NO LEAD Transient Suppression Devices 1,724

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

PESD5V0F1BRSF,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

28 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

6 V

SILICON

10 V

IEC-60134; IEC-61000-4-2, 4-5

PESD3V3V4UF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

16 W

5.6 V

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

Tin (Sn)

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

MO-252

11 V

5.3 V

e3

30

260

SILICON

5.9 V

PESD5V0U4BF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

6.5 V

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PBCC-N6

1

BIDIRECTIONAL

Not Qualified

MO-252

5.5 V

e3

30

260

SILICON

9.5 V

PESD5V0V1BCSF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

8 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

R-XBCC-N2

BIDIRECTIONAL

6 V

SILICON

10 V

PESD5V0L4UF-T1

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

6.8 V

AVALANCHE

.025 uA

4

5 V

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-65 Cel

R-PBCC-N6

UNIDIRECTIONAL

LOW CAPACITANCE

MO-252

13 V

6.46 V

SILICON

7.14 V

AEC-Q101

PESD9V0V4UK,132

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

28 W

12 V

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

9 V

150 Cel

S-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

19 V

11.4 V

30

260

SILICON

12.7 V

PESD3V3S4UF,132

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

110 W

AVALANCHE

4

CHIP CARRIER

3.3 V

R-PBCC-N6

UNIDIRECTIONAL

5.32 V

SILICON

5.88 V

PESD3V3L4UF-T1

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

5.6 V

AVALANCHE

.3 uA

4

3.3 V

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

-65 Cel

R-PBCC-N6

UNIDIRECTIONAL

LOW CAPACITANCE

MO-252

12 V

5.32 V

SILICON

5.88 V

AEC-Q101

PESD5V0U1BL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

7 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PDSO-N2

1

BIDIRECTIONAL

Not Qualified

5.5 V

e3

30

260

SILICON

9.5 V

PESD5V0V2BMB

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N3

BIDIRECTIONAL

CATHODE

IEC-61643-321

5.5 V

SILICON

7.8 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD5V0F5UF,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

8.8 V

AVALANCHE

5

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-55 Cel

TIN

R-PBCC-N6

1

UNIDIRECTIONAL

LOW CAPACITANCE, IEC-61643-321

15 V

7.5 V

e3

30

260

SILICON

10 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD5V0V4UK

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

25 W

AVALANCHE

4

CHIP CARRIER

5 V

150 Cel

PURE TIN

S-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

6.47 V

SILICON

7.14 V

PESD5V0R1BSF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

6 V

SILICON

IEC-60134

PESD5V0U1UL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

e3

30

260

SILICON

PESD3V3V4UK,132

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

25 W

5.6 V

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

S-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

9.5 V

5.3 V

30

260

SILICON

5.9 V

IP4286CZ6-TBF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

AVALANCHE

2

CHIP CARRIER

150 Cel

TIN

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

ULTRA LOW CAPACITANCE

MO-252

6 V

e3

SILICON

9 V

PESD5V0X2UMB

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

5 V

150 Cel

-65 Cel

R-PBCC-N3

UNIDIRECTIONAL

ANODE

IEC-61643-321

7.5 V

SILICON

10 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD5V0X1BCSF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

IEC-61643-321

6 V

SILICON

IEC-60134; IEC-61000-4-2, 4-5

PESD12VV1BL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

290 W

AVALANCHE

1

CHIP CARRIER

12 V

150 Cel

-55 Cel

TIN

R-PBCC-N2

1

BIDIRECTIONAL

14.6 V

e3

SILICON

16.8 V

AEC-Q101; IEC-60134

PESD5V0S1BSF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

100 W

AVALANCHE

1

CHIP CARRIER

5 V

R-PBCC-N2

BIDIRECTIONAL

Not Qualified

6 V

SILICON

10 V

PESD3V3L5UF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

25 W

5.6 V

AVALANCHE

.3 uA

5

3.3 V

BOTTOM

Transient Suppressors

3.3 V

150 Cel

-65 Cel

Tin (Sn)

