NO LEAD Transient Suppression Devices 1,724

Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

VBUS054B-HSF-GS08

Vishay Intertechnology

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

SINGLE

200 W

7.2 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

125 Cel

-40 Cel

MATTE TIN

S-PDSO-N6

1

UNIDIRECTIONAL

CATHODE

Not Qualified

LOW CAPACITANCE

15 V

6.3 V

e3

10

260

SILICON

8 V

UCLAMP0571P.TNT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

1500 W

7 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-XBCC-N2

1

UNIDIRECTIONAL

15 V

6 V

e4

260

SILICON

9 V

IEC-61000-4-2, 4-4, 4-5

PESD15VS1ULD,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

18 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

15 V

150 Cel

TIN

R-PDSO-N2

1

UNIDIRECTIONAL

Not Qualified

17.6 V

e3

30

260

SILICON

18.4 V

SP1003-01ETG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

MATTE TIN

R-PBCC-N2

UNIDIRECTIONAL

Not Qualified

12 V

e3

40

260

SILICON

TPD1E1B04DPYR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

50 W

6.4 V

AVALANCHE

.1 uA

1

SMALL OUTLINE

3.6 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PSSO-N2

1

BIDIRECTIONAL

6.3 V

e4

NOT SPECIFIED

260

SILICON

IEC-61000-4-2, 4-4, 4-5

STN061050BL40

Eaton Corporation

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

100 W

8 V

AVALANCHE

1 uA

1

5 V

CHIP CARRIER

5 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

23 V

6 V

SILICON

10 V

ESD231B1W0201E6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

132 W

AVALANCHE

.02 uA

1

5.5 V

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

10 V

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD351DPYR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

