACITANCE

5.8 V

260

SILICON

SZESD7571N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.3 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY

7 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101; IEC-61000-4-2, 4-5

ESD5101PFCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

6.5 V

3.68 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

6.5 V

IEC-61000-4-2

SZESD8551MXWT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.9 V

AVALANCHE

.5 uA

1

3.3 V

SMALL OUTLINE

3.3 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N2

1

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

16 V

5.5 V

e4

30

260

SILICON

8.3 V

AEC-Q101; IEC-61000-4-2

ESD8904MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

5.1 V

AVALANCHE

1 uA

4

3.3 V

SMALL OUTLINE

3.3 V

125 Cel

-55 Cel

R-PDSO-N10

UNIDIRECTIONAL

.3 pF

ULTRA LOW CAPACITANCE

9.5 V

4.7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

6.2 V

IEC-61000-4-2, 4-5

NUP4105MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

SQUARE

PLASTIC/EPOXY

SINGLE

5.3 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

3.3 V

125 Cel

-40 Cel

TIN

S-PDSO-N10

UNIDIRECTIONAL

Not Qualified

14 V

5 V

e3

260

SILICON

CM1242-33CP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

7.6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

R-XBCC-N2

BIDIRECTIONAL

Not Qualified

8.6 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9 V

CM1233-08DE

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

16

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

TIN

R-PDSO-N16

1

BIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

MO-229C

10 V

e3

260

SILICON

6 V

ESD7181MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

18.5 V

125 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

41.1 V

20.5 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

35 V

IEC-61000-4-2, 4-5

CM1225-04DE

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ZENER

1

SMALL OUTLINE

Transient Suppressors

TIN

R-PDSO-N10

1

UNIDIRECTIONAL

Not Qualified

MO-229C

10 V

e3

30

260

SILICON

SZESD8704MTWTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

5 V

AVALANCHE

1 uA

4

3.3 V

SMALL OUTLINE

3.3 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-N10

1

UNIDIRECTIONAL

LOW CAPACITANCE, ULTRA LOW CAPACITANCE

6.6 V

e3

30

260

SILICON

6 V

AEC-Q101; IEC-61000-4-2

ESD7561N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

16 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

39 V

16.5 V

e4

30

260

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD5381MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.1 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

UNIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

10.5 V

6.1 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4

SZESD8451MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.9 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

LOW CAPACITANCE

19 V

5.5 V

e4

30

260

SILICON

8.3 V

AEC-Q101; IEC-61000-4-2

ESD10201MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.2 uA

1

21 V

CHIP CARRIER

21 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE

40.4 V

21.2 V

e4

30

260

SILICON

IEC-61000-4-2, 4-5

SZNUP2124MXWTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

120 W

27 V

ZENER

.1 uA

2

24 V

SMALL OUTLINE

24 V

175 Cel

-55 Cel

S-PDSO-N3

BIDIRECTIONAL

40 V

26 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

33 V

AEC-Q101, IEC-61000-4-2, 4-4, 4-5

SZESD8351MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

.5 uA

1

3.3 V

CHIP CARRIER

Transient Suppressors

3.3 V

125 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

11.2 V

5.5 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

7.8 V

AEC-Q101

SZESD7410MXWT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1 uA

1

8 V

SMALL OUTLINE

8 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N2

1

BIDIRECTIONAL

.3 W

19.4 V

10 V

e4

30

260

SILICON

AEC-Q101; IEC-61000-4-2; ISO 10605

ESD8004MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

7 V

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

3.3 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-N10

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

8 V

5.5 V

e3

30

260

SILICON

IEC-61000-4-2

ESD7321MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.2 uA

1

7 V

CHIP CARRIER

7 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

18 V

8 V

e4

30

260

SILICON

IEC-61000-4-2

SZESD7241MXWT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

25 V

AVALANCHE

.5 uA

1

24 V

SMALL OUTLINE

24 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N2

1

BIDIRECTIONAL

.3 W

ULTRA LOW CAPACITANCE

48 V

24.3 V

e4

30

260

SILICON

28 V

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

ESD7424MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

24 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

.3 W

27 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD8504GMUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

4.5 V

AVALANCHE

1 uA

4

3 V

SMALL OUTLINE

3 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-N10

1

UNIDIRECTIONAL

LOW CAPACITANCE

8.5 V

4 V

e3

30

260

SILICON

6 V

IEC-61000-4-2

ESD8551N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

5.5 V

e4

30

260

SILICON

8.3 V

IEC-61000-4-2

SZESD7421N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

10.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

16 V

150 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

38.1 V

10.5 V

30

260

SILICON

14 V

AEC-Q101; IEC-61000-4-2

ESD7410MXWT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1 uA

1

8 V

SMALL OUTLINE

8 V

150 Cel

-55 Cel

R-PDSO-N2

BIDIRECTIONAL

.3 W

19.4 V

10 V

SILICON

IEC-61000-4-2; ISO 10605

ESD8111PFCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.9 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

8 V

5.5 V

e3

30

260

SILICON

8.6 V

IEC-61000-4-2

SZESD8451N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.9 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

125 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

LOW CAPACITANCE

16 V

5.5 V

30

260

SILICON

8.3 V

AEC-Q101; IEC-61000-4-2

ESD7382MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1 uA

1

5 V

CHIP CARRIER

5 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

.55 pF

EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE

10 V

5.2 V

e4

30

260

SILICON

IEC-61000-4-2, 4-5

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.