NO LEAD Transient Suppression Devices 1,724

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

HBL1010RP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

UPPER

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

8 V

AVALANCHE

100 uA

1

7 V

UNCASED CHIP

130 Cel

-40 Cel

R-XUUC-N2

BIDIRECTIONAL

7.3 V

SILICON

8.9 V

NSPU5132MUTBG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4800 W

15.5 V

AVALANCHE

.5 uA

1

13.5 V

SMALL OUTLINE

13.5 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-N6

1

UNIDIRECTIONAL

ANODE

24 V

13.6 V

e3

30

260

SILICON

17.5 V

IEC-61000-4-2, 4-5

NUP8011MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

8

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 8 ELEMENTS

6.8 V

AVALANCHE

8

SMALL OUTLINE

Transient Suppressors

150 Cel

MATTE TIN

R-PDSO-N8

1

UNIDIRECTIONAL

Not Qualified

6.47 V

e3

30

260

SILICON

7.14 V

NSPU2131MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

15.5 V

AVALANCHE

.5 uA

1

13.5 V

CHIP CARRIER

13.5 V

150 Cel

-65 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

23 V

13.6 V

30

260

SILICON

17.5 V

IEC-61000-4-2,4-5

ESDM1131MX4T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

TIN COPPER SILVER

R-PBCC-N2

1

BIDIRECTIONAL

7 V

4 V

30

260

SILICON

6 V

IEC-61000-4-2

ESDM1121MX4T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

14 V

AVALANCHE

.5 uA

1

12 V

CHIP CARRIER

12 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-5

MG2040MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

18

YES

RECTANGULAR

UNSPECIFIED

COMPLEX

5.5 V

AVALANCHE

14

SMALL OUTLINE

Transient Suppressors

5 V

125 Cel

-55 Cel

MATTE TIN

R-XDSO-N18

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

10 V

5.5 V

e3

30

260

SILICON

IEC-61000-4-2

NSPM5131MUTBG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

15.5 V

AVALANCHE

1 uA

1

13.5 V

SMALL OUTLINE

13.5 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-N6

1

UNIDIRECTIONAL

21.5 V

13.6 V

e3

30

260

SILICON

17.5 V

IEC-61000-4-2, 4-5

NUP8010MNT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

8

YES

SQUARE

PLASTIC/EPOXY

SEPARATE, 8 ELEMENTS

20 W

5.6 V

AVALANCHE

8

SMALL OUTLINE

Transient Suppressors

3 V

TIN

S-PDSO-N8

UNIDIRECTIONAL

Not Qualified

13 V

5.3 V

e3

260

SILICON

5.9 V

TVS5501V10MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.5 uA

1

10 V

CHIP CARRIER

10 V

150 Cel

-65 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

20 V

12 V

30

260

SILICON

IEC-61000-4-2, 4-5

NZ8DH9V1MXWT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

10 V

ZENER

.5 uA

1

6 V

SMALL OUTLINE

6 V

175 Cel

-55 Cel

R-PDSO-N2

BIDIRECTIONAL

.3 W

10.9 V

9.3 V

SILICON

10.7 V

IEC-61000-4-2

MR3227N

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

END

NO LEAD

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

23.5 V

AVALANCHE

1

DISK BUTTON

Transient Suppressors

18 V

O-CEDB-N2

UNIDIRECTIONAL

Not Qualified

20 V

SILICON

27 V

NSPU2101MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

12 V

AVALANCHE

.1 uA

1

10 V

CHIP CARRIER

10 V

150 Cel

-65 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

18.1 V

11.4 V

30

260

SILICON

12.6 V

IEC-61000-4-2, 4-5

SNSPM2051MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.05 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-65 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

