BOTTOM Transient Suppression Devices 1,197

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

SP1103C-01UTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

720 W

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

3.4 V

40

260

SILICON

5 V

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

SP1220-01ETG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

250 W

7 V

AVALANCHE

1 uA

1

5.75 V

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

MO-236

11 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9.5 V

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

SPHV12-01ETG-C

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

200 W

13.3 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

12 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

MO-236

25 V

13.3 V

e4

30

260

SILICON

AEC-Q101

VS12VBA1HST15R

ROHM

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

70 W

AVALANCHE

1

CHIP CARRIER

12 V

150 Cel

NICKEL PALLADIUM GOLD

R-XBCC-N2

1

BIDIRECTIONAL

.1 W

HIGH RELIABILITY

12.5 V

e4

SILICON

15 V

IEC-61000-4-2

VS6V3UC1QST18R

ROHM

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

660 W

7.2 V

AVALANCHE

1 uA

1

6.3 V

CHIP CARRIER

6.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

UNIDIRECTIONAL

.2 W

HIGH RELIABILITY

11 V

6.7 V

e4

SILICON

7.7 V

IEC61000-4-2

DF2B6.8M1ACT

Toshiba

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

50 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

R-XBCC-N2

BIDIRECTIONAL

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

11 V

IEC-61000-4-5

VS3V3BB1EST15R

ROHM

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

45 W

AVALANCHE

1

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-XBCC-N2

BIDIRECTIONAL

.1 W

HIGH RELIABILITY

4 V

e4

10

260

SILICON

IEC-61000-4-2

VS3V3BT1FST27N

ROHM

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

21 W

AVALANCHE

1

CHIP CARRIER

3.3 V

150 Cel

NICKEL PALLADIUM GOLD

R-XBCC-N2

BIDIRECTIONAL

.1 W

HIGH RELIABILITY

4 V

e4

SILICON

IEC-61000-4-2

VS5V0BA1EST15R

ROHM

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

10 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

BIDIRECTIONAL

.1 W

HIGH RELIABILITY

6 V

e4

10

260

SILICON

8 V

IEC-61000-4-2

VS5V0BB1FST27N

ROHM

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

45 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-XBCC-N2

BIDIRECTIONAL

.1 W

HIGH RELIABILITY

5.3 V

e4

SILICON

IEC-61000-4-2

VS5V0BN1HST15R

ROHM

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

36 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-XBCC-N2

BIDIRECTIONAL

.1 W

HIGH RELIABILITY

6 V

e4

10

260

SILICON

10 V

IEC-61000-4-2

CM1230-08CP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

GRID ARRAY

Transient Suppressors

TIN SILVER COPPER

R-PBGA-B10

1

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

9.8 V

e1

30

260

SILICON

CPDUR5V0R-HF

Comchip Technology

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

154 W

7.5 V

AVALANCHE

.09 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-40 Cel

GOLD

R-PBCC-N2

BIDIRECTIONAL

14 V

5.6 V

e4

30

260

SILICON

9.4 V

IEC-61000-4-2

D5V0F1U2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

HIGH RELIABILITY

6 V

e4

260

SILICON

AEC-Q101

ESD5V3S1U02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

66 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.3 V

125 Cel

-55 Cel

R-XBCC-N2

UNIDIRECTIONAL

9 V

5.7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD7383NCTBG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

