BOTTOM Transient Suppression Devices 1,197

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

SESD5481MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.85 V

AVALANCHE

1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

23 V

5.7 V

e4

30

260

SILICON

8 V

IEC-61000-4-2, 4-4, 4-5

ESD131B1W0201E6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

26 W

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

6 V

SILICON

10.5 V

IEC-61000-4-2, 4-4, 4-5

ESD7551N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6 V

AVALANCHE

.05 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE

13 V

5 V

e4

30

260

SILICON

7.5 V

IEC-61000-4-2, 4-5

DESD3V3S1BL-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

35 W

AVALANCHE

1

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

3.8 V

e4

30

260

SILICON

6.5 V

ESD105B102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.5 V

125 Cel

-55 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

22 V

e4

SILICON

14 V

STN161050U852

Eaton Corporation

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

2000 W

7 V

AVALANCHE

1 uA

1

5 V

CHIP CARRIER

5 V

125 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

17 V

6 V

SILICON

8 V

IEC-61000-4-2,4-5

SZESD7241N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

24 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

24.3 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

28 V

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

PESD5V0F1BL,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.5 V

125 Cel

TIN

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

15 V

6 V

e3

30

260

SILICON

10 V

STN101033B101

Eaton Corporation

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

100 W

3.3 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

11 V

3.6 V

SILICON

IEC-61000-4-2,4-5

ESD203B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

115 W

AVALANCHE

.05 uA

1

12 V

CHIP CARRIER

13.2 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

23 V

e4

SILICON

IEC-61000-4-2, 4-4, 4-5

SP3222-02ETG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

30 W

8 V

AVALANCHE

.1 uA

2

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

R-PBCC-N3

1

UNIDIRECTIONAL

ANODE

LOW CAPACITANCE

10 V

6.1 V

SILICON

9 V

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

UCLAMP3311T.TCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

40 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

8 V

e4

30

260

SILICON

PESD5V0X1BL,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

TIN

R-PBCC-N2

1

BIDIRECTIONAL

Not Qualified

6 V

e3

30

260

SILICON

9.5 V

ESD5V3U2U03LRHE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

UNSPECIFIED

COMMON ANODE, 2 ELEMENTS

6 V

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

5.3 V

125 Cel

-40 Cel

PALLADIUM GOLD

R-XBCC-N3

1

UNIDIRECTIONAL

CATHODE

12 V

6 V

e4

SILICON

UCLAMP0511T.TCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

8.2 V

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

5 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

15 V

6 V

e4

30

260

SILICON

9.5 V

ESD103B102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

15 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

e4

SILICON

ESD204B102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

14 V

150 Cel

-55 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

8.5 V

e4

SILICON

14 V

SP3021-01ETG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

MO-236

14.7 V

7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

STN061050B101

Eaton Corporation

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

80 W

5 V

AVALANCHE

100 uA

1

5 V

CHIP CARRIER

5 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

15 V

5.5 V

SILICON

IEC-61000-4-2,4-4,4-5

PESD3V3S1UL,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

5.6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

TIN

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

20 V

5.2 V

e3

30

260

SILICON

6 V

ESDA7P120-1U1M

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1400 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