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

MO-252

12 V

5.3 V

e3

30

260

SILICON

5.9 V

AEC-Q101

PESD5V0X1BCL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

TIN

R-PBCC-N2

1

BIDIRECTIONAL

IEC-61643-321

8.1 V

e3

SILICON

12.3 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

IP4282CZ6

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

PURE TIN

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

MO-252

6 V

SILICON

9 V

PESD3V3L5UK

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

28 W

AVALANCHE

5

CHIP CARRIER

3.3 V

150 Cel

PURE TIN

S-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

5.3 V

SILICON

5.9 V

PESD3V3L4UF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

5.6 V

AVALANCHE

.3 uA

4

3.3 V

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

-65 Cel

Tin (Sn)

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

MO-252

12 V

5.32 V

e3

30

260

SILICON

5.88 V

AEC-Q101

IP4294CZ10-TBR

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

3 V

85 Cel

-40 Cel

R-PDSO-N10

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

SILICON

IEC-60134; IEC-61000-4-2, 4-5

PESD5V0L4UF-T4

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

6.8 V

AVALANCHE

.025 uA

4

5 V

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-65 Cel

R-PBCC-N6

UNIDIRECTIONAL

LOW CAPACITANCE

MO-252

13 V

6.46 V

SILICON

7.14 V

AEC-Q101

PESD5V0X2UAMB

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

5 V

150 Cel

-65 Cel

TIN

R-PBCC-N3

1

UNIDIRECTIONAL

ANODE

IEC-61643-321

7.5 V

e3

30

260

SILICON

10 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD3V3S4UF,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

110 W

5.6 V

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

TIN

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

11 V

5.32 V

e3

30

260

SILICON

5.88 V

PESD3V3U1UL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5.6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

Tin (Sn)

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

e3

30

260

SILICON

PESD1LVDS

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

5.5 V

R-PDSO-N10

1

UNIDIRECTIONAL

6 V

SILICON

9 V

PESD5V0C1USF,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

IEC-61643-321

5.5 V

SILICON

IEC-60134; IEC-61000-4-2, 4-5

PESD5V0S1USF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

35 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

IEC-61643-321

6 V

SILICON

8 V

IEC-60134; IEC-61000-4-2, 4-5

PESD5V0C1BSF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

IEC-61643-321

6 V

SILICON

IEC-60134; IEC-61000-4-2, 4-5

PESD5V0F5UF/T1

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

AVALANCHE

5

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N6

UNIDIRECTIONAL

LOW CAPACITANCE, IEC-61643-321

7.5 V

SILICON

10 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD5V0V1BSF,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

8 W

AVALANCHE

1

CHIP CARRIER

5 V

R-PBCC-N2

BIDIRECTIONAL

Not Qualified

6 V

SILICON

10 V

PESD3V3S1UL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

5.6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

Tin (Sn)

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

5.2 V

e3

30

260

SILICON

6 V

PESD5V0F1BSF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

28 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

6 V

SILICON

10 V

IEC-60134; IEC-61000-4-2, 4-5

PESD3V3V4UF,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

16 W

5.6 V

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

TIN

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

MO-252

11 V

5.3 V

e3

30

260

SILICON

5.9 V

SP001213176

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.3 V

125 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD0P8RFL-E6327

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

50 V

150 Cel

-55 Cel

TIN GOLD

R-XBCC-N4

1

UNIDIRECTIONAL

12 V

e2

260

SILICON

15 V

ESD200-B1-CSP0201E6327

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-40 Cel

R-XBCC-N2

BIDIRECTIONAL

6 V

SILICON

10 V

ESD231-B1-W0201E6327

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

132 W

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

BIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD251B1W0201E6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

72 W

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

6.6 V

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD108-B1-CSP0201

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

18000 W

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

18.5 V

IEC-61000-4-5

ESD8V0L1B02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

8.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

14 V

125 Cel

-55 Cel

R-XBCC-N2

BIDIRECTIONAL

21 V

8.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101

ESD18VU1B-02LS

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

18.5 V

85 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD5V0H1U-02LS

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

200 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

MATTE TIN

R-XBCC-N2

UNIDIRECTIONAL

Not Qualified

40 V

e3

SILICON

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.