NO LEAD Transient Suppression Devices 1,724

Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

HBL21000RP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

UPPER

NO LEAD

2

YES

SQUARE

UNSPECIFIED

SINGLE

AVALANCHE

.5 uA

1

14 V

UNCASED CHIP

150 Cel

-40 Cel

S-XUUC-N1

BIDIRECTIONAL

22 V

SILICON

MR4045P

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

END

NO LEAD

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

39.5 V

AVALANCHE

1

DISK BUTTON

Transient Suppressors

30 V

O-CEDB-N2

UNIDIRECTIONAL

Not Qualified

34 V

SILICON

45 V

NIV1241MTWTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

25 V

AVALANCHE

.5 uA

2

24 V

SMALL OUTLINE

23.5 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-N6

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

43 V

24 V

e3

30

260

SILICON

28 V

AEC-Q101, IEC-61000-4-2

ESDM2032MX4T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5.2 V

AVALANCHE

.5 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

.313 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

8.2 V

3.7 V

e3

30

260

SILICON

6.7 V

IEC-61000-4-2, 4-5

ESDM3551MXT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.3 V

AVALANCHE

.1 uA

1

5.5 V

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

8.2 V

5.6 V

e4

30

260

SILICON

7 V

IEC-61000-4-2, 4-5; ISO 10605

TVS8151MUTBG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ZENER

1

SMALL OUTLINE

15 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-N6

1

UNIDIRECTIONAL

16 V

e3

30

260

SILICON

18.5 V

IEC-61000-4-2, 4-5

ESDL1531

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.05 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

5.5 V

SILICON

8.6 V

IEC-61000-4-2

TVS8181MUTBG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ZENER

1

SMALL OUTLINE

18 V

125 Cel

-55 Cel

Tin (Sn)

R-PDSO-N6

1

UNIDIRECTIONAL

20 V

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

23.5 V

IEC-61000-4-2, 4-5

MR4027N

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

END

NO LEAD

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

23.5 V

AVALANCHE

1

DISK BUTTON

Transient Suppressors

18 V

O-CEDB-N2

UNIDIRECTIONAL

Not Qualified

20 V

SILICON

27 V

TVS8501V6MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.3 V

AVALANCHE

1 uA

1

6.3 V

CHIP CARRIER

6.3 V

150 Cel

-65 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

11.5 V

6.5 V

30

260

SILICON

9 V

IEC-61000-4-2, 4-5

ESDM3051N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.05 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

8.2 V

5.1 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

7 V

IEC-61000-4-2, 4-5

ESDR0524PMUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5.5 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-N10

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

15 V

6 V

e3

30

260

SILICON

NUP5150MUTBG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

6.8 V

AVALANCHE

5

SMALL OUTLINE

Transient Suppressors

5 V

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PDSO-N6

1

UNIDIRECTIONAL

Not Qualified

6.2 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

7.2 V

ESDL3552BPFCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 3 ELEMENTS

10.2 V

AVALANCHE

.05 uA

3

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N3

1

UNIDIRECTIONAL

ISOLATED

.3 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

18 V

6.5 V

NOT SPECIFIED

260

SILICON

11.5 V

IEC-61000-4-2, 4-5

HBL2050RP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

UNSPECIFIED

NO LEAD

1

YES

SQUARE

UNSPECIFIED

SINGLE

AVALANCHE

.5 uA

1

45 V

UNCASED CHIP

150 Cel

-40 Cel

S-XUUC-N1

UNIDIRECTIONAL

1.5 V

SILICON

NSPM1041BMUTBG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5.25 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

10.8 V

4.5 V

e4

30

260

SILICON

6 V

IEC-61000-4-2, 4-5

NSPM0051MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-65 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

11.5 V

6 V

30

260

SILICON

9 V

IEC-61000-4-2, 4-5

NSP8501V6MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.3 V

AVALANCHE

1 uA

1

6.3 V

CHIP CARRIER

6.3 V

150 Cel

-65 Cel

R-PBCC-N2

UNIDIRECTIONAL

11.5 V

6.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9 V

IEC-61000-4-2, 4-5

MR4045N

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

END

NO LEAD

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

39.5 V

AVALANCHE

1

DISK BUTTON

Transient Suppressors

30 V

O-CEDB-N2

UNIDIRECTIONAL

Not Qualified

34 V

SILICON

45 V

ESDL1531MX4T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.05 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

6.5 V

5.5 V

NOT SPECIFIED

260

SILICON

8.6 V

IEC-61000-4-2, 4-5

NUC2401MNTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

8

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 3 ELEMENTS

AVALANCHE

3

SMALL OUTLINE

5 V

TIN

R-XDSO-N8

UNIDIRECTIONAL

Not Qualified

6 V

e3

SILICON

8.6 V

NSPM3031MXT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4.6 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY

7.6 V

4 V

e4

30

260

SILICON

5.5 V

IEC-61000-4-2, 4-5

NUP4212UPMUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 6 ELEMENTS

15 V

AVALANCHE

6

SMALL OUTLINE

Transient Suppressors

4 V

125 Cel

-40 Cel

TIN

S-PDSO-N6

1

UNIDIRECTIONAL

ANODE

Not Qualified

EXCELLENT CLAMPING CAPABILITY

5.2 V

e3

30

260

SILICON

SZESDL2012MX2WT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1.6 V

AVALANCHE

.5 uA

1

1 V

CHIP CARRIER

1 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

.313 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

7.5 V

1.4 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.1 V

AEC-Q101; IEC-61000-4-2, 4-5

ESD5004MXTBG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON BIPOLAR TERMINAL, 4 ELEMENTS

