NO LEAD Transient Suppression Devices 1,724

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

ESD5581MXT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.2 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY

12 V

5.2 V

e4

30

260

SILICON

7.5 V

IEC-61000-4-2

ESD8101FCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.9 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

5.5 V

SILICON

8.6 V

IEC-61000-4-2

SZESD7462MXWT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

22 V

AVALANCHE

.1 uA

1

5 V

SMALL OUTLINE

16 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N2

1

BIDIRECTIONAL

.3 W

ULTRA LOW CAPACITANCE

47 V

16.5 V

e4

30

260

SILICON

28 V

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

CM1242-07CP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

7.6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

R-XBCC-N2

BIDIRECTIONAL

Not Qualified

9.8 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9 V

SZESDM9902

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

AVALANCHE

.2 uA

2

25 V

SMALL OUTLINE

35 V

150 Cel

-55 Cel

R-PDSO-N6

BIDIRECTIONAL

ISO 10605

28 V

SILICON

AEC-Q101; IEC-61000-4-2, 4-4, 4-5; ISO 7637-2, -3

ESD8116MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

8

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 6 ELEMENTS

5 V

AVALANCHE

1 uA

6

3.3 V

SMALL OUTLINE

3.3 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N8

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

11.4 V

4 V

e4

30

260

SILICON

IEC-61000-4-2

ESD7471N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.3 V

150 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY

15 V

7 V

30

260

SILICON

IEC-61000-4-2, 4-5

ESD8472BMUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

9.5 V

AVALANCHE

.01 uA

1

5.3 V

CHIP CARRIER

5.3 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE, ULTRA LOW CAPACITANCE

20 V

7 V

SILICON

12 V

IEC-61000-4-2, 4-5

SZESD7104MTWTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

AVALANCHE

1 uA

5

5 V

SMALL OUTLINE

5 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-N10

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

19.5 V

5.5 V

e3

30

260

SILICON

AEC-Q101, IEC-61000-4-2

SZESD9901MX2WT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.2 uA

1

25 V

SMALL OUTLINE

25 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N2

1

BIDIRECTIONAL

30

260

SILICON

AEC-Q101, IEC-61000-4-2, 4-5

ESD8118MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 8 ELEMENTS

5 V

AVALANCHE

1 uA

8

3.3 V

SMALL OUTLINE

3.3 V

125 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PDSO-N10

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

11.4 V

4 V

30

260

SILICON

IEC-61000-4-2

ESD8708MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

11

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 8 ELEMENTS

5 V

AVALANCHE

8

SMALL OUTLINE

3.3 V

125 Cel

-55 Cel

Matte Tin (Sn) - annealed

R-PDSO-N11

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6.8 V

4 V

e3

30

260

SILICON

6 V

IEC-61000-4-2, 4-5

SZESD7424MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

24 V

150 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

27 V

30

260

SILICON

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

ESD5101AFCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

6.5 V

5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

6.5 V

IEC-61000-4-2

NUP4012PMUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

5.5 V

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

4 V

125 Cel

-40 Cel

TIN

S-PDSO-N6

1

UNIDIRECTIONAL

ANODE

Not Qualified

5.2 V

e3

30

260

SILICON

ESD7462N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

16 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

16.5 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

28 V

IEC-61000-4-2, 4-4, 4-5

ESD8106MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

14

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 6 ELEMENTS

5 V

AVALANCHE

1 uA

6

3.3 V

SMALL OUTLINE

3.3 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-N14

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

4 V

e3

30

260

SILICON

IEC-61000-4-2

SZESD1014MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

SQUARE

PLASTIC/EPOXY

SINGLE

450 W

5.3 V

AVALANCHE

5 uA

1

3.3 V

SMALL OUTLINE

3.3 V

125 Cel

-40 Cel

MATTE TIN

S-PDSO-N10

1

UNIDIRECTIONAL

LOW CAPACITANCE

11 V

5 V

e3

30

260

SILICON

AEC-Q101, IEC-61000-4-2

ESDU401-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

40 W

44 V

AVALANCHE

.05 uA

1

40 V

CHIP CARRIER

40 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

50 V

41 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

46 V

IEC61000-4-2

ESDZV5-1BV2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

45 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

ESDZV5H-1BU2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

40 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

ESDV5-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

5.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

8.5 V

IEC-61000-4-2

ESDX051-2BU3

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 3 ELEMENTS

15 W

6.8 V

AVALANCHE

.1 uA

3

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N3

BIDIRECTIONAL

LOW CAPACITANCE

15 V

6 V

SILICON

10 V

IEC-61000-4-2

ESDL20-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

90 W

AVALANCHE

1

CHIP CARRIER

20 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

22 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

25 V

IEC-61000-4-2

SATAULC6-2M6

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.2 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

125 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N6

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

19 V

6 V

e4

SILICON

DPIULC6-6DJL

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

18

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

AVALANCHE

3

SMALL OUTLINE

Transient Suppressors

125 Cel

-40 Cel

MATTE TIN

R-PDSO-N18

3

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

17 V

6 V

e3

30

260

SILICON

ESDZL5-1F4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

60 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

EMIF06-1005N12

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

12

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

125 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N12

1

UNIDIRECTIONAL

HIGH RELIABILITY

6 V

e4

30

260

SILICON

10 V

ESDL031-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

45 W

5.5 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

7 V

5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

6.6 V

IEC61000-4-2

SMX1J7.5A-TR

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

85 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

7.5 V

150 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

Not Qualified

14 V

8.3 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESDZV5-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

70 W

AVALANCHE

.1 uA

1

5.5 V

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

ESDALC5-1BT2Y

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

8 V

AVALANCHE

.06 uA

1

CHIP CARRIER

125 Cel

-50 Cel

R-PBCC-N2

1

BIDIRECTIONAL

12.5 V

5.8 V

SILICON

11 V

AEC-Q101; IEC-61000-4-2; ISO 7637-3; ISO 10605

ESDA5-1F4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

110 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

5.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

ESDALC20-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

90 W

23 V

AVALANCHE

.01 uA

1

20 V

CHIP CARRIER

20 V

150 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

37 V

22 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC61000-4-2

ESDAVLC6-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

8 V

AVALANCHE

.1 uA

1

3 V

CHIP CARRIER

3 V

85 Cel

-30 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

10 V

IEC61000-4-2

HSP053-4M5

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

5

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

5 V

150 Cel

-40 Cel

R-PDSO-N5

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

5.3 V

SILICON

IEC-61000-4-2

ESDAVLC6V1-1BM2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

125 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

3

BIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

6.1 V

e4

30

260

SILICON

ESDA24P140-1U3M

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4500 W

24 V

AVALANCHE

.2 uA

1

22 V

SMALL OUTLINE

22 V

150 Cel

-55 Cel

S-PDSO-N3

1

UNIDIRECTIONAL

CATHODE

38 V

22.7 V

SILICON

25.2 V

IEC-61000-4-2, 4-4

ESDAXLC18-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

50 W

AVALANCHE

1

CHIP CARRIER

18 V

150 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

ESDA6V1-5T6

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

35 W

6.65 V

AVALANCHE

5

CHIP CARRIER

Transient Suppressors

125 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

6.1 V

e4

30

260

SILICON

7.2 V

HSP061-4M10Y

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

3 V

150 Cel

-40 Cel

R-PDSO-N10

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101; IEC-61000-4-2

ESDAVLC8-1BU2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

17 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

125 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

8.5 V

e4

30

260

SILICON

HSP051-4N10

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

9

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5.8 V

AVALANCHE

.1 uA

1

3.6 V

CHIP CARRIER

150 Cel

-40 Cel

R-PBCC-N9

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

10 V

4.5 V

SILICON

IEC61000-4-2

ESDALC14V2-1U2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

15.6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

125 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

e4

30

260

SILICON

ESDAVLC8-1BT2Y

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

11 V

AVALANCHE

.05 uA

1

3 V

CHIP CARRIER

3 V

125 Cel

-50 Cel

R-PBCC-N2

1

BIDIRECTIONAL

HIGH RELIABILITY, LOW CAPACITANCE

8.5 V

SILICON

14 V

AEC-Q101, IEC-61000-4-2

ESDALC6V1-1BM2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

140 W

8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

125 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

3

BIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

6.1 V

e4

30

260

SILICON

8 V

USBULC1606-4M8

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

8

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

70 W

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

125 Cel

R-PDSO-N8

UNIDIRECTIONAL

Not Qualified

28 V

6.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9.2 V

HSP061-2M6

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.1 uA

1

3 V

SMALL OUTLINE

150 Cel

-40 Cel

R-PDSO-N6

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

SILICON

IEC-61000-4-2

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.