NO LEAD Transient Suppression Devices 1,724

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

TPD1E01B04DPYRQ1

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

27 W

6.4 V

AVALANCHE

.01 uA

1

2.5 V

CHIP CARRIER

3.6 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD SILVER

R-PBCC-N2

2

BIDIRECTIONAL

7 V

e4

260

SILICON

AEC-Q101

TPD2E1B06DRLR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

YES

RECTANGULAR

PLASTIC/EPOXY

8.25 V

AVALANCHE

.01 uA

Transient Suppressors

5.5 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD SILVER

R-PDSO-N6

1

BIDIRECTIONAL

11 V

e4

30

260

SILICON

TVS0500DRVR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

7.9 V

AVALANCHE

.0055 uA

SMALL OUTLINE

5 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

S-PDSO-N6

1

UNIDIRECTIONAL

9.5 V

7.5 V

e4

30

260

SILICON

8.4 V

IEC-61000-4-2, 4-4, 4-5; IEC-61643-321

CDDFN10-3324P

Bourns

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

AVALANCHE

1

SMALL OUTLINE

3.3 V

85 Cel

-55 Cel

R-PDSO-N10

1

UNIDIRECTIONAL

LOW CAPACITANCE

4.5 V

10

260

SILICON

IEC-61000-4-2

DESD5V0S1BL-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

130 W

7.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

14 V

5.5 V

e4

30

260

SILICON

9.5 V

IEC-61000-4-5

DESD5V0U1BL-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

5.5 V

e4

260

SILICON

9.5 V

IEC-61000-4-5

IP4284CZ10-TBR,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

ZENER

1

SMALL OUTLINE

Transient Suppressors

85 Cel

-40 Cel

MATTE TIN

R-PDSO-N10

1

UNIDIRECTIONAL

8 V

6 V

e3

30

260

SILICON

9 V

IEC-60134

JANS1N6143AUS

Microchip Technology

TRANS VOLTAGE SUPPRESSOR DIODE

END

NO LEAD

2

YES

ROUND

UNSPECIFIED

SINGLE

1500 W

ZENER

1

LONG FORM

8.4 V

TIN LEAD

O-XELF-N2

UNIDIRECTIONAL

ISOLATED

Qualified

7.5 W

10.4 V

e0

SILICON

MIL-19500/516

JANS1N6157AUS

Microchip Technology

TRANS VOLTAGE SUPPRESSOR DIODE

END

NO LEAD

2

YES

ROUND

UNSPECIFIED

SINGLE

1500 W

ZENER

1

LONG FORM

32.7 V

TIN LEAD

O-XELF-N2

UNIDIRECTIONAL

ISOLATED

Qualified

7.5 W

40.9 V

e0

SILICON

MIL-19500/516

SPHV36-01KTG-C

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

200 W

AVALANCHE

1

CHIP CARRIER

36 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

MO-236

40 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

SZESD7462N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

16 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

16.5 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

28 V

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

TPD1E0B04DPLT

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

15 W

6.7 V

AVALANCHE

.01 uA

1

SMALL OUTLINE

3.6 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PSSO-N2

1

BIDIRECTIONAL

7.2 V

e4

30

260

SILICON

IEC-61000-4-2, 4-4, 4-5

TPD4S010DQAR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

25 W

AVALANCHE

.1 uA

1

SMALL OUTLINE

5.5 V

85 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PDSO-N10

1

UNIDIRECTIONAL

LOW CAPACITANCE

20 V

9 V

e4

30

260

SILICON

IEC-61000-4-2; IEC-61000-4-5

PESD36VS1UL,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

39 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

36 V

150 Cel

-55 Cel

TIN

R-PBCC-N2

1

UNIDIRECTIONAL

58 V

38.2 V

e3

30

260

SILICON

39.8 V

AEC-Q101; IEC-60134; IEC-61000-4-5

PESD5V0F1USF,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

IEC-61643-321

6 V

SILICON

10 V

IEC-60134; IEC-61000-4-2, 4-5

PESD5V0U1BL,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

7 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

TIN

R-PDSO-N2

1

BIDIRECTIONAL

Not Qualified

5.5 V

e3

30

260

SILICON

9.5 V

IP4242CZ6,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

R-PBCC-N6

UNIDIRECTIONAL

MO-252

6 V

SILICON

9 V

PESD5V0L1ULD

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

42 W

6.8 V

AVALANCHE

.1 uA

1

5 V

SMALL OUTLINE

5 V

150 Cel

-55 Cel

TIN

R-PDSO-N2

1

UNIDIRECTIONAL

Not Qualified

25 pF

LOW CAPACITANCE

12 V

6.4 V

e3

SILICON

7.2 V

AEC-Q101

TPD2E007YFMR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

4

YES

SQUARE

UNSPECIFIED

COMPLEX

14 V

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

S-XBCC-N4

BIDIRECTIONAL

Not Qualified

.27 W

14 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

VESD08C1-HD1-G3-08

Vishay Intertechnology

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

100 W

9.85 V

AVALANCHE

.1 uA

1

8 V

SMALL OUTLINE

8 V

150 Cel

-55 Cel

R-PDSO-N2

UNIDIRECTIONAL

37 pF

15.3 V

9.4 V

SILICON

10.3 V

IEC-61000-4-2, 4-5

VESD08C1-HD1HG3-08

Vishay Intertechnology

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

100 W

9.85 V

AVALANCHE

.1 uA

1

8 V

SMALL OUTLINE

8 V

150 Cel

-55 Cel

R-PDSO-N2

UNIDIRECTIONAL

37 pF

15.3 V

9.4 V

SILICON

10.3 V

AEC-Q101; IEC-61000-4-2, 4-5

ESD7571N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.3 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY

