BOTTOM Transient Suppression Devices 1,197

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

PESD5V0F1BRSF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

28 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

6 V

SILICON

10 V

IEC-60134; IEC-61000-4-2, 4-5

PESD5V0X2UM

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

5 V

150 Cel

-65 Cel

R-PBCC-N3

UNIDIRECTIONAL

ANODE

IEC-61643-321

7.5 V

SILICON

10 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD5V0U5BF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

6.5 V

AVALANCHE

5

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PBCC-N6

1

BIDIRECTIONAL

Not Qualified

MO-252

5.5 V

e3

30

260

SILICON

9.5 V

IP4281CZ10

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

NICKEL PALLADIUM GOLD

R-PBCC-N10

1

UNIDIRECTIONAL

Not Qualified

8 V

e4

SILICON

PESD5V0F5UF/T4

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

AVALANCHE

5

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N6

UNIDIRECTIONAL

LOW CAPACITANCE, IEC-61643-321

7.5 V

SILICON

10 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD5V0X1BL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PBCC-N2

1

BIDIRECTIONAL

Not Qualified

6 V

e3

30

260

SILICON

9.5 V

PESD9X5.0L

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

TIN

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

6.2 V

e3

SILICON

PESD18VF1BL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

18 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

19 V

SILICON

24 V

IEC-60134; IEC-61000-4-5; IEC-61643-321

PESD16VX1UL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

16 V

85 Cel

TIN

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

17.5 V

e3

SILICON

30 V

PESD5V0X1BCAL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

TIN

R-PBCC-N2

1

BIDIRECTIONAL

IEC-61643-321

8.1 V

e3

SILICON

12.3 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD5V0L5UK

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

30 W

AVALANCHE

5

CHIP CARRIER

5 V

150 Cel

S-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

6.47 V

SILICON

7.14 V

PESD3V3L4UF-T4

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

5.6 V

AVALANCHE

.3 uA

4

3.3 V

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

-65 Cel

R-PBCC-N6

UNIDIRECTIONAL

LOW CAPACITANCE

MO-252

12 V

5.32 V

SILICON

5.88 V

AEC-Q101

PESD5V0V4UF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

16 W

6.8 V

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

MO-252

13 V

6.4 V

e3

30

260

SILICON

7.2 V

PESD5V0F5UF,132

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

AVALANCHE

5

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N6

UNIDIRECTIONAL

LOW CAPACITANCE, IEC-61643-321

7.5 V

SILICON

10 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD3V3U1BCSF,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

4.5 V

SILICON

8 V

IEC-60134; IEC-61000-4-2, 4-5

PESD5V0L4UF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

6.8 V

AVALANCHE

.025 uA

4

5 V

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-65 Cel

Tin (Sn)

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

MO-252

13 V

6.46 V

e3

30

260

SILICON

7.14 V

AEC-Q101

PESD5V0V2BM,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N3

BIDIRECTIONAL

CATHODE

IEC-61643-321

5.5 V

SILICON

7.8 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PRTR5V0U2F/T1

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ZENER

1

CHIP CARRIER

5.5 V

R-PBCC-N6

UNIDIRECTIONAL

Not Qualified

MO-252

6 V

SILICON

9 V

PESD18VF1BL,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

18 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

19 V

SILICON

24 V

IEC-60134; IEC-61000-4-5; IEC-61643-321

PESD5V0C1BSF,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

IEC-61643-321

6 V

SILICON

IEC-60134; IEC-61000-4-2, 4-5

PESD24VF1BSF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

28 V

AVALANCHE

.03 uA

1

24 V

CHIP CARRIER

24 V

125 Cel

-45 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

17 V

24.5 V

SILICON

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PRTR5V0U2F/T4

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ZENER

1

CHIP CARRIER

5.5 V

R-PBCC-N6

UNIDIRECTIONAL

Not Qualified

MO-252

6 V

SILICON

9 V

PESD15VS1UL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

18 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

15 V

150 Cel

Tin (Sn)

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

17.6 V

e3

30

260

SILICON

18.4 V

PESD5V0U2BMB

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

5 V

150 Cel

-55 Cel

TIN

R-PBCC-N3

1

BIDIRECTIONAL

CATHODE

IEC-61643-321

5.5 V

e3

SILICON

9.5 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD5V0R1BSF,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

6 V

SILICON

IEC-60134

PESD5V0U2BM

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PBCC-N3

1

UNIDIRECTIONAL

Not Qualified

e3

30

260

SILICON

PESD5V0F5UF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

AVALANCHE

5

CHIP CARRIER

5 V

150 Cel

-55 Cel

TIN

R-PBCC-N6

1

UNIDIRECTIONAL

LOW CAPACITANCE, IEC-61643-321

7.5 V

e3

SILICON

10 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD5V0S4UF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

110 W

6.8 V

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

5 V

Tin (Sn)

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

12 V

6.46 V

e3

30

260

SILICON

7.14 V

PESD5V0V4UF,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

16 W

6.8 V

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

TIN

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

MO-252

13 V

6.4 V

e3

30

260

SILICON

7.2 V

PESD24VS1UL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

27 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

24 V

150 Cel

Tin (Sn)

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

26.5 V

e3

30

260

SILICON

27.5 V

PESD5V0V1BSF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

8 W

AVALANCHE

1

CHIP CARRIER

5 V

R-PBCC-N2

BIDIRECTIONAL

Not Qualified

6 V

SILICON

10 V

PESD5V0X2UAM

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

5 V

150 Cel

-65 Cel

R-PBCC-N3

UNIDIRECTIONAL

ANODE

IEC-61643-321

7.5 V

SILICON

10 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

IP4284CZ10-TB

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

R-PBCC-N10

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

6 V

SILICON

9 V

PESD5V0X2UMB,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

5 V

150 Cel

-65 Cel

R-PBCC-N3

UNIDIRECTIONAL

ANODE

IEC-61643-321

7.5 V

SILICON

10 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PRTR5V0U2F

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

ZENER

1

CHIP CARRIER

Transient Suppressors

5.5 V

Tin (Sn)

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

MO-252

6 V

e3

30

260

SILICON

9 V

PESD3V3U1BCSF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

4.5 V

SILICON

8 V

IEC-60134; IEC-61000-4-2, 4-5

PESD5V0V1USF,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

6 V

SILICON

8 V

IEC-60134; IEC-61000-4-2

PRTR5V0U2K

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

SINGLE

7.5 V

ZENER

1

CHIP CARRIER

Transient Suppressors

5.5 V

Tin (Sn)

S-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

6 V

e3

30

260

SILICON

9 V

PESD5V0S1UL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

6.8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

6.4 V

e3

30

260

SILICON

7.2 V

PESD3V3S4UF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

110 W

5.6 V

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

3.3 V

Tin (Sn)

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

11 V

5.32 V

e3

30

260

SILICON

5.88 V

PESD24VF1BL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

24 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

24.5 V

SILICON

31.5 V

AEC-Q101; IEC-60134

IP4242CZ6

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

TIN

R-PBCC-N6

UNIDIRECTIONAL

Not Qualified

MO-252

6 V

e3

SILICON

9 V

PESD5V0L2UM

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

30 W

6.8 V

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PBCC-N3

1

UNIDIRECTIONAL

ANODE

Not Qualified

.25 W

6.46 V

e3

30

260

SILICON

7.14 V

PESD5V0V2BM

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N3

BIDIRECTIONAL

CATHODE

IEC-61643-321

5.5 V

SILICON

7.8 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD5V0V4UK,132

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

25 W

6.8 V

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

S-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

10 V

6.47 V

30

260

SILICON

7.14 V

PESD5V0F1USF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

IEC-61643-321

6 V

SILICON

10 V

IEC-60134; IEC-61000-4-2, 4-5

PESD5V0V2BMB,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N3

BIDIRECTIONAL

CATHODE

IEC-61643-321

5.5 V

SILICON

7.8 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD3V3X1BL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

6.3 V

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

Tin (Sn)

R-PBCC-N2

1

BIDIRECTIONAL

Not Qualified

5 V

e3

30

260

SILICON

7.8 V

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.