BOTTOM Transient Suppression Devices 1,197

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

NSPM3031MXT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4.6 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY

7.6 V

4 V

e4

30

260

SILICON

5.5 V

IEC-61000-4-2, 4-5

ESD5382MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

14.2 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

UNIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

22 V

14.2 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4

ESD8351N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

1 uA

1

3.7 V

CHIP CARRIER

3.7 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

10 V

5.5 V

e4

SILICON

7.8 V

IEC-61000-4-2, 4-5

SZESD7471N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.3 V

150 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY

15 V

7 V

30

260

SILICON

AEC-Q101; IEC-61000-4-2, 4-5

SZESD7181MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

18.5 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

41.1 V

20.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

35 V

AEC-Q101; IEC-61000-4-2, 4-5

ESD7451N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE

13 V

5 V

30

260

SILICON

7.5 V

IEC-61000-4-2, 4-5

ESD5111PFCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

R-PBCC-N2

1

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

6.5 V

3.68 V

30

260

SILICON

6.5 V

IEC-61000-4-2

SZESDM3551MX2WT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.3 V

AVALANCHE

.1 uA

1

5.5 V

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

8.2 V

5.6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

7 V

AEC-Q101; IEC-61000-4-2, 4-5; ISO 10605

ESD7471N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.3 V

150 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY

15 V

7 V

30

260

SILICON

IEC-61000-4-2, 4-5

ESD8472BMUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

9.5 V

AVALANCHE

.01 uA

1

5.3 V

CHIP CARRIER

5.3 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE, ULTRA LOW CAPACITANCE

20 V

7 V

SILICON

12 V

IEC-61000-4-2, 4-5

CM1204-03CP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

6 V

AVALANCHE

4

GRID ARRAY

Transient Suppressors

TIN SILVER COPPER

R-PBGA-B5

UNIDIRECTIONAL

Not Qualified

.2 W

15 V

e1

260

SILICON

SZESD7424MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

24 V

150 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

27 V

30

260

SILICON

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

ESD5101AFCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

6.5 V

5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

6.5 V

IEC-61000-4-2

ESD7462N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

16 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

16.5 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

28 V

IEC-61000-4-2, 4-4, 4-5

ESD8111FCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.9 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

8 V

5.5 V

e3

30

260

SILICON

8.6 V

IEC-61000-4-2

ESD8101PFCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.9 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

.4 pF

ULTRA LOW CAPACITANCE

8 V

5.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

8.6 V

IEC-61000-4-2

ESD8451N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.9 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

125 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

LOW CAPACITANCE

16 V

5.5 V

30

260

SILICON

8.3 V

IEC-61000-4-2

ESD7241N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

24 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

24.3 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

28 V

IEC-61000-4-2, 4-4, 4-5

ESD7421N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

10.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

16 V

150 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

38.1 V

10.5 V

30

260

SILICON

14 V

IEC-61000-4-2

CM1220-08CP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 8 ELEMENTS

AVALANCHE

8

GRID ARRAY

6 V

TIN SILVER COPPER

R-PBGA-B10

UNIDIRECTIONAL

Not Qualified

e1

SILICON

ESD7383

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

50 W

6 V

AVALANCHE

1

GRID ARRAY

Transient Suppressors

85 Cel

-40 Cel

S-PBGA-B4

UNIDIRECTIONAL

10 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

SESDM1131MX4T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

7 V

4 V

SILICON

6 V

IEC-61000-4-2

ESD7501MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

11.5 V

5.5 V

e4

30

260

SILICON

IEC-61000-4-2, 4-5

SZESD7451N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE

13 V

5 V

30

260

SILICON

7.5 V

AEC-Q101; IEC-61000-4-2, 4-5

NUP4101FCT1

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

ZENER

8

GRID ARRAY

150 Cel

R-PBGA-B5

BIDIRECTIONAL

Not Qualified

SILICON

ESD5371MXT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

3.5 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

7.5 V

IEC-61000-4-2, 4-5

ESD11B5.0ST5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

5.8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

125 Cel

-40 Cel

R-XBCC-N2

3

BIDIRECTIONAL

Not Qualified

.25 W

LOW CAPACITANCE

5.8 V

260

SILICON

CM1230-04CP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

GRID ARRAY

Transient Suppressors

TIN SILVER COPPER

R-PBGA-B6

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

9.8 V

e1

SILICON

CM1220-04CP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

AVALANCHE

4

GRID ARRAY

6 V

TIN SILVER COPPER

R-PBGA-B5

UNIDIRECTIONAL

Not Qualified

e1

SILICON

SZESD7571N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.3 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY

7 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101; IEC-61000-4-2, 4-5

ESD5101PFCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

6.5 V

3.68 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

6.5 V

IEC-61000-4-2

CM1242-33CP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

7.6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

R-XBCC-N2

BIDIRECTIONAL

Not Qualified

8.6 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9 V

ESD7181MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

18.5 V

125 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

41.1 V

20.5 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

35 V

IEC-61000-4-2, 4-5

ESD7561N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

16 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

39 V

16.5 V

e4

30

260

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD5381MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.1 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

UNIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

10.5 V

6.1 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4

SZESD8451MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.9 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

LOW CAPACITANCE

19 V

5.5 V

e4

30

260

SILICON

8.3 V

AEC-Q101; IEC-61000-4-2

CM1244-04CP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

5.5 V

AVALANCHE

4

GRID ARRAY

Transient Suppressors

R-PBGA-B5

UNIDIRECTIONAL

Not Qualified

.2 W

15 V

5.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD10201MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.2 uA

1

21 V

CHIP CARRIER

21 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE

40.4 V

21.2 V

e4

30

260

SILICON

IEC-61000-4-2, 4-5

SZESD8351MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

.5 uA

1

3.3 V

CHIP CARRIER

Transient Suppressors

3.3 V

125 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

11.2 V

5.5 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

7.8 V

AEC-Q101

ESD7321MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.2 uA

1

7 V

CHIP CARRIER

7 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

18 V

8 V

e4

30

260

SILICON

IEC-61000-4-2

ESD7424MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

24 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

.3 W

27 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD8551N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

5.5 V

e4

30

260

SILICON

8.3 V

IEC-61000-4-2

SZESD7421N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

10.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

16 V

150 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

38.1 V

10.5 V

30

260

SILICON

14 V

AEC-Q101; IEC-61000-4-2

ESD8111PFCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.9 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

8 V

5.5 V

e3

30

260

SILICON

8.6 V

IEC-61000-4-2

SZESD8451N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.9 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

125 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

LOW CAPACITANCE

16 V

5.5 V

30

260

SILICON

8.3 V

AEC-Q101; IEC-61000-4-2

ESD7382MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1 uA

1

5 V

CHIP CARRIER

5 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

.55 pF

EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE

10 V

5.2 V

e4

30

260

SILICON

IEC-61000-4-2, 4-5

SZESD8551N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

5.5 V

e4

30

260

SILICON

8.3 V

AEC-Q101; IEC-61000-4-2

ESD5581MXT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.2 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY

12 V

5.2 V

e4

30

260

SILICON

7.5 V

IEC-61000-4-2

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.