R-PBCC-N2

1

UNIDIRECTIONAL

6.4 V

SILICON

IEC-61000-4-2

PESD9X7.0L,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

7 V

150 Cel

MATTE TIN

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

18 V

7.5 V

e3

30

260

SILICON

ESDALC5-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

28 W

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

5.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC61000-4-2

PESD5V0C1BSFYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

TIN

R-PBCC-N2

1

BIDIRECTIONAL

IEC-61643-321

6 V

e3

30

260

SILICON

IEC-60134; IEC-61000-4-2, 4-5

UCLAMP0501P.TCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

200 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

12.5 V

6 V

e4

260

SILICON

IEC-61000-4-2, 4-4

RCLAMP3521P.TNT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

50 W

6.7 V

AVALANCHE

.05 uA

1

3.5 V

CHIP CARRIER

3.5 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

13 V

4.5 V

e4

30

260

SILICON

8.5 V

IEC-61000-4-2, 4-4

ESD0P8RFLE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

50 V

150 Cel

-55 Cel

GOLD

R-XBCC-N4

1

UNIDIRECTIONAL

12 V

e4

SILICON

15 V

ESD5111FCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

5 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

MATTE TIN

R-XBCC-N2

1

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

6.5 V

3.68 V

e3

30

260

SILICON

6.5 V

IEC-61000-4-2

ESDA8P30-1T2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

7.3 V

AVALANCHE

.3 uA

2

6.3 V

CHIP CARRIER

6.3 V

150 Cel

-55 Cel

R-PBCC-N2

1

UNIDIRECTIONAL

12 V

6.9 V

SILICON

7.8 V

IEC61000-4-2

ESDU3121MXT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

15 V

AVALANCHE

.1 uA

1

12 V

CHIP CARRIER

12 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY

22 V

14.1 V

e4

30

260

SILICON

15.8 V

IEC-61000-4-2, 4-5

SP3205-01ETG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5.5 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

R-PBCC-N2

1

UNIDIRECTIONAL

LOW CAPACITANCE

12 V

3.6 V

40

260

SILICON

AEC-Q101, IEC-61000-4-2, 4-4, 4-5

ESD206B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

6 V

e4

SILICON

10 V

PESD5V0H1BSFYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

1

BIDIRECTIONAL

IEC-61643-321

6 V

30

260

SILICON

IEC-60134; IEC-61000-4-2, 4-5

PTVS4V5D1BLYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.05 uA

1

4.5 V

CHIP CARRIER

4.5 V

150 Cel

-55 Cel

R-PBCC-N2

1

BIDIRECTIONAL

13.2 V

4.7 V

30

260

SILICON

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

TPD2E007YFMRG4

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

4

YES

SQUARE

UNSPECIFIED

SINGLE

14 V

AVALANCHE

.05 uA

4

CHIP CARRIER

Transient Suppressors

13 V

85 Cel

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

S-XBCC-N4

1

BIDIRECTIONAL

Not Qualified

.27 W

14 V

14 V

e1

NOT SPECIFIED

260

SILICON

IEC-61000-4-2, 4-5

ESD206B102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

6 V

e4

SILICON

10 V

ESD241B1W0201E6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

25 W

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD119B1W01005E6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

35 W

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD202B1CSP01005XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

36 W

8 V

AVALANCHE

.1 uA

1

5.5 V

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

17 V

6 V

SILICON

10 V

IEC-61000-4-2, 4-4, 4-5

ESD207B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

3.65 V

e4

SILICON

D1213A-01LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

HIGH RELIABILITY

6 V

e4

30

260

SILICON

AEC-Q101

CPDQC5V0HE-HF

Comchip Technology

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

128 W

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

5.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-5

PESD5V0V1BL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

45 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

TIN

R-PBCC-N2

1

BIDIRECTIONAL

Not Qualified

5.8 V

e3

SILICON

7.8 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

UCLAMP0501T.TCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

SINGLE

6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-CBCC-N2

1

UNIDIRECTIONAL

Not Qualified

12.5 V

e4

260

SILICON

PESD3V3V1BLYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.01 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

R-PBCC-N2

1

BIDIRECTIONAL

10 V

4.5 V

30

260

SILICON

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD5V0H1BSF,315

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

1

BIDIRECTIONAL

IEC-61643-321

6 V

30

260

SILICON

IEC-60134; IEC-61000-4-2, 4-5

PESD5V0S1USF,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

35 W

7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

IEC-61643-321

9 V

6 V

SILICON

8 V

IEC-60134; IEC-61000-4-2, 4-5

ESD245B1W0201E6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

44 W

AVALANCHE

.03 uA

1

5.5 V

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

9 V

SILICON

IEC-61000-4-2, 4-4, 4-5

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.