36 W

AVALANCHE

.01 uA

1

SMALL OUTLINE

3.6 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PSSO-N2

1

UNIDIRECTIONAL

6.5 V

4.5 V

e4

30

260

SILICON

7.5 V

IEC-61000-4-2, 4-4, 4-5

SESD0402X1UN-0020-090

TE Connectivity

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

9 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

7 V

125 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

LOW CAPACITANCE

9.2 V

260

SILICON

AEC-Q101

RCLAMP2504N.TCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

SQUARE

PLASTIC/EPOXY

SINGLE

450 W

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

2.5 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

S-PDSO-N10

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT, LOW CAPACITANCE

15 V

e4

30

260

SILICON

SESD5481MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.85 V

AVALANCHE

1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

23 V

5.7 V

e4

30

260

SILICON

8 V

IEC-61000-4-2, 4-4, 4-5

ESD131B1W0201E6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

26 W

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

6 V

SILICON

10.5 V

IEC-61000-4-2, 4-4, 4-5

ESD224DQAR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 4 ELEMENTS

17 W

AVALANCHE

.01 uA

4

SMALL OUTLINE

3.6 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PSSO-N10

1

BIDIRECTIONAL

8 V

5 V

e4

30

260

SILICON

7.9 V

IEC-61000-4-2, 4-4, 4-5

ESD7551N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6 V

AVALANCHE

.05 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE

13 V

5 V

e4

30

260

SILICON

7.5 V

IEC-61000-4-2, 4-5

ESD8006MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 6 ELEMENTS

7 V

AVALANCHE

6

SMALL OUTLINE

Transient Suppressors

3.3 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-N10

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

9.5 V

5.5 V

e3

30

260

SILICON

IEC-61000-4-2

ESD8104MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

5 V

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

3.3 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-N10

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

11.4 V

4 V

e3

30

260

SILICON

IEC-61000-4-2

TPD1E05U06QDPYRQ1

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

40 W

AVALANCHE

.01 uA

1

SMALL OUTLINE

5.5 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PSSO-N2

1

UNIDIRECTIONAL

23 V

6.4 V

e4

30

260

SILICON

8.7 V

IEC-61000-4-2, 4-4, 4-5

SP3010-04UTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

6 V

150 Cel

R-PDSO-N10

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

MO-223

12.3 V

40

260

SILICON

DESD3V3S1BL-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

35 W

AVALANCHE

1

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

3.8 V

e4

30

260

SILICON

6.5 V

ESD105B102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.5 V

125 Cel

-55 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

22 V

e4

SILICON

14 V

STN161050U852

Eaton Corporation

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

2000 W

7 V

AVALANCHE

1 uA

1

5 V

CHIP CARRIER

5 V

125 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

17 V

6 V

SILICON

8 V

IEC-61000-4-2,4-5

SZESD7241N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

24 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

24.3 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

28 V

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

PESD5V0F1BL,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.5 V

125 Cel

TIN

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

15 V

6 V

e3

30

260

SILICON

10 V

TPD4E004DRYR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5.5 V

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N6

1

UNIDIRECTIONAL

Not Qualified

MO-287UFAD

14 V

6 V

e4

30

260

SILICON

8 V

IEC-61000-4-2

TVS1400DRVR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

16.9 V

AVALANCHE

.016 uA

SMALL OUTLINE

14 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

S-PDSO-N6

1

UNIDIRECTIONAL

18.5 V

16.2 V

e4

30

260

SILICON

17.8 V

IEC-61000-4-2, 4-4, 4-5; IEC-61643-321

PESD5V0V1BLD,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

45 W

6.8 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

TIN

R-PDSO-N2

1

BIDIRECTIONAL

Not Qualified

12.5 V

5.8 V

e3

30

260

SILICON

7.8 V

STN101033B101

Eaton Corporation

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

100 W

3.3 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

11 V

3.6 V

SILICON

IEC-61000-4-2,4-5

SZESD7104MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

AVALANCHE

1 uA

5

5 V

SMALL OUTLINE

5 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-N10

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

19.5 V

5.5 V

e3

30

260

SILICON

AEC-Q101, IEC-61000-4-2

ESD203B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

115 W

AVALANCHE

.05 uA

1

12 V

CHIP CARRIER

13.2 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

23 V

e4

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD401DPYR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

67 W

AVALANCHE

.01 uA

1

SMALL OUTLINE

5.5 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PSSO-N2

1

BIDIRECTIONAL

15 V

7.5 V

e4

NOT SPECIFIED

260

SILICON

9.1 V

IEC-61000-4-2, 4-4, 4-5

PESD5V0S1ULD,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

6.8 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

TIN

R-PDSO-N2

1

UNIDIRECTIONAL

Not Qualified

20 V

6.4 V

e3

30

260

SILICON

7.2 V

TPD1E01B04DPYT

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

27 W

6.4 V

AVALANCHE

.01 uA

1

SMALL OUTLINE

3.6 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PSSO-N2

1

BIDIRECTIONAL

7 V

e4

30

260

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD7104MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

UNSPECIFIED

COMPLEX

AVALANCHE

1 uA

4

5 V

SMALL OUTLINE

5 V

125 Cel

-55 Cel

MATTE TIN

R-XDSO-N10

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

19.5 V

5.5 V

e3

30

260

SILICON

IEC-61000-4-2

SP3222-02ETG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

30 W

8 V

AVALANCHE

.1 uA

2

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

R-PBCC-N3

1

UNIDIRECTIONAL

ANODE

LOW CAPACITANCE

10 V

6.1 V

SILICON

9 V

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

UCLAMP3311T.TCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

40 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

8 V

e4

30

260

SILICON

PESD24VS1ULD,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

27 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

24 V

150 Cel

TIN

R-PDSO-N2

1

UNIDIRECTIONAL

Not Qualified

70 V

26.5 V

e3

30

260

SILICON

27.5 V

PESD5V0X1BL,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

TIN

R-PBCC-N2

1

BIDIRECTIONAL

Not Qualified

6 V

e3

30

260

SILICON

9.5 V

ESD5V3U2U03LRHE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

UNSPECIFIED

COMMON ANODE, 2 ELEMENTS

6 V

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

5.3 V

125 Cel

-40 Cel

PALLADIUM GOLD

R-XBCC-N3

1

UNIDIRECTIONAL

CATHODE

12 V

6 V

e4

SILICON

TPD4E05U06DQA

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

35 W

AVALANCHE

1

SMALL OUTLINE

5.5 V

85 Cel

-40 Cel

R-PDSO-N10

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

SILICON

8.5 V

IEC-61000-4-2; IEC-61000-4-5

UCLAMP0511T.TCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

8.2 V

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

5 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

15 V

6 V

e4

30

260

SILICON

9.5 V

ESD103B102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

15 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

e4

SILICON

ESD204B102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

14 V

150 Cel

-55 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

8.5 V

e4

SILICON

14 V

IP4292CZ10-TBR,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

85 Cel

-40 Cel

MATTE TIN

R-PDSO-N10

1

UNIDIRECTIONAL

4 V

6 V

e3

30

260

SILICON

IEC-60134

PUSB3FR4

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

AVALANCHE

4

SMALL OUTLINE

85 Cel

-40 Cel

R-PDSO-N10

UNIDIRECTIONAL

5.5 V

SILICON

IEC-60134; IEC-61000-4-2, 4-5

SP3021-01ETG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

MO-236

14.7 V

7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

VESD03A1B-HD1-GS08

Vishay Intertechnology

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

31 W

6 V

AVALANCHE

.5 uA

1

3.5 V

SMALL OUTLINE

Transient Suppressors

3.3 V

125 Cel

-40 Cel

MATTE TIN

R-PDSO-N2

1

UNIDIRECTIONAL

Not Qualified

ASYMMETRICAL

9 V

5 V

e3

SILICON

6.6 V

IEC-61000-4-2, 4-5

STN061050B101

Eaton Corporation

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

80 W

5 V

AVALANCHE

100 uA

1

5 V

CHIP CARRIER

5 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

15 V

5.5 V

SILICON

IEC-61000-4-2,4-4,4-5

SZESD7016MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 8 ELEMENTS

5.5 V

AVALANCHE

8

SMALL OUTLINE

Transient Suppressors

5 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-N10

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

10 V

5.5 V

e3

30

260

SILICON

AEC-Q101; IEC-61000-4-2

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.