BOTTOM Transient Suppression Devices 1,197

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

D6V3E1U2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

CHIP CARRIER

6.3 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

6.5 V

e4

30

260

SILICON

9 V

IEC-61000-4-2

D24V0L1B2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

90 W

AVALANCHE

1

CHIP CARRIER

24 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

HIGH RELIABILITY

26 V

e4

30

260

SILICON

32 V

AEC-Q101; IEC-61000-4-2

D6V3H1U2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

375 W

AVALANCHE

1

CHIP CARRIER

6.3 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

6.5 V

e4

260

SILICON

9 V

IEC-61000-4-2

D7V0M1U2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

90 W

AVALANCHE

1

CHIP CARRIER

7 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

7.5 V

e3

30

260

SILICON

IEC-61000-4-2, 4-5

D7V9S1U2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

8.5 V

AVALANCHE

1 uA

1

7.9 V

CHIP CARRIER

7.9 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

UNIDIRECTIONAL

.25 W

13 V

8 V

e4

260

SILICON

9 V

IEC-61000-4-2, 4-5

D7V9H1U2LP1610-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1000 W

AVALANCHE

1

CHIP CARRIER

7.9 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.3 W

8.2 V

e4

30

260

SILICON

9 V

IEC-61000-4-2

DT2042-01CSP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

50 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-65 Cel

NICKEL GOLD

R-XBCC-N2

1

UNIDIRECTIONAL

.25 W

6 V

e4

30

260

SILICON

10 V

IEC-61000-4-2; IEC-61000-4-4

L06ESDU5V0CE2

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

60 W

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

L03ESDL5V0CQ2

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

7.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

-55 Cel

Matte Tin (Sn)

