BOTTOM Transient Suppression Devices 1,197

Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

PUSB3BB2DF

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 3 ELEMENTS

7.4 V

AVALANCHE

.05 uA

1

4 V

CHIP CARRIER

4 V

125 Cel

-40 Cel

R-PBCC-N3

1

BIDIRECTIONAL

6.2 V

30

260

SILICON

IEC-60134; IEC-61000-4-2, 4-5

PESD1V2Y1BSF

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.001 uA

1

1.2 V

CHIP CARRIER

1.2 V

R-PBCC-N2

1

BIDIRECTIONAL

30

260

SILICON

PESD5V0F1BSFZ

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

28 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

6 V

SILICON

10 V

IEC-60134; IEC-61000-4-2, 4-5

PESD4V0W1BCSF

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.8 V

AVALANCHE

.05 uA

1

4 V

CHIP CARRIER

4 V

125 Cel

-40 Cel

R-PBCC-N2

1

BIDIRECTIONAL

5.1 V

4.2 V

30

260

SILICON

8 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PESD3V3U1BCSFYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

4.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

8 V

IEC-60134; IEC-61000-4-2; IEC-61000-4-5

PESD7V0L1BSL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

8 V

AVALANCHE

.1 uA

1

7 V

CHIP CARRIER

7 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

9.6 V

7.5 V

SILICON

9 V

IEC-60134; IEC-61000-4-2, 4-5

PESD5V0L1BSL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.5 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

11.3 V

5.6 V

SILICON

8.4 V

IEC-60134; IEC-61000-4-2, 4-5

PESD4V0Z1BCSF

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.8 V

AVALANCHE

.05 uA

1

4 V

CHIP CARRIER

4 V

125 Cel

-40 Cel

R-PBCC-N2

1

BIDIRECTIONAL

4.8 V

30

260

SILICON

IEC-60134; IEC-61000-4-2, 4-5

PESD7V0C1BSFYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

9 V

AVALANCHE

.05 uA

1

7 V

CHIP CARRIER

7 V

125 Cel

-40 Cel

R-PBCC-N2

1

BIDIRECTIONAL

5.5 V

7.5 V

30

260

SILICON

11 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PESD24VF1BL,315

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

24 V

150 Cel

-55 Cel

Tin (Sn)

R-PBCC-N2

1

BIDIRECTIONAL

IEC-61643-321

24.5 V

e3

30

260

SILICON

31.5 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD7V0H1BSF

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

9 V

AVALANCHE

.05 uA

1

7 V

CHIP CARRIER

7 V

125 Cel

-40 Cel

R-PBCC-N2

1

BIDIRECTIONAL

5 V

7.5 V

30

260

SILICON

11 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PESD12VA-SF

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

15.1 V

AVALANCHE

.05 uA

1

12 V

CHIP CARRIER

12 V

150 Cel

-55 Cel

R-PBCC-N2

1

BIDIRECTIONAL

30 V

14 V

30

260

SILICON

16.4 V

IEC-60134; IEC-61000-4-2, 4-5

PESD5V0V1BDSFZ

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

6 V

SILICON

10 V

IEC-60134; IEC-61000-4-2, 4-5

PESD5V0G1BL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.8 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

TIN

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

13 V

5.8 V

e3

30

260

SILICON

7.8 V

IEC-60134; IEC-61000-4-2, 4-5

PESD3V3C1BSF,315

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

R-PBCC-N2

1

BIDIRECTIONAL

IEC-61643-321

6 V

30

260

SILICON

IEC-60134; IEC-61000-4-2, 4-5

PESD18VF1BL-Q

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

22 V

AVALANCHE

.03 uA

1

18 V

CHIP CARRIER

18 V

150 Cel

-55 Cel

TIN

R-PBCC-N2

1

BIDIRECTIONAL

.28 pF

IEC-61643-321

17 V

19 V

e3

30

260

SILICON

24 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD2V8Y1BSF

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

2.8 V

R-PBCC-N2

BIDIRECTIONAL

SILICON

IEC-61000-4-2, 4-4

PESD15VW1UCSF

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

15 V

R-PBCC-N2

UNIDIRECTIONAL

SILICON

IEC-61000-4-2,4-5

PESD4V0X2UM

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

6.8 V

AVALANCHE

.1 uA

2

4 V

CHIP CARRIER

4 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N3

1

UNIDIRECTIONAL

ANODE

4 V

e4

30

260

SILICON

IEC-60134; IEC-61000-4-2, 4-4, 4-5

PESD5V0F1BL-Q

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

8 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5.5 V

125 Cel

-40 Cel

TIN

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

15 V

6 V

e3

30

260

SILICON

10 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD5V5V1BCSF

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.05 uA

1

5.5 V

SMALL OUTLINE

5.5 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

8.1 V

SILICON

IEC-60134; IEC-61000-4-2, 4-5

PESD3V3HS2-SF

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.6 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

4 V

SILICON

IEC-60134; IEC-61000-4-2, 4-5

PESD5V0X1BL-Q

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

TIN

R-PBCC-N2

1

BIDIRECTIONAL

MIL-STD-883

6 V

e3

30

260

SILICON

9.5 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD5V0X2UMB-Q

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

8.8 V

AVALANCHE

.01 uA

2

5 V

CHIP CARRIER

5 V

150 Cel

-65 Cel

TIN

R-PBCC-N3

1

UNIDIRECTIONAL

ANODE

MIL-STD-883

14 V

7.5 V

e3

30

260

SILICON

10 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD5V0S1BL-Q

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

130 W

7.5 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-65 Cel

TIN

R-PBCC-N2

1

BIDIRECTIONAL

14 V

5.5 V

e3

30

260

SILICON

9.5 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD6V3S1UL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.6 V

