BOTTOM Transient Suppression Devices 1,197

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

TPD1E10B06DPYR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

90 W

6 V

AVALANCHE

.1 uA

1

CHIP CARRIER

Transient Suppressors

5.5 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

10 V

6 V

e4

NOT SPECIFIED

260

SILICON

IEC-61000-4-2, 4-5

TPD1E05U06DPYR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

40 W

7.5 V

AVALANCHE

.01 uA

1

2.5 V

CHIP CARRIER

Transient Suppressors

5.5 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

18 V

6.5 V

e4

NOT SPECIFIED

260

SILICON

8.5 V

IEC-61000-4-2, 4-4, 4-5

MAX3204EETT-T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

6

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

8

GRID ARRAY

Other Diodes

150 Cel

-40 Cel

TIN LEAD

S-PBGA-B6

1

UNIDIRECTIONAL

Not Qualified

1.951 W

MO-229WEEA

e0

SILICON

TPD1E05U06DPYT

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

40 W

7.5 V

AVALANCHE

.01 uA

1

2.5 V

CHIP CARRIER

Transient Suppressors

5.5 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

18 V

6.5 V

e4

NOT SPECIFIED

260

SILICON

8.5 V

IEC-61000-4-2, 4-4, 4-5

PESD5V0S1BL,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

130 W

7.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

TIN

R-PBCC-N2

1

BIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

14 V

5.5 V

e3

30

260

SILICON

9.5 V

TPD1E10B06DPYT

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

90 W

6 V

AVALANCHE

.1 uA

1

CHIP CARRIER

Transient Suppressors

5.5 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

10 V

6 V

e4

NOT SPECIFIED

260

SILICON

IEC-61000-4-2, 4-5

ESDAXLC6-1BT2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

40 W

9 V

AVALANCHE

.05 uA

1

3 V

CHIP CARRIER

Transient Suppressors

3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

17 V

6 V

e4

30

260

SILICON

11 V

IEC-61000-4-2

PESD5V0S1BL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

130 W

7.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PBCC-N2

1

BIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

14 V

5.5 V

e3

30

260

SILICON

9.5 V

ESD101B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

AVALANCHE

.02 uA

1

5.5 V

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

30 V

e4

40

260

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD112B102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.3 V

125 Cel

-55 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

7 V

e4

260

SILICON

ESD9L1P8

Diotec Semiconductor Ag

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

80 W

AVALANCHE

.05 uA

1

1.8 V

CHIP CARRIER

1.8 V

125 Cel

-50 Cel

R-PBCC-N2

UNIDIRECTIONAL

7.5 V

2.2 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

ESD8472MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.3 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

20 V

7 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

12 V

IEC-61000-4-2, 4-5

RF2945-000

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

7 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

e4

10

260

SILICON

IEC-61000-4-2; UL RECOGNIZED

SPHV36-01ETG-C

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

200 W

40 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

36 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

MO-236

65 V

40 V

e4

30

260

SILICON

AEC-Q101

ESD108B1CSP0201XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

18000 W

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

SILICON

18.5 V

IEC-61000-4-5

ESDAVLC8-1BM2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

30 W

17 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

Not Qualified

8.5 V

e3

30

260

SILICON

IEC-61000-4-2

ESDA7P60-1U1M

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

700 W

6.8 V

AVALANCHE

.2 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N2

1

UNIDIRECTIONAL

11.6 V

6.4 V

SILICON

7.2 V

IEC-61000-4-2

ESDALC5-1BT2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

13 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

5 V

e4

30

260

SILICON

8 V

SZESD8472MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.3 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

