NO LEAD Transient Suppression Devices 1,724

Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

TPD1E01B04DPYR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

27 W

6.4 V

AVALANCHE

.01 uA

1

SMALL OUTLINE

3.6 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PSSO-N2

1

BIDIRECTIONAL

7 V

e4

30

260

SILICON

IEC-61000-4-2, 4-4, 4-5

TPD1E10B09QDPYRQ1

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

90 W

AVALANCHE

.1 uA

1

SMALL OUTLINE

9 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PSSO-N2

1

BIDIRECTIONAL

.162 W

13 V

9.5 V

e4

30

260

SILICON

AEC-Q101

UCLAMP0301PQTNT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

40 W

AVALANCHE

1

CHIP CARRIER

3 V

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

3

BIDIRECTIONAL

3.1 V

e4

260

SILICON

4.6 V

AEC-Q100; IEC-61000-4-2, 4-4

VESD05A1C-HD1-GS08

Vishay Intertechnology

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

80 W

6.7 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

125 Cel

-40 Cel

MATTE TIN

R-PDSO-N2

1

BIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

9.3 V

6 V

e3

SILICON

8 V

VESD12A1C-HD1-GS08

Vishay Intertechnology

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

92 W

14 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

12 V

125 Cel

-40 Cel

MATTE TIN

R-PDSO-N2

1

UNIDIRECTIONAL

Not Qualified

20 V

13.5 V

e3

SILICON

16 V

ESDALC12-1T2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

50 W

13 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

10 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

3

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

20 V

12 V

e4

30

260

SILICON

14 V

PGB1040805MR

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

UNSPECIFIED

GLASS

COMMON ANODE, 4 ELEMENTS

AVALANCHE

4

SPECIAL SHAPE

TIN OVER NICKEL

X-LDSS-N6

BIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

e3

30

260

SILICON

SP7538PUTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

9

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ZENER

1

SMALL OUTLINE

5 V

150 Cel

-40 Cel

R-PDSO-N9

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

MO-229

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

SP3042-01WTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20 W

AVALANCHE

1

CHIP CARRIER

5.3 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

SP3213-01UTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

MO-236

18 V

6.2 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

ESD1014MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

SQUARE

PLASTIC/EPOXY

SINGLE

450 W

5.3 V

AVALANCHE

5 uA

1

3.3 V

SMALL OUTLINE

Transient Suppressors

3.3 V

125 Cel

-40 Cel

MATTE TIN

S-PDSO-N10

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

11 V

5 V

e3

30

260

SILICON

IEC-61000-4-2

D5V0FS4U10LP-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

20 W

AVALANCHE

4

SMALL OUTLINE

5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N10

1

UNIDIRECTIONAL

.35 W

5.5 V

e4

260

SILICON

IEC-61000-4-2, 4-5

PESD1LVDS,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5.5 V

85 Cel

-40 Cel

R-PDSO-N10

1

UNIDIRECTIONAL

6 V

30

260

SILICON

9 V

AEC-Q101; IEC-60134

SP0402B-ELC-01ETG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

7 V

85 Cel

-30 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

SESD0402X1UN-0030-088

TE Connectivity

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

D5V0F4U10LP-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.2 uA

1

5.5 V

SMALL OUTLINE

5.5 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-N10

1

UNIDIRECTIONAL

.38 W

12 V

6 V

e3

30

260

SILICON

IEC61000-4-2

AQ3045-01ETG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

40 W

7.8 V

AVALANCHE

.1 uA

1

5.3 V

SMALL OUTLINE

5.3 V

150 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

NONE

LOW CAPACITANCE

MO-236

12 V

6.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9 V

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

EZAEG2N50AX

Panasonic

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1 uA

1

30 V

SMALL OUTLINE

30 V

R-PDSO-N2

BIDIRECTIONAL

LOW CAPACITANCE

100 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

LXES1UTAA1-157

Murata Manufacturing

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

6 V

85 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

SP1020-01WTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

6 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

SP3022-01ETG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20 W

AVALANCHE

1

CHIP CARRIER

5.3 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

MO-236

6.8 V

40

260

SILICON

9 V

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

DT1240A-08LP3810-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

9

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

55 W

AVALANCHE

.5 uA

1

3.3 V

SMALL OUTLINE

3.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N9

UNIDIRECTIONAL

.35 W

5 V

e4

260

SILICON

IEC-61000-4-2, 4-5

PESD3V3C1BSFYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

IEC-61643-321

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-60134; IEC-61000-4-2, 4-5

ESDR0502NMUTBG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

100 W

6 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5.5 V

125 Cel

-40 Cel

Nickel/Gold/Palladium (Ni/Au/Pd)