7 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-5

ESDM3031MXT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

20 pF

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE, ULTRA LOW CAPACITANCE

8 V

4.4 V

e4

30

260

SILICON

6.2 V

IEC-61000-4-2

HSP062-2M6

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.1 uA

1

3 V

SMALL OUTLINE

3 V

150 Cel

-40 Cel

R-PDSO-N6

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

18 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC61000-4-2

PESD5V0L1USF,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

11 W

7 V

AVALANCHE

.1 uA

1

5 V

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-55 Cel

R-PDSO-N2

UNIDIRECTIONAL

9 pF

LOW CAPACITANCE

10.5 V

6 V

SILICON

8 V

PESD5V0L4UF,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

6.8 V

AVALANCHE

.025 uA

4

5 V

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-65 Cel

TIN

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

MO-252

13 V

6.46 V

e3

30

260

SILICON

7.14 V

AEC-Q101

DRTR5V0U1LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

HIGH RELIABILITY

6 V

e3

30

260

SILICON

AEC-Q101

ESD205B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

30 W

8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.5 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

8.5 V

e4

SILICON

ESD3V3S1B02LSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.3 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

PESD5V0L1UL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

42 W

6.8 V

AVALANCHE

.1 uA

1

5 V

SMALL OUTLINE

5 V

150 Cel

-55 Cel

TIN

R-PDSO-N2

1

UNIDIRECTIONAL

Not Qualified

25 pF

LOW CAPACITANCE

12 V

6.4 V

e3

SILICON

7.2 V

AEC-Q101

PGB0010603MR

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

125 Cel

-65 Cel

COPPER NICKEL TIN

R-PDSO-N2

BIDIRECTIONAL

Not Qualified

ULTRA LOW CAPACITANCE

e2

30

260

SILICON

IEC-61000-4-2

PTVS10VU1UPAZ

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

3000 W

AVALANCHE

1

SMALL OUTLINE

10 V

150 Cel

-55 Cel

TIN

R-PDSO-N3

1

UNIDIRECTIONAL

CATHODE

IEC-61643-321

11.1 V

e3

30

260

SILICON

12.3 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

RCLAMP0524PQTCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

75 W

AVALANCHE

1

SMALL OUTLINE

5 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N10

1

UNIDIRECTIONAL

6.5 V

e4

260

SILICON

11 V

AEC-Q100; IEC-61000-4-2, 4-4, 4-5

SP3011-06UTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

14

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ZENER

1

SMALL OUTLINE

Transient Suppressors

6 V

R-PDSO-N14

UNIDIRECTIONAL

ISOLATED

Not Qualified

1 W

LOW CAPACITANCE

12.5 V

40

260

SILICON

TPD4S009DRYR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

25 W

AVALANCHE

.1 uA

1

CHIP CARRIER

5.5 V

85 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N6

1

UNIDIRECTIONAL

LOW CAPACITANCE

MO-287UFAD

20 V

9 V

e4

30

260

SILICON

IEC-61000-4-2; IEC-61000-4-5

UCLAMP1871P.TNT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

1500 W

AVALANCHE

1

CHIP CARRIER

18 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-XBCC-N2

1

UNIDIRECTIONAL

20 V

e4

260

SILICON

25 V

AEC-Q101; IEC-61000-4-5

D5V0X1B2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

7 V

e4

260

SILICON

ESD204DQAR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

50 W

AVALANCHE

.01 uA

4

SMALL OUTLINE

3.6 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PSSO-N10

1

BIDIRECTIONAL

11.5 V

5 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

7.9 V

IEC-61000-4-2, 4-4, 4-5

ESD230B1W0201E6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

56 W

8 V

AVALANCHE

.1 uA

1

5.5 V

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

15 V

6.05 V

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD300B102LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

260 W

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

e4

SILICON

ESD8704MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

AVALANCHE

4

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

MATTE TIN

R-PBCC-N10

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

e3

30

260

SILICON

6 V

IEC-61000-4-2

ESDM3551N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.3 V

AVALANCHE

.1 uA

1

5.5 V

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

8.2 V

5.6 V

e4

30

260

SILICON

7 V

IEC-61000-4-2, 4-5; ISO 10605

PESD3V3L1UL,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

45 W

5.6 V

AVALANCHE

.3 uA

1

3.3 V

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

-55 Cel

TIN

R-PDSO-N2

1

UNIDIRECTIONAL

LOW CAPACITANCE

11 V

5.3 V

e3

30

260

SILICON

6 V

AEC-Q101; IEC-60134

PUSB3F96

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

3 V

85 Cel

-40 Cel

R-PDSO-N10

UNIDIRECTIONAL

IEC-61643-321

6 V

SILICON

IEC-60134; IEC-61000-4-2, 4-5

RCLAMP3391ZCTFT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

45 W

8 V

AVALANCHE

.05 uA

1

3.3 V

CHIP CARRIER

3.3 V

85 Cel

-40 Cel

R-XBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

6.5 V

5.5 V

SILICON

10 V

IEC-61000-4-2, 4-4

SESD1004Q4UG-0020-090

TE Connectivity

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

AVALANCHE

4

SMALL OUTLINE

7 V

125 Cel

-55 Cel

R-PDSO-N10

UNIDIRECTIONAL

LOW CAPACITANCE

SILICON

AEC-Q101

TCS-DL004-250-WH

Bourns

CURRENT SUPPRESSORS

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

125 Cel

-55 Cel

R-PBCC-N6

BIDIRECTIONAL

40 V

SILICON

VBUS052CD-FAH-GS08

Vishay Intertechnology

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

63 W

7.9 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

125 Cel

-40 Cel

MATTE TIN

R-PDSO-N6

1

BIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

15 V

6.9 V

e3

SILICON

8.7 V

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.