AVALANCHE

1 uA

4

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N5

1

BIDIRECTIONAL

5 pF

LOW CAPACITANCE

9.1 V

3.9 V

30

260

SILICON

IEC-61000-4-2

SZESD7481MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE

12 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101; IEC-61000-4-2, 4-5

SZESDM3551N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.3 V

AVALANCHE

.1 uA

1

5.5 V

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

8.2 V

5.6 V

e4

30

260

SILICON

7 V

AEC-Q101; IEC-61000-4-2, 4-5; ISO 10605

ESD8451MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.9 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

LOW CAPACITANCE

19 V

5.5 V

e4

30

260

SILICON

8.3 V

IEC-61000-4-2

SZNSP8814MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

8

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

1.1 V

3.5 V

AVALANCHE

.5 uA

4

3 V

SMALL OUTLINE

3 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N8

1

UNIDIRECTIONAL

LOW CAPACITANCE

15 V

3.2 V

260

SILICON

5 V

AEC-Q101; IEC-61000-4-2, 4-5

NUP3112UPMUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

5.5 V

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

4 V

125 Cel

-40 Cel

MATTE TIN

S-PDSO-N6

1

UNIDIRECTIONAL

ANODE

Not Qualified

5.2 V

e3

30

260

SILICON

ESD5102FCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

5 V

AVALANCHE

.1 uA

2

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

R-PBCC-N3

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

6.5 V

3.68 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

6.5 V

IEC-61000-4-2

ESD8018MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 8 ELEMENTS

7 V

AVALANCHE

1 uA

8

3.3 V

SMALL OUTLINE

3.3 V

125 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PDSO-N10

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

4.8 V

5.5 V

30

260

SILICON

IEC-61000-4-2, 4-5

ESD7382N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1 uA

1

5 V

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

.25 W

.55 pF

EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE

10 V

5.2 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

SZESD8004MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

AVALANCHE

4

SMALL OUTLINE

3.3 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-N10

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

5.5 V

e3

30

260

SILICON

AEC-Q101; IEC-61000-4-2

ESD5382MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

14.2 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

UNIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

22 V

14.2 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4

ESD8351N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

1 uA

1

3.7 V

CHIP CARRIER

3.7 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

10 V

5.5 V

e4

SILICON

7.8 V

IEC-61000-4-2, 4-5

SZESD8008MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

14

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 8 ELEMENTS

AVALANCHE

8

SMALL OUTLINE

3.3 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-N14

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

5.5 V

e3

30

260

SILICON

8.5 V

AEC-Q101; IEC-61000-4-2, 4-5

CM1250-04QG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

NICKEL PALLADIUM GOLD

R-PDSO-N6

1

UNIDIRECTIONAL

Not Qualified

MO-229C

6.8 V

e4

30

260

SILICON

SZESD7471N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.3 V

150 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY

15 V

7 V

30

260

SILICON

AEC-Q101; IEC-61000-4-2, 4-5

SZESD7181MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

18.5 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

41.1 V

20.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

35 V

AEC-Q101; IEC-61000-4-2, 4-5

SZESD7551MXWT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6 V

AVALANCHE

.05 uA

1

3.3 V

SMALL OUTLINE

3.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE

13 V

5 V

e4

30

260

SILICON

7.5 V

AEC-Q101; IEC-61000-4-2, 4-5

ESD7451N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE

13 V

5 V

30

260

SILICON

7.5 V

IEC-61000-4-2, 4-5

SZNSP8814LMTWTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

1.1 V

3.5 V

AVALANCHE

.5 uA

4

3 V

SMALL OUTLINE

3 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-N10

1

UNIDIRECTIONAL

15 V

3.2 V

e3

30

260

SILICON

5 V

AEC-Q101, IEC-61000-4-2, 4-5

ESD5111PFCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

R-PBCC-N2

1

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

6.5 V

3.68 V

30

260

SILICON

6.5 V

IEC-61000-4-2

SZESDM3551MX2WT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.3 V

AVALANCHE

.1 uA

1

5.5 V

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

8.2 V

5.6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

7 V

AEC-Q101; IEC-61000-4-2, 4-5; ISO 10605

SZESD7571MXWT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.05 uA

1

5.3 V

SMALL OUTLINE

5.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N2

1

BIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE

15 V

7 V

e4

30

260

SILICON

AEC-Q101; IEC-61000-4-2, 4-5

ESD8111FCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.9 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

8 V

5.5 V

e3

30

260

SILICON

8.6 V

IEC-61000-4-2

ESD8024MNTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

24

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 24 ELEMENTS

1.1 V

7 V

AVALANCHE

.5 uA

24

2.5 V

CHIP CARRIER

2.5 V

125 Cel

-55 Cel

MATTE TIN

S-PQCC-N24

1

UNIDIRECTIONAL

ANODE

ULTRA LOW CAPACITANCE

8 V

5.5 V

e3

30

260

SILICON

9 V

IEC-61000-4-2, 4-5

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.