50 W

AVALANCHE

.1 uA

1

3 V

GRID ARRAY

3 V

85 Cel

-40 Cel

TIN SILVER COPPER

S-PBGA-B4

1

UNIDIRECTIONAL

10 V

6 V

e1

30

260

SILICON

IEC-61000-4-2

ESD7481MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE

12 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-5

ESDL2012MX4T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1.6 V

AVALANCHE

.5 uA

1

1 V

CHIP CARRIER

1 V

150 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

.313 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

7.5 V

1.4 V

e3

30

260

SILICON

2.1 V

IEC-61000-4-2, 4-5

LXES03TAA1-142

Murata Manufacturing

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

85 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

PESD5V0S1BSF,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

100 W

AVALANCHE

1

CHIP CARRIER

5 V

R-PBCC-N2

BIDIRECTIONAL

Not Qualified

6 V

SILICON

10 V

RCLAMP7534P.TNT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

5

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-XBCC-N5

1

BIDIRECTIONAL

6.5 V

e4

260

SILICON

11.5 V

RF2192-000

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

7 V

125 Cel

-55 Cel

R-PBCC-N2

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

10

260

SILICON

IEC-61000-4-2; UL RECOGNIZED

RF3076-000

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

AVALANCHE

4

CHIP CARRIER

7 V

125 Cel

-55 Cel

R-PBCC-N4

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

SESD1103Q6UG-0020-090

TE Connectivity

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

7

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 6 ELEMENTS

9 V

AVALANCHE

.005 uA

6

5 V

CHIP CARRIER

7 V

125 Cel

-55 Cel

R-PBCC-N7

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

9.2 V

SILICON

AEC-Q101; IEC-61000-4-2

SESDL2012MX4T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1.65 V

AVALANCHE

.5 uA

1

1 V

CHIP CARRIER

1 V

150 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

.313 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

6 V

1.4 V

e3

30

260

SILICON

2.3 V

IEC-61000-4-2, 4-5

U0402FC24C-T75-1

Protek Devices

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

SINGLE

250 W

26.7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

24 V

TIN LEAD

R-XBCC-N4

1

BIDIRECTIONAL

Not Qualified

55 V

26.7 V

e0

245

SILICON

VCUT05E1-SD0-G4-08

Vishay Intertechnology

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

78 W

8 V

AVALANCHE

.1 uA

1

5.5 V

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

13 V

6.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9 V

IEC-61000-4-2,4-5

TPD1E01B04DPLT

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

27 W

6.4 V

AVALANCHE

.01 uA

1

CHIP CARRIER

3.6 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

7 V

e4

30

260

SILICON

IEC-61000-4-2, 4-4, 4-5

SN65220YZBR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

UNSPECIFIED

COMPLEX

60 W

AVALANCHE

2

GRID ARRAY

6 V

S-XBGA-B4

1

UNIDIRECTIONAL

Not Qualified

.385 W

LOW CAPACITANCE

6.5 V

30

260

SILICON

8 V

TPD1E10B09DPYT

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

90 W

9.5 V

AVALANCHE

.1 uA

1

CHIP CARRIER

Transient Suppressors

9 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.162 W

13 V

9.5 V

e4

NOT SPECIFIED

260

SILICON

IEC-61000-4-2, 4-5

SN65220YZBT

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

UNSPECIFIED

COMPLEX

60 W

AVALANCHE

2

GRID ARRAY

6 V

S-XBGA-B4

1

UNIDIRECTIONAL

Not Qualified

.385 W

LOW CAPACITANCE

6.5 V

30

260

SILICON

8 V

TPD1E01B04DPLR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

27 W

6.4 V

AVALANCHE

.01 uA

1

CHIP CARRIER

3.6 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

7 V

e4

30

260

SILICON

IEC-61000-4-2, 4-4, 4-5

TPD2E001YFPR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

GRID ARRAY

Transient Suppressors

150 Cel

S-PBGA-B4

UNIDIRECTIONAL

Not Qualified

105 V

11 V

SILICON

PESD341DPLR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

54 W

6.2 V

AVALANCHE

.1 uA

1

3.6 V

CHIP CARRIER

3.6 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

10 V

4.7 V

SILICON

7.7 V

IEC-61000-4-2,4-5

ESD341DPLR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

54 W

6.2 V

AVALANCHE

.1 uA

1

3.6 V

CHIP CARRIER

3.6 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

10 V

5 V

e4

260

SILICON

7.2 V

IEC-61000-4-2,4-5

PESD761DPYRQ1

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

65 W

30.5 V

AVALANCHE

.05 uA

1

24 V

CHIP CARRIER

24 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

31 V

25.5 V

SILICON

35.5 V

AEC-Q101; IEC-61000-4-2, 4-5

ESD761DPYR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

65 W

30.5 V

AVALANCHE

.05 uA

1

24 V

CHIP CARRIER

24 V

150 Cel

-50 Cel

NICKEL PALLADIUM GOLD SILVER

R-PBCC-N2

1

BIDIRECTIONAL

36.3 V

25.5 V

e4

260

SILICON

35.5 V

IEC-61000-4-2,4-5

ESD761DPYRQ1

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

65 W

30.5 V

AVALANCHE

.05 uA

1

24 V

CHIP CARRIER

24 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD SILVER

R-PBCC-N2

1

BIDIRECTIONAL

36.3 V

25.5 V

e4

260

SILICON

35.5 V

AEC-Q101; IEC-61000-4-2, 4-5

PESD451DPLR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

50 W

8 V

AVALANCHE

.05 uA

1

5.5 V

CHIP CARRIER

5.5 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

10.4 V

7 V

SILICON

9 V

IEC-61000-4-2, 4-5

PESD441DPLR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

23 W

7 V

AVALANCHE

.05 uA

1

5.5 V

CHIP CARRIER

5.5 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

7.6 V

6 V

SILICON

8 V

IEC-61000-4-2, 4-5

MAX3203EEEWT+T

Analog Devices

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

AVALANCHE

6

GRID ARRAY

150 Cel

R-PBGA-B6

UNIDIRECTIONAL

.98 W

NOT SPECIFIED

NOT SPECIFIED

SILICON

MAX3204EEWT+T

Analog Devices

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

8

GRID ARRAY

Other Diodes

150 Cel

-40 Cel

TIN SILVER COPPER

R-PBGA-B6

1

UNIDIRECTIONAL

Not Qualified

.98 W

e1

30

260

SILICON

MAX3206EEWL+T

Analog Devices

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

9

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

12

GRID ARRAY

Other Diodes

150 Cel

-40 Cel

TIN SILVER COPPER

S-PBGA-B9

1

UNIDIRECTIONAL

Not Qualified

1.13 W

e1

30

260

SILICON

MAX3202EEWS+T

Analog Devices

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

4

GRID ARRAY

Other Diodes

150 Cel

-40 Cel

TIN SILVER COPPER

S-PBGA-B4

1

UNIDIRECTIONAL

Not Qualified

.92 W

e1

30

260

SILICON

CM6110

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

1.1 V

AVALANCHE

1

GRID ARRAY

8 V

85 Cel

-30 Cel

S-PBGA-B4

UNIDIRECTIONAL

13 V

10 V

SILICON

IEC-61000-4-2

NSP5501V10MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.5 uA

1

10 V

CHIP CARRIER

10 V

150 Cel

-65 Cel

R-PBCC-N2

UNIDIRECTIONAL

20 V

12 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-5

CM6100

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

6 V

AVALANCHE

1

GRID ARRAY

Transient Suppressors

S-PBGA-B4

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

9.8 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

NSPU3061N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.9 V

AVALANCHE

1 uA

1

6.3 V

CHIP CARRIER

6.3 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

110 pF

EXCELLENT CLAMPING CAPABILITY

9.7 V

6.4 V

e4

30

260

SILICON

9.5 V

IEC-61000-4-2, 4-5

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.