NO LEAD Transient Suppression Devices 1,724

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

NUP3115UPMUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

UNSPECIFIED

COMMON ANODE, 2 ELEMENTS

6.8 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

5.5 V

125 Cel

-40 Cel

MATTE TIN

S-XDSO-N6

1

UNIDIRECTIONAL

ANODE

Not Qualified

EXCELLENT CLAMPING CAPABILITY

22 V

6.4 V

e3

30

260

SILICON

8 V

SZESD8551N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

5.5 V

e4

30

260

SILICON

8.3 V

AEC-Q101; IEC-61000-4-2

CM1263-06DE

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

12

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

TIN

R-PDSO-N12

1

UNIDIRECTIONAL

Not Qualified

MO-229C

9.9 V

e3

260

SILICON

ESD5581MXT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.2 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY

12 V

5.2 V

e4

30

260

SILICON

7.5 V

IEC-61000-4-2

ESD8101FCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.9 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

5.5 V

SILICON

8.6 V

IEC-61000-4-2

SZESD7462MXWT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

22 V

AVALANCHE

.1 uA

1

5 V

SMALL OUTLINE

16 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N2

1

BIDIRECTIONAL

.3 W

ULTRA LOW CAPACITANCE

47 V

16.5 V

e4

30

260

SILICON

28 V

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

CM1242-07CP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

7.6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

R-XBCC-N2

BIDIRECTIONAL

Not Qualified

9.8 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9 V

NUP4212UPMUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 6 ELEMENTS

15 V

AVALANCHE

6

SMALL OUTLINE

Transient Suppressors

4 V

125 Cel

-40 Cel

TIN

S-PDSO-N6

1

UNIDIRECTIONAL

ANODE

Not Qualified

EXCELLENT CLAMPING CAPABILITY

5.2 V

e3

30

260

SILICON

SZESDL2012MX2WT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1.6 V

AVALANCHE

.5 uA

1

1 V

CHIP CARRIER

1 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

.313 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

7.5 V

1.4 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.1 V

AEC-Q101; IEC-61000-4-2, 4-5

ESD5004MXTBG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON BIPOLAR TERMINAL, 4 ELEMENTS

AVALANCHE

1 uA

4

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N5

1

BIDIRECTIONAL

5 pF

LOW CAPACITANCE

9.1 V

3.9 V

30

260

SILICON

IEC-61000-4-2

SZESD7481MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE

12 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101; IEC-61000-4-2, 4-5

SZESDM3551N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.3 V

AVALANCHE

.1 uA

1

5.5 V

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

8.2 V

5.6 V

e4

30

260

SILICON

7 V

AEC-Q101; IEC-61000-4-2, 4-5; ISO 10605

ESD8451MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.9 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

LOW CAPACITANCE

19 V

5.5 V

e4

30

260

SILICON

8.3 V

IEC-61000-4-2

SZNSP8814MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

8

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

1.1 V

3.5 V

AVALANCHE

.5 uA

4

3 V

SMALL OUTLINE

3 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N8

1

UNIDIRECTIONAL

LOW CAPACITANCE

15 V

3.2 V

260

SILICON

5 V

AEC-Q101; IEC-61000-4-2, 4-5

NUP3112UPMUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

5.5 V

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

4 V

125 Cel

-40 Cel

MATTE TIN

S-PDSO-N6

1

UNIDIRECTIONAL

ANODE

Not Qualified

5.2 V

e3

30

260

SILICON

ESD5102FCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

5 V

AVALANCHE

.1 uA

2

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

R-PBCC-N3

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

6.5 V

3.68 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

6.5 V

IEC-61000-4-2

ESD8018MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 8 ELEMENTS

7 V

AVALANCHE

1 uA

8

3.3 V

SMALL OUTLINE

3.3 V

125 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PDSO-N10

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

4.8 V

5.5 V

30

260

SILICON

IEC-61000-4-2, 4-5

ESD7382N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1 uA

1

5 V

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

.25 W

.55 pF

EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE

10 V

5.2 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

ESDU401-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

40 W

44 V

AVALANCHE

.05 uA

1

40 V

CHIP CARRIER

40 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

50 V

41 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

46 V

IEC61000-4-2

ESDZV5-1BV2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

45 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

ESDZV5H-1BU2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

40 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

ESDV5-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

5.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

8.5 V

IEC-61000-4-2

ESDX051-2BU3

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 3 ELEMENTS

15 W

6.8 V

AVALANCHE

.1 uA

3

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N3

BIDIRECTIONAL

LOW CAPACITANCE

15 V

6 V

SILICON

10 V

IEC-61000-4-2

ESDL20-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

90 W

AVALANCHE

1

CHIP CARRIER

20 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

22 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

25 V

IEC-61000-4-2

SATAULC6-2M6

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.2 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