11 V

5.1 V

30

260

SILICON

7 V

IEC-61000-4-2, 4-5

TRA2532G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

END

NO LEAD

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

AVALANCHE

1

DISK BUTTON

175 Cel

-65 Cel

O-CEDB-N2

UNIDIRECTIONAL

Not Qualified

24 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

32 V

HBL1010BRP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

UNSPECIFIED

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

COMMON ANODE, 2 ELEMENTS

8 V

ZENER

100 uA

2

7 V

UNCASED CHIP

130 Cel

-40 Cel

R-XUUC-N2

UNIDIRECTIONAL

7.3 V

SILICON

8.9 V

HBL1060BRP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

UPPER

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

1.5 V

60 V

AVALANCHE

100 uA

1

54 V

UNCASED CHIP

130 Cel

-40 Cel

R-XUUC-N2

UNIDIRECTIONAL

55 V

SILICON

65 V

HBL2020RP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

UPPER

NO LEAD

1

YES

SQUARE

UNSPECIFIED

SINGLE

AVALANCHE

.5 uA

1

UNCASED CHIP

150 Cel

-40 Cel

S-XUUC-N1

BIDIRECTIONAL

22 V

SILICON

ESDM2021MX4T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4.5 V

AVALANCHE

.1 uA

1

2 V

CHIP CARRIER

2 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

.313 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

6.4 V

3.7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

5.7 V

IEC-61000-4-2

ESDL3552PFCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 3 ELEMENTS

10.2 V

AVALANCHE

.05 uA

3

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

MATTE TIN

R-PBCC-N3

1

UNIDIRECTIONAL

ISOLATED

.3 W

EXCELLENT CLAMPING CAPABILITY

18 V

6.5 V

e3

30

260

SILICON

11.5 V

IEC-61000-4-2, 4-5

ESDM3032MXT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4.9 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

8.5 V

4.1 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

5.7 V

IEC-61000-4-2, 4-5

NCP362BMUTBG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

UNSPECIFIED

AVALANCHE

SMALL OUTLINE

5 V

150 Cel

MATTE TIN

R-XDSO-N10

UNIDIRECTIONAL

Not Qualified

5.4 V

e3

SILICON

CM1641-04D4

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

8

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

TIN

R-PDSO-N8

1

UNIDIRECTIONAL

Not Qualified

MO-229C

9.6 V

14.6 V

e3

30

260

SILICON

17.7 V

ESDM3051MXT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.05 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