R-PDSO-N6

1

UNIDIRECTIONAL

Not Qualified

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

SP1255PUTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

AVALANCHE

2

SMALL OUTLINE

12 V

125 Cel

-40 Cel

MATTE TIN

R-PDSO-N6

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

MO-229

4.5 V

e3

10

260

SILICON

7.5 V

AEC-Q101

SPHV36-01ETG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

200 W

AVALANCHE

1

CHIP CARRIER

36 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

MO-236

40 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101

AQ3130-01ETG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.05 uA

1

28 V

CHIP CARRIER

28 V

150 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

MO-236

48 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

D3V3F8U9LP3810-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

9

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 8 ELEMENTS

32 W

7 V

AVALANCHE

1 uA

8

3.3 V

SMALL OUTLINE

3.3 V

85 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N9

1

UNIDIRECTIONAL

.35 W

ULTRA LOW CAPACITANCE

5 V

5.5 V

e4

260

SILICON

IEC-61000-4-2,4-5; MIL-STD-202

ESD128B1W0201E6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

53 W

AVALANCHE

1

CHIP CARRIER

18 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD5581N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.2 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY

12 V

5.2 V

e4

30

260

SILICON

7.5 V

IEC-61000-4-2

ESDL4151MX4T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

16.6 V

AVALANCHE

1 uA

1

15 V

CHIP CARRIER

15 V

150 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

26 V

15.5 V

e3

30

260

SILICON

19.5 V

IEC-61000-4-2, 4-5

PESD5V0X1BCSFYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

1

BIDIRECTIONAL

IEC-61643-321

6 V

30

260

SILICON

IEC-60134; IEC-61000-4-2, 4-5

SP0402B-ULC-01ETG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

7 V

85 Cel

-30 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

SP1233-01ETG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

180 W

4.2 V

AVALANCHE

.5 uA

1

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

8.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101, IEC-61000-4-2, 4-4, 4-5

SP3118-01ETG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

18 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

MO-236

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

SP3522-01ETG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

9.2 V

AVALANCHE

1 uA

1

5 V

CHIP CARRIER

7 V

125 Cel

-45 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

14.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

SP4042-02UTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

SQUARE

PLASTIC/EPOXY

SINGLE

2500 W

AVALANCHE

1

SMALL OUTLINE

3.3 V

85 Cel

-40 Cel

S-PDSO-N10

UNIDIRECTIONAL

LOW CAPACITANCE

MO-229

3.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

DESD3V3Z1BCSF-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

25 W

AVALANCHE

1

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

NICKEL GOLD

R-XBCC-N2

1

BIDIRECTIONAL

.25 W

5 V

e4

30

260

SILICON

9 V

IEC-61000-4-2

VCUT15A1-SD0-G4-08

Vishay Intertechnology

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

65 W

16.8 V

AVALANCHE

.05 uA

1

15 V

CHIP CARRIER

15 V

150 Cel

-55 Cel

GOLD OVER NICKEL

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

26 V

15.8 V

e4

260

SILICON

17.8 V

IEC-61000-4-2,4-5

DF2S5M4SL,L3F

Toshiba

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

4.3 V

AVALANCHE

.1 uA

1

3.6 V

SMALL OUTLINE

3.6 V

150 Cel

R-PDSO-N2

1

UNIDIRECTIONAL

LOW CAPACITANCE

15 V

3.7 V

260

SILICON

5.5 V

IEC-61000-4-2, 4-5

PESD3V3X4UHMYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

6.2 V

AVALANCHE

.1 uA

4

3.3 V

SMALL OUTLINE

3.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N6

1

UNIDIRECTIONAL

4.5 V

5 V

e4

30

260

SILICON

7 V

IEC-60134; IEC-61000-4-2, 4-5

PESD5V0V2BMYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

5 V

150 Cel

-55 Cel

TIN

R-PBCC-N3

1

BIDIRECTIONAL

CATHODE

IEC-61643-321

5.5 V

e3

30

260

SILICON

7.8 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

SP15-01WTG-C-HV

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

100 W

AVALANCHE

.1 uA

1

15 V

CHIP CARRIER

15 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

MO-236

27 V

16.7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

SP3522-01UTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

9.2 V

AVALANCHE

1 uA

1

5 V

CHIP CARRIER

7 V

125 Cel

-45 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

14.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

SP36-01WTG-C-HV

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

100 W

AVALANCHE

.1 uA

1

36 V

CHIP CARRIER

36 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

MO-236

48 V

40 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

TCS-DL004-750-WH

Bourns

CURRENT SUPPRESSORS

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

125 Cel

-55 Cel

R-PBCC-N6

BIDIRECTIONAL

40 V

SILICON

D3V3H1B2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

380 W

5.15 V

AVALANCHE

.5 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

9.5 V

3.8 V

e4

30

260

SILICON

6.5 V

IEC-61000-4-2, IEC-61000-4-5

D3V3X8U9LP3810-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

9

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 8 ELEMENTS

20 W

7 V

AVALANCHE

1 uA

8

3.3 V

SMALL OUTLINE

3.3 V

85 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N9

1

UNIDIRECTIONAL

.35 W

ULTRA LOW CAPACITANCE

7 V

5.5 V

e4

30

260

SILICON

IEC-61000-4-2,4-5

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.