20 V

7 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

12 V

AEC-Q101; IEC-61000-4-2

TPD1E10B09DPYR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

90 W

9.5 V

AVALANCHE

.1 uA

1

CHIP CARRIER

Transient Suppressors

9 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.162 W

13 V

9.5 V

e4

NOT SPECIFIED

260

SILICON

IEC-61000-4-2, 4-5

ESD101B102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

e4

SILICON

ESDA25P35-1U1M

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1400 W

AVALANCHE

1

CHIP CARRIER

22 V

150 Cel

-55 Cel

R-PBCC-N2

1

UNIDIRECTIONAL

23.3 V

SILICON

25.8 V

IEC-61000-4-2

ESD0P4RFLE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

50 V

150 Cel

-55 Cel

GOLD

R-XBCC-N4

1

UNIDIRECTIONAL

6 V

e4

SILICON

9 V

PRTR5V0U2F,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

ZENER

1

CHIP CARRIER

Transient Suppressors

5.5 V

150 Cel

TIN

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

MO-252

6 V

e3

30

260

SILICON

9 V

PESD12VV1BL,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

290 W

15.7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

12 V

150 Cel

-55 Cel

TIN

R-PBCC-N2

1

BIDIRECTIONAL

38 V

14.6 V

e3

30

260

SILICON

16.8 V

AEC-Q101; IEC-60134

ESD200B1CSP0201XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-40 Cel

R-XBCC-N2

1

BIDIRECTIONAL

6 V

SILICON

10 V

ESD103B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

15 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

e4

SILICON

TPD1E04U04DPYR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

19 W

6.2 V

AVALANCHE

.01 uA

1

CHIP CARRIER

3.6 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

5.3 V

4.5 V

e4

NOT SPECIFIED

260

SILICON

7.5 V

IEC-61000-4-2, 4-4, 4-5

ESDAXLC6-1MY2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

12 W

6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

125 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

6 V

e4

30

260

SILICON

ESD5101FCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

5 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

6.5 V

3.68 V

30

260

SILICON

6.5 V

IEC-61000-4-2

RF2943-000

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

7 V

125 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

40

260

SILICON

IEC-61000-4-2; UL RECOGNIZED

CM1230-02CP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

GRID ARRAY

Transient Suppressors

TIN SILVER COPPER

S-PBGA-B4

1

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

9.8 V

e1

30

260

SILICON

ESDA15P60-1U1M

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1200 W

AVALANCHE

1

CHIP CARRIER

13.2 V

150 Cel

-55 Cel

NICKEL PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

13.6 V

e4

260

SILICON

IEC-61000-4-2

ESDALC6V1-1U2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20 W

7.05 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

125 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

e4

30

260

SILICON

ESD112B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.3 V

125 Cel

-55 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

7 V

e4

SILICON

SP3031-01ETG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

LOW CAPACITANCE

MO-236

7.5 V

6 V

40

260

SILICON

ESDAXLC6-1BT2Y

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

40 W

9 V

AVALANCHE

.05 uA

1

3 V

CHIP CARRIER

3 V

150 Cel

-55 Cel

R-PBCC-N2

1

BIDIRECTIONAL

37 V

6 V

SILICON

11 V

AEC-Q101; IEC-61000-4-2; ISO 7637-3; ISO 10605

ESDALC6V1-1M2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

50 W

6.65 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

3

UNIDIRECTIONAL

Not Qualified

6.1 V

e4

30

260

SILICON

7.2 V

ACPDQC3V3T-HF

Comchip Technology

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

180 W

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

GOLD

R-PBCC-N2

BIDIRECTIONAL

3.6 V

e4

30

260

SILICON

4.6 V

AEC-Q101; IEC-61000-4-2

RCLAMP0521PATCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

100 W

9.3 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

Not Qualified

25 V

6 V

e4

30

260

SILICON

11 V

ESDA14V2-4BF3

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

5

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

50 W

16.1 V

AVALANCHE

5

GRID ARRAY

Transient Suppressors

12 V

125 Cel

S-PBGA-B5

BIDIRECTIONAL

Not Qualified

14.2 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

18 V

UCLAMP0511P.TCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

SINGLE

170 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-CBCC-N2

1

BIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

14 V

6 V

e4

260

SILICON

ESD102U102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

.05 uA

1

3.3 V

CHIP CARRIER

Transient Suppressors

3.3 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

11 V

e4

SILICON

IEC-61000-4-2, 4-4, 4-5

UCLAMP0571P.TNT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

1500 W

7 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-XBCC-N2

1

UNIDIRECTIONAL

15 V

6 V

e4

260

SILICON

9 V

IEC-61000-4-2, 4-4, 4-5

SP1003-01ETG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

MATTE TIN

R-PBCC-N2

UNIDIRECTIONAL

Not Qualified

12 V

e3

40

260

SILICON

STN061050BL40

Eaton Corporation

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

100 W

8 V

AVALANCHE

1 uA

1

5 V

CHIP CARRIER

5 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

23 V

6 V

SILICON

10 V

ESD231B1W0201E6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

132 W

AVALANCHE

.02 uA

1

5.5 V

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

10 V

SILICON

IEC-61000-4-2, 4-4, 4-5

SESD0402X1UN-0020-090

TE Connectivity

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

9 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

7 V

125 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

LOW CAPACITANCE

9.2 V

260

SILICON

AEC-Q101

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.