NO LEAD Transient Suppression Devices 1,724

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

ESDALC6V1-5T6

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

25 W

6.65 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

125 Cel

R-PDSO-N6

UNIDIRECTIONAL

Not Qualified

6.1 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

7.2 V

HSP051-4M5

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

5

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.4 V

AVALANCHE

.07 uA

1

5 V

SMALL OUTLINE

5 V

150 Cel

-40 Cel

R-PDSO-N5

1

UNIDIRECTIONAL

11.3 V

5.7 V

SILICON

IEC-61000-4-2

ESDCAN03-2BM3Y

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

AVALANCHE

.05 uA

2

24 V

SMALL OUTLINE

24 V

175 Cel

-55 Cel

R-PDSO-N3

BIDIRECTIONAL

36.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101; ISO 7637-3

USBULC6-2N4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

4

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

50 W

AVALANCHE

1

SMALL OUTLINE

3 V

150 Cel

-40 Cel

R-PDSO-N4

UNIDIRECTIONAL

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

ESDAVLC12-1BV2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

10.5 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

12 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

HSP061-2N4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

4

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.1 uA

1

3 V

SMALL OUTLINE

150 Cel

-40 Cel

R-PDSO-N4

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

ESDALC6V1-1BT2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

100 W

8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

125 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-XBCC-N2

3

BIDIRECTIONAL

Not Qualified

6.1 V

e4

30

260

SILICON

8 V

ESDA8V2-1MX2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

500 W

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

8.2 V

e4

30

260

SILICON

ESD051-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

110 W

AVALANCHE

.07 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

11 V

5.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC61000-4-2

ESDAULC5-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

140 W

7.15 V

AVALANCHE

.07 uA

1

3 V

CHIP CARRIER

3 V

150 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

13.5 V

5.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

8.5 V

IEC-61000-4-2

ESDALC14-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

100 W

AVALANCHE

1

CHIP CARRIER

12 V

150 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

13 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

ESDAVLC6V1-1BM2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

125 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

3

BIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

6.1 V

e4

30

260

SILICON

ESDA24P140-1U3M

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4500 W

24 V

AVALANCHE

.2 uA

1

22 V

SMALL OUTLINE

22 V

150 Cel

-55 Cel

S-PDSO-N3

1

UNIDIRECTIONAL

CATHODE

38 V

22.7 V

SILICON

25.2 V

IEC-61000-4-2, 4-4

ESDAXLC18-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

50 W

AVALANCHE

1

CHIP CARRIER

18 V

150 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

ESDA6V1-5T6

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

35 W

6.65 V

AVALANCHE

5

CHIP CARRIER

Transient Suppressors

125 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

6.1 V

e4

30

260

SILICON

7.2 V

HSP061-4M10Y

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

3 V

150 Cel

-40 Cel

R-PDSO-N10

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101; IEC-61000-4-2

ESDAVLC8-1BU2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

17 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

125 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

8.5 V

e4

30

260

SILICON

HSP051-4N10

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

9

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5.8 V

AVALANCHE

.1 uA

1

3.6 V

CHIP CARRIER

150 Cel

-40 Cel

R-PBCC-N9

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

10 V

4.5 V

SILICON

IEC61000-4-2

ESDALC14V2-1U2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

15.6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

125 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

e4

30

260

SILICON

ESDAVLC8-1BT2Y

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

11 V

AVALANCHE

.05 uA

1

3 V

CHIP CARRIER

3 V

125 Cel

-50 Cel

R-PBCC-N2

1

BIDIRECTIONAL

HIGH RELIABILITY, LOW CAPACITANCE

8.5 V

SILICON

14 V

AEC-Q101, IEC-61000-4-2

ESDALC6V1-1BM2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

140 W

8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

125 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

3

BIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

6.1 V

e4

30

260

SILICON

8 V

USBULC1606-4M8

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

8

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

70 W

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

125 Cel

R-PDSO-N8

UNIDIRECTIONAL

Not Qualified

28 V

6.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9.2 V

HSP061-2M6

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.1 uA

1

3 V

SMALL OUTLINE

150 Cel

-40 Cel

R-PDSO-N6

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

SILICON

IEC-61000-4-2

HSP061-4YN8

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

8

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

AVALANCHE

9

SMALL OUTLINE

150 Cel

-40 Cel

R-PDSO-N8

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

6 V

245

SILICON

PTVS10VU1UPA

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

3000 W

AVALANCHE

1

SMALL OUTLINE

10 V

150 Cel

-55 Cel

S-PDSO-N3

UNIDIRECTIONAL

CATHODE

IEC-61643-321

11.1 V

SILICON

12.3 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

934065614115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ZENER

1

SMALL OUTLINE

85 Cel

-40 Cel

R-PDSO-N10

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

SILICON

9 V

IEC-60134

PTVS15VZ1USK

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1900 W

AVALANCHE

1

CHIP CARRIER

15 V

125 Cel

-40 Cel

R-PBCC-N2

1

UNIDIRECTIONAL

CATHODE

IEC-61643-321

16.7 V

30

260

SILICON

19.4 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PTVS10VZ1USK

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

2000 W

12 V

AVALANCHE

.2 uA

1

10 V

CHIP CARRIER

10 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

CATHODE

27 V

11.1 V

SILICON

12.9 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PTVS26VZ1USK

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1850 W

31.1 V

AVALANCHE

.2 uA

1

26 V

CHIP CARRIER

26 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

CATHODE

57.5 V

28.9 V

SILICON

33.4 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PTVS18VZ1USK,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1800 W