R-PBCC-N2

BIDIRECTIONAL

15 V

5.5 V

e3

SILICON

9.5 V

D15V0M1U2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

75 W

AVALANCHE

1

CHIP CARRIER

15 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

UNIDIRECTIONAL

.28 W

15.5 V

e3

260

SILICON

IEC-61000-4-2, 4-5

L05ESDU5V0CE2

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

50 W

6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

12.5 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-5

D8V0L1B2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

68 W

AVALANCHE

1

CHIP CARRIER

8 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

8.5 V

e3

30

260

SILICON

12 V

IEC-61000-4-2; IEC-61000-4-5

D2V5H1BS2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

595 W

AVALANCHE

1 uA

1

2.5 V

CHIP CARRIER

2.5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

BIDIRECTIONAL

.25 W

7 V

2.6 V

e4

260

SILICON

IEC-61000-4-2,4-5

D34V0H1U2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

580 W

AVALANCHE

1

CHIP CARRIER

34 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

35 V

e4

30

260

SILICON

41 V

IEC-61000-4-2

D20V0M2U3LP4-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

300 W

22.5 V

AVALANCHE

.1 uA

2

20 V

CHIP CARRIER

20 V

150 Cel

-55 Cel

R-PBCC-N3

UNIDIRECTIONAL

ANODE

.25 W

43 V

21 V

SILICON

24 V

IEC-61000-4-2

T5V0DLP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

25 W

AVALANCHE

2

CHIP CARRIER

5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N3

1

UNIDIRECTIONAL

ANODE

.385 W

6.1 V

e4

30

260

SILICON

8 V

D15V0H1U2LP16-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

SQUARE

PLASTIC/EPOXY

SINGLE

2250 W

AVALANCHE

1

CHIP CARRIER

15 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

S-PBCC-N2

1

UNIDIRECTIONAL

.3 W

15.5 V

e4

260

SILICON

IEC-61000-4-2

L13ESD5V0CE2

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

130 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

BIDIRECTIONAL

Not Qualified

5.5 V

e3

SILICON

9.5 V

D15V0X1B2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

15 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

16.5 V

e4

260

SILICON

IEC-61000-4-2

D6V3H1U2LP16-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

6.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

UNIDIRECTIONAL

.5 W

6.5 V

e4

260

SILICON

9 V

D36V0S1U2LP1610Q-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

40.5 V

AVALANCHE

.2 uA

1

36 V

CHIP CARRIER

36 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

UNIDIRECTIONAL

.3 W

165 pF

59 V

37 V

e4

260

SILICON

44 V

AEC-Q101; IATF 16949; IEC-61000-4-2

DUSBULC6-CSP4-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

70 W

AVALANCHE

1

GRID ARRAY

3 V

150 Cel

-55 Cel

TIN SILVER COPPER

S-PBGA-B4

UNIDIRECTIONAL

6 V

e1

260

SILICON

9 V

IEC-61000-4-2

D18V0L1B2LPQ-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

68 W

23 V

AVALANCHE

.1 uA

1

20 V

CHIP CARRIER

20 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

HIGH RELIABILITY

34 V

21 V

e4

260

SILICON

25 V

AEC-Q101; IEC-61000-4-2, 4-5

D26V0H1U2LP16-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

2200 W

AVALANCHE

1

CHIP CARRIER

26 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.3 W

28 V

e4

260

SILICON

31.9 V

IEC-61000-4-2

D18V0L1B2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

68 W

AVALANCHE

1

CHIP CARRIER

18 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

21 V

e4

30

260

SILICON

25 V

AEC-Q101; IEC-61000-4-5

L15ESD12VE2

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

AVALANCHE

1

CHIP CARRIER

12 V

125 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

UNIDIRECTIONAL

Not Qualified

14.2 V

e3

SILICON

15.8 V

D6V3H1U2LP4-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

375 W

AVALANCHE

1

CHIP CARRIER

6.3 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

6.5 V

e4

30

260

SILICON

9 V

IEC-61000-4-2

D22V0S1U2LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

SQUARE

PLASTIC/EPOXY

SINGLE

4000 W

AVALANCHE

1

CHIP CARRIER

22 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

S-PBCC-N2

1

UNIDIRECTIONAL

.5 W

24 V

e4

260

SILICON

IEC-61000-4-2

DT1240-02LP10-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

55 W

AVALANCHE

2

CHIP CARRIER

5.5 V

85 Cel

-55 Cel

NICKEL GOLD

R-PBCC-N3

1

UNIDIRECTIONAL

ANODE

.5 W

PD-NOM

6 V

e4

30

260

SILICON

IEC-61000-4-2; IEC-61000-4-5

D4V5H1U2LP1610-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

4.5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.5 W

5.5 V

e4

260

SILICON

8 V

IEC-61000-4-2

D14V0H1U2LP1610-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1120 W

AVALANCHE

1

CHIP CARRIER

14 V

150 Cel

-55 Cel

NICKEL GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.3 W

15 V

e4

260

SILICON

IEC-61000-4-2

D20V0L1B2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

80 W

23 V

AVALANCHE

.1 uA

1

20 V

CHIP CARRIER

20 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

BIDIRECTIONAL

.25 W

32 V

21 V

e3

260

SILICON

25 V

IEC-61000-4-2

L03L5V0CE3

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

30 W

AVALANCHE

2

CHIP CARRIER

5 V

105 Cel

-55 Cel

R-PBCC-N3

BIDIRECTIONAL

ANODE

5.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9.5 V

IEC-61000-4-2, 4-5

D26V0H1U2LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

SQUARE

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

CHIP CARRIER

26 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

S-PBCC-N2

1

UNIDIRECTIONAL

.5 W

28 V

e4

30

260

SILICON

31.9 V

L15ESD24VE2

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

AVALANCHE

1

CHIP CARRIER

24 V

125 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

UNIDIRECTIONAL

Not Qualified

26.5 V

e3

SILICON

29.5 V

D4V5H1BS2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

528 W

5.9 V

AVALANCHE

.5 uA

1

4.5 V

CHIP CARRIER

4.5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

BIDIRECTIONAL

.25 W

7 V

4.8 V

e4

260

SILICON

7 V

IEC-61000-4-2,4-5; MIL-STD-202

L03ESDL5V0CE2

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

7.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

15 V

5.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9.5 V

D5V0F1U2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

6 V

e3

260

SILICON

D1213A-01LPQ-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.95 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

HIGH RELIABILITY

10 V

6 V

e4

30

260

SILICON

AEC-Q101; IEC-61000-4-2

D5V0H1U2LP1610-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.5 W

5.5 V

e4

260

SILICON

IEC-61000-4-2

P6KE56A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

WIRE

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

GRID ARRAY

47.8 V

MATTE TIN

O-PALF-W2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

5 W

DO-15

53.2 V

e3

SILICON

58.8 V

P6KE91CA-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

WIRE

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

GRID ARRAY

77.8 V

MATTE TIN

O-PALF-W2

1

BIDIRECTIONAL

ISOLATED

Not Qualified

5 W

DO-15

86.5 V

e3

SILICON

95.5 V

TPD6V8LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

85 W

6.8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

19 V

6.4 V

e4

30

260

SILICON

7.2 V

P6KE30CA-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

WIRE

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

CHIP CARRIER

25.6 V

MATTE TIN

O-PALF-W2

1

BIDIRECTIONAL

ISOLATED

Not Qualified

5 W

DO-15

28.5 V

e3

SILICON

31.5 V

D12V0HA1U2SLP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

630 W

15 V

AVALANCHE

.1 uA

1

12 V

CHIP CARRIER

12 V

150 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

UNIDIRECTIONAL

.25 W

21 V

13.5 V

e3

260

SILICON

16.5 V

IEC-61000-4-2,4-5

DESD18VF1BLP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

SQUARE

PLASTIC/EPOXY

SINGLE

20 W

AVALANCHE

1

CHIP CARRIER

18 V

150 Cel

-65 Cel

MATTE TIN

S-PBCC-N2

BIDIRECTIONAL

.25 W

19 V

e3

260

SILICON

35 V

IEC-61000-4-2

P6KE18CA-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

WIRE

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

GRID ARRAY

15.3 V

MATTE TIN

O-PALF-W2

1

BIDIRECTIONAL

ISOLATED

Not Qualified

5 W

LOW CAPACITANCE

DO-15

17.1 V

e3

SILICON

18.9 V

P6KE20CA-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

WIRE

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

CHIP CARRIER

17.1 V

MATTE TIN

O-PALF-W2

1

BIDIRECTIONAL

ISOLATED

Not Qualified

5 W

DO-15

19 V

e3

SILICON

21 V

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.