125 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N6

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

19 V

6 V

e4

SILICON

DPIULC6-6DJL

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

18

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

AVALANCHE

3

SMALL OUTLINE

Transient Suppressors

125 Cel

-40 Cel

MATTE TIN

R-PDSO-N18

3

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

17 V

6 V

e3

30

260

SILICON

ESDZL5-1F4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

60 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

EMIF06-1005N12

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

12

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

125 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N12

1

UNIDIRECTIONAL

HIGH RELIABILITY

6 V

e4

30

260

SILICON

10 V

ESDL031-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

45 W

5.5 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

7 V

5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

6.6 V

IEC61000-4-2

SMX1J7.5A-TR

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

85 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

7.5 V

150 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

Not Qualified

14 V

8.3 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESDZV5-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

70 W

AVALANCHE

.1 uA

1

5.5 V

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

ESDALC5-1BT2Y

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

8 V

AVALANCHE

.06 uA

1

CHIP CARRIER

125 Cel

-50 Cel

R-PBCC-N2

1

BIDIRECTIONAL

12.5 V

5.8 V

SILICON

11 V

AEC-Q101; IEC-61000-4-2; ISO 7637-3; ISO 10605

ESDA5-1F4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

110 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

5.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

ESDALC20-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

90 W

23 V

AVALANCHE

.01 uA

1

20 V

CHIP CARRIER

20 V

150 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

37 V

22 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC61000-4-2

ESDAVLC6-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

8 V

AVALANCHE

.1 uA

1

3 V

CHIP CARRIER

3 V

85 Cel

-30 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

10 V

IEC61000-4-2

HSP053-4M5

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

5

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

5 V

150 Cel

-40 Cel

R-PDSO-N5

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

5.3 V

SILICON

IEC-61000-4-2

ESDA17P50-1U1M

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1200 W

16.4 V

AVALANCHE

.05 uA

2

15 V

CHIP CARRIER

15 V

150 Cel

-55 Cel

R-PBCC-N2

1

UNIDIRECTIONAL

26.5 V

15.6 V

SILICON

IEC61000-4-2

ESDA8P80-1U1M

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1100 W

AVALANCHE

1

CHIP CARRIER

6.3 V

150 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

6.9 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

ESDAVLC5-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20 W

7.15 V

AVALANCHE

.1 uA

1

5.3 V

CHIP CARRIER

5.3 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

11.7 V

5.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

8.5 V

IEC61000-4-2

ESDAXLC6-1BU2K

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

AVALANCHE

.07 uA

1

3 V

CHIP CARRIER

150 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

19 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC61000-4-2

ESDAVLC6V1-1BT2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

6.1 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

125 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

3

BIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

6.1 V

e4

30

260

SILICON

ESDA17P20-1F2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

16.7 V

AVALANCHE

.08 uA

1

15 V

CHIP CARRIER

15 V

150 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

23 V

15.6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

17.9 V

IEC-61000-4-2

ESDA17P100-1U2M

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4800 W

AVALANCHE

1

SMALL OUTLINE

15 V

150 Cel

-55 Cel

R-PDSO-N6

1

UNIDIRECTIONAL

ANODE

15.7 V

SILICON

17.7 V

IEC-61000-4-2

ESDA5-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

110 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

5.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

ESDALC6V1M3

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

30 W

6.65 V

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N3

3

UNIDIRECTIONAL

CATHODE

Not Qualified

LOW LEAKAGE CURRENT

MO-236AA

6.1 V

e4

30

260

SILICON

7.2 V

ESDAXLC5-1U2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20 W

6.6 V

AVALANCHE

.1 uA

1

3.6 V

CHIP CARRIER

3.6 V

150 Cel

-55 Cel

R-PBCC-N2

1

UNIDIRECTIONAL

10.4 V

5 V

SILICON

IEC-61000-4-2,4-5

ESDARF02-1BU2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

AVALANCHE

.07 uA

1

3 V

CHIP CARRIER

3 V

150 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

30 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC61000-4-2

ESDA22P150-1U3M

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

4500 W

22 V

AVALANCHE

.25 uA

1

20 V

SMALL OUTLINE

20 V

150 Cel

-55 Cel

S-PDSO-N3

1

UNIDIRECTIONAL

CATHODE

34 V

21 V

SILICON

23.5 V

IEC61000-4-2

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.