AVALANCHE

1

CHIP CARRIER

18 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

CATHODE

IEC-61643-321

20 V

SILICON

23.2 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PTVS12VU1UPA

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

3000 W

AVALANCHE

1

SMALL OUTLINE

12 V

150 Cel

-55 Cel

S-PDSO-N3

UNIDIRECTIONAL

CATHODE

IEC-61643-321

13.3 V

SILICON

14.7 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PTVS7V5Z1USK

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

2200 W

9 V

AVALANCHE

.2 uA

1

7.5 V

CHIP CARRIER

7.5 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

CATHODE

22 V

8.33 V

SILICON

9.65 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PTVS26VU1UPA

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

3000 W

AVALANCHE

1

SMALL OUTLINE

26 V

150 Cel

-55 Cel

S-PDSO-N3

UNIDIRECTIONAL

CATHODE

IEC-61643-321

28.9 V

SILICON

31.9 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PTVS15VU1UPA

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

3000 W

AVALANCHE

1

SMALL OUTLINE

15 V

150 Cel

-55 Cel

S-PDSO-N3

UNIDIRECTIONAL

CATHODE

IEC-61643-321

16.7 V

SILICON

18.5 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PTVS26VU1UPA,147

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

3000 W

AVALANCHE

1

SMALL OUTLINE

26 V

150 Cel

-55 Cel

S-PDSO-N3

UNIDIRECTIONAL

CATHODE

IEC-61643-321

28.9 V

SILICON

31.9 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

934061198115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

6.8 V

AVALANCHE

.025 uA

4

5 V

CHIP CARRIER

5 V

150 Cel

-65 Cel

R-PBCC-N6

UNIDIRECTIONAL

LOW CAPACITANCE

MO-252

13 V

6.46 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

7.14 V

AEC-Q101

PHDMI2F4

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1 uA

1

3 V

SMALL OUTLINE

3 V

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N10

1

UNIDIRECTIONAL

4.6 V

6 V

e4

30

260

SILICON

IEC-60134; IEC-61000-4-2, 4-5

PTVS12VZ1USK

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1900 W

14.4 V

AVALANCHE

.2 uA

1

12 V

BOTTOM

12 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

CATHODE

29 V

13.3 V

SILICON

15.4 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PTVS18VU1UPA

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

3000 W

AVALANCHE

1

SMALL OUTLINE

18 V

150 Cel

-55 Cel

S-PDSO-N3

UNIDIRECTIONAL

CATHODE

IEC-61643-321

20 V

SILICON

22.1 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PTVS5V0Z1USKN

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1200 W

7 V

AVALANCHE

1 uA

1

5 V

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

CATHODE

18 V

6.4 V

SILICON

7.8 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PTVS5V0Z1USK

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1200 W

7 V

AVALANCHE

1 uA

1

5 V

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

CATHODE

18 V

6.4 V

SILICON

7.8 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PTVS18VZ1USK

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1800 W

AVALANCHE

1

CHIP CARRIER

18 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

CATHODE

IEC-61643-321

20 V

SILICON

23.2 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PTVS12VZ1USKN

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

2100 W

14.4 V

AVALANCHE

.2 uA

1

12 V

CHIP CARRIER

12 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

CATHODE

32 V

13.3 V

SILICON

15.4 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PTVS7V5U1UPA,147

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

3000 W

AVALANCHE

1

SMALL OUTLINE

7.5 V

150 Cel

-55 Cel

S-PDSO-N3

UNIDIRECTIONAL

CATHODE

IEC-61643-321

8.33 V

SILICON

9.21 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PTVS10VU1UPA,147

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

3000 W

AVALANCHE

1

SMALL OUTLINE

10 V

150 Cel

-55 Cel

S-PDSO-N3

UNIDIRECTIONAL

CATHODE

IEC-61643-321

11.1 V

SILICON

12.3 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PTVS7V5U1UPA

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

3000 W

AVALANCHE

1

SMALL OUTLINE

7.5 V

150 Cel

-55 Cel

S-PDSO-N3

UNIDIRECTIONAL

CATHODE

IEC-61643-321

8.33 V

SILICON

9.21 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PTVS20VZ1USK

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

2000 W

23.8 V

AVALANCHE

.1 uA

1

20 V

CHIP CARRIER

20 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

CATHODE

48.3 V

22.2 V

SILICON

25.4 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PESD9X7.0L

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

AVALANCHE

1

CHIP CARRIER

7 V

150 Cel

TIN

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

7.5 V

e3

SILICON

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.