8.2 V

5.1 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

7 V

IEC-61000-4-2, 4-5

HVL1060BRP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

UPPER

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

1.5 V

60 V

AVALANCHE

100 uA

1

54 V

UNCASED CHIP

130 Cel

-40 Cel

R-XUUC-N2

UNIDIRECTIONAL

55 V

SILICON

65 V

AEC-Q101

CM1621-06DE

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

12

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

TIN

R-PDSO-N12

1

UNIDIRECTIONAL

Not Qualified

MO-229C

e3

30

260

SILICON

ESDL2031MX4T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

72 W

6.8 V

AVALANCHE

.05 uA

1

4 V

CHIP CARRIER

4 V

125 Cel

-55 Cel

R-PBCC-N2

1

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

7.4 V

5.1 V

30

260

SILICON

8.5 V

IEC-61000-4-2, 4-4, 4-5

NUP6012PMUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 6 ELEMENTS

AVALANCHE

6

SMALL OUTLINE

4 V

MATTE TIN

S-PDSO-N6

UNIDIRECTIONAL

ANODE

Not Qualified

5.2 V

e3

SILICON

ESDL4151PFCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

17.5 V

AVALANCHE

1 uA

1

15 V

CHIP CARRIER

15 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

24.5 V

15.5 V

SILICON

19.5 V

IEC-61000-4-2, 4-5

NSPM3042MXT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5 V

AVALANCHE

.5 uA

1

4.8 V

CHIP CARRIER

4.8 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY

8 V

4.55 V

e4

30

260

SILICON

6 V

IEC-61000-4-2, 4-5

NSP8814MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

8

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

1.1 V

3.5 V

AVALANCHE

.5 uA

4

3 V

SMALL OUTLINE

3 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N8

1

UNIDIRECTIONAL

LOW CAPACITANCE

15 V

3.2 V

e4

30

260

SILICON

5 V

IEC-61000-4-2, 4-5

NSPU5221MUTBG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

25 V

AVALANCHE

2 uA

1

22 V

SMALL OUTLINE

22 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-N6

1

UNIDIRECTIONAL

ANODE

35 V

24 V

e3

30

260

SILICON

26 V

IEC-61000-4-2

HBL2050WP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

UPPER

NO LEAD

1

YES

SQUARE

UNSPECIFIED

SINGLE

AVALANCHE

.5 uA

1

45 V

UNCASED CHIP

125 Cel

-40 Cel

S-XUUC-N1

UNIDIRECTIONAL

47 V

SILICON

CM1623-04DE

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

8

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

AVALANCHE

7

SMALL OUTLINE

TIN

R-PDSO-N8

1

UNIDIRECTIONAL

Not Qualified

.5 W

MO-229C

e3

30

260

SILICON

NSPM1042MUTBG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4.7 V

AVALANCHE

.1 uA

1

4.8 V

CHIP CARRIER

4.8 V

150 Cel

-65 Cel

R-PBCC-N2

BIDIRECTIONAL

9.5 V

4.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

5.5 V

IEC-61000-4-2, 4-5

HBL1009MRP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

UPPER

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

COMMON ANODE, 2 ELEMENTS

8 V

AVALANCHE

100 uA

2

7 V

UNCASED CHIP

130 Cel

-40 Cel

R-XUUC-N2

UNIDIRECTIONAL

7.3 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

8.9 V

NCP362CMUTBG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

UNSPECIFIED

AVALANCHE

SMALL OUTLINE

5 V

150 Cel

TIN

R-XDSO-N10

1

UNIDIRECTIONAL

Not Qualified

5.4 V

e3

30

260

SILICON

ESDM1031

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5.2 V

AVALANCHE

.5 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

9 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

NSP8501V5MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-65 Cel

R-PBCC-N2

UNIDIRECTIONAL

11.5 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9 V

IEC-61000-4-2, 4-5

NSPM8181MUTBG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

22.5 V

AVALANCHE

1 uA

1

SMALL OUTLINE

18 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-N6

1

UNIDIRECTIONAL

30 V

20 V

e3

30

260

SILICON

23.5 V

IEC-61000-4-2; IEC-61000-4-5

CM1771-5006YL

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

UPPER

NO LEAD

1

YES

RECTANGULAR

UNSPECIFIED

COMMON ANODE, 2 ELEMENTS

100 V

AVALANCHE

2

UNCASED CHIP

Transient Suppressors

R-XUUC-N1

UNIDIRECTIONAL

ANODE

Not Qualified

90 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

110 V

NSPM3041MXT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.1 V

AVALANCHE

.1 uA

1

4.5 V

CHIP CARRIER

4.5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY

8.5 V

5.3 V

e4

30

260

SILICON

7.5 V

IEC-61000-4-2, 4-5

NZL5V6AUA3

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

COMMON ANODE, 2 ELEMENTS

ZENER

2

CHIP CARRIER

R-CBCC-N3

1

UNIDIRECTIONAL

ANODE

Not Qualified

5.3 V

260

SILICON

5.9 V

NSPM2051MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.05 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-65 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

10.5 V

5.1 V

30

260

SILICON

7 V

IEC-61000-4-2, 4-5

NUP8028MNT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

8

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 8 ELEMENTS

20 W

5.6 V

AVALANCHE

8

SMALL OUTLINE

Transient Suppressors

3 V

TIN

R-PDSO-N8

UNIDIRECTIONAL

Not Qualified

13 V

5.3 V

e3

260

SILICON

5.9 V

HBL1009RP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

UPPER

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

COMMON ANODE, 2 ELEMENTS

8 V

AVALANCHE

100 uA

2

7 V

UNCASED CHIP

130 Cel

-40 Cel

R-XUUC-N2

UNIDIRECTIONAL

7.3 V

SILICON

8.9 V

ESDM1051

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.8 V

AVALANCHE

.1 uA

1

5.5 V

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

10 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

TVS8814MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

8

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

AVALANCHE

4

SMALL OUTLINE

3 V

125 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PDSO-N8

1

UNIDIRECTIONAL

LOW CAPACITANCE

3.2 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

5 V

IEC-61000-4-2, 4-5

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.