AVALANCHE

.3 uA

1

6.3 V

CHIP CARRIER

6.3 V

150 Cel

-55 Cel

TIN

R-PBCC-N2

1

UNIDIRECTIONAL

14.2 V

7.1 V

e3

30

260

SILICON

7.9 V

IEC-60134; IEC-61000-4-2, 4-5

PESD24VS1UL-Q

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

27 V

AVALANCHE

.05 uA

1

24 V

CHIP CARRIER

24 V

150 Cel

-55 Cel

TIN

R-PBCC-N2

1

UNIDIRECTIONAL

MIL-STD-883

70 V

26.5 V

e3

30

260

SILICON

27.5 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

L02U5V0CQ2C

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20 W

7.5 V

AVALANCHE

1 uA

1

5 V

CHIP CARRIER

5 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

11 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9 V

IEC-61000-4-2

D8V0L1B2LPQ-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

68 W

AVALANCHE

1

CHIP CARRIER

8 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

8.5 V

e4

30

260

SILICON

12 V

AEC-Q101; IEC-61000-4-2

D7V0X1B2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

7 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

8 V

e3

260

SILICON

IEC-61000-4-2

D24V0LA1B2LPQ-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

230 W

29 V

AVALANCHE

.1 uA

1

24 V

CHIP CARRIER

24 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

BIDIRECTIONAL

.25 W

34.2 V

25 V

e4

SILICON

33 V

AEC-Q101; IATF 16949; IEC-61000-4-2; MIL-STD-202

L03ESD5V0CQ2

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

7.5 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

105 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

15 V

5.5 V

SILICON

9.5 V

IEC-61000-4-2

D15V0S1U2LP1608A-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20 V

AVALANCHE

.1 uA

1

15 V

CHIP CARRIER

15 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

UNIDIRECTIONAL

ANODE

.3 W

35 V

17 V

e4

SILICON

23 V

IEC-61000-4-2

D6V3H1US2LP4-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

500 W

7.95 V

AVALANCHE

.5 uA

1

6.3 V

CHIP CARRIER

6.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

UNIDIRECTIONAL

.25 W

10 V

6.4 V

e4

SILICON

9.5 V

IEC-61000-4-2, 4-5; MIL-STD-202

D8V0X1B2LPQ-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

12 V

AVALANCHE

1 uA

1

8 V

CHIP CARRIER

8 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

BIDIRECTIONAL

.35 W

21 V

9.5 V

e4

260

SILICON

14.5 V

IEC-61000-4-2; MIL-STD-202

D2V5L1BS2LP4-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

90 W

AVALANCHE

1 uA

1

2.5 V

CHIP CARRIER

2.5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

BIDIRECTIONAL

.25 W

6 V

2.6 V

e4

260

SILICON

IEC-61000-4-2, 4-5; MIL-STD-202

D18V0X1B2LPQ-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

22.95 V

AVALANCHE

1 uA

1

18 V

CHIP CARRIER

18 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

.25 W

36 V

19.7 V

SILICON

26.2 V

AEC-Q101; IATF 16949; IEC-61000-4-2

DUSBULC6-CSP4-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

70 W

AVALANCHE

1

GRID ARRAY

3 V

150 Cel

-55 Cel

TIN SILVER COPPER

S-PBGA-B4

UNIDIRECTIONAL

6 V

e1

260

SILICON

9 V

IEC-61000-4-2

D10V0H1U2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

CHIP CARRIER

10 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

11.5 V

e4

260

SILICON

IEC-61000-4-2

D8V0H1B2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

350 W

AVALANCHE

1

CHIP CARRIER

8 V

150 Cel

-65 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

8.5 V

e4

30

260

SILICON

12 V

IEC-61000-4-2

D6V3M1U2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

120 W

7.5 V

AVALANCHE

1 uA

1

6.3 V

CHIP CARRIER

6.3 V

150 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

UNIDIRECTIONAL

.25 W

12 V

6.5 V

e3

260

SILICON

8.5 V

IEC-61000-4-2, 4-5; MIL-STD-202

L09ESD3V3CE2

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

90 W

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SILICON

D26V0S1U2LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4800 W

AVALANCHE

1

CHIP CARRIER

26 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.5 W

28 V

e4

30

260

SILICON

31.9 V

IEC-61000-4-2

D8V0X1B2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

8 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

BIDIRECTIONAL

.25 W

10 V

e4

260

SILICON

IEC-61000-4-2

D8V0L1B2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

66 W

10.25 V

AVALANCHE

.05 uA

1

8 V

CHIP CARRIER

8 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

16.5 V

8.5 V

e3

30

260

SILICON

12 V

IEC-61000-4-2

D15V0H1U2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

17.5 V

AVALANCHE

.1 uA

1

15 V

CHIP CARRIER

15 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

27 V

16 V

e4

30

260

SILICON

19 V

IEC-61000-4-2

D36V0L1B2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

120 W

AVALANCHE

1 uA

1

36 V

CHIP CARRIER

36 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

BIDIRECTIONAL

.25 W

60 V

40 V

e4

260

SILICON

IEC-61000-4-2, 4-5; MIL-STD-202

D7V0H1U2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

270 W

8.5 V

AVALANCHE

1 uA

1

7 V

CHIP CARRIER

7 V

150 Cel

-65 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

14.4 V

7.5 V

e4

30

260

SILICON

9.5 V

IEC-61000-4-2; MIL-STD-202

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.