BOTTOM Transient Suppression Devices 1,197

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

PESD5V0L5UK,132

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

30 W

6.8 V

AVALANCHE

5

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

S-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

9.9 V

6.47 V

30

260

SILICON

7.14 V

PESD5V0U1UL,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

TIN

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

5.8 V

e3

30

260

SILICON

8.8 V

SP3530-01ETG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

8.2 V

AVALANCHE

1 uA

1

5 V

CHIP CARRIER

7 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

LOW CAPACITANCE

11.8 V

e4

40

260

SILICON

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

SPHV15-01ETG-C

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

200 W

16.7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

15 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

MO-236

30 V

16.7 V

e4

30

260

SILICON

AEC-Q101

SPHV24-01ETG-C

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

200 W

26.7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

24 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

MO-236

50 V

26.7 V

e4

30

260

SILICON

AEC-Q101

CM1205-08CP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 8 ELEMENTS

AVALANCHE

8

GRID ARRAY

Transient Suppressors

6 V

TIN SILVER COPPER

R-PBGA-B10

UNIDIRECTIONAL

Not Qualified

12 V

e1

SILICON

D12V0L1B2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

100 W

AVALANCHE

1

CHIP CARRIER

12 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

13 V

e4

30

260

SILICON

AEC-Q101; IEC-61000-4-5

D5V0F2U3LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N3

1

UNIDIRECTIONAL

ANODE

.3 W

6 V

e4

260

SILICON

D5V0L1B2LP4-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

84 W

7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

14 V

6 V

e3

30

260

SILICON

8 V

IEC-61000-4-5

D5V0P1B2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

6 V

e4

260

SILICON

8 V

ESD5V3U4UHDMIE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

9

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

AVALANCHE

4

CHIP CARRIER

5.3 V

125 Cel

-40 Cel

GOLD

R-PBCC-N9

1

UNIDIRECTIONAL

ANODE

6 V

e4

SILICON

ESD7331MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

7.5 V

4 V

e4

30

260

SILICON

IEC-61000-4-2

ESD7410N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1 uA

1

8 V

CHIP CARRIER

8 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

19.4 V

10 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD7461N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

16.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

16 V

150 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

39 V

16.5 V

30

260

SILICON

IEC-61000-4-2, 4-4, 4-5

IP4221CZ6-S,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

ZENER

1

CHIP CARRIER

Transient Suppressors

TIN

R-PBCC-N6

UNIDIRECTIONAL

Not Qualified

ULTRA LOW CAPACITANCE

6 V

e3

30

260

SILICON

9 V

PESD24VF1BSFYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

24 V

125 Cel

-45 Cel

R-PBCC-N2

BIDIRECTIONAL

IEC-61643-321

24.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-60134; IEC-61000-4-2, 4-5

PESD3V3U1UL,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5.6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

TIN

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

4.5 V

e3

30

260

SILICON

6.8 V

PESD5V0V1BCSF,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

8 W

8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

R-XBCC-N2

BIDIRECTIONAL

12.8 V

6 V

SILICON

10 V

PTPD1E01B04DPYRQ1

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

27 W

6.4 V

AVALANCHE

.01 uA

1

2.5 V

CHIP CARRIER

3.6 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

7 V

SILICON

AEC-Q101, IEC-61000-4-2, 4-4, 4-5

RCLAMP0521P.TCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

100 W

9.3 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-XBCC-N2

1

BIDIRECTIONAL

Not Qualified

25 V

6 V

e4

260

SILICON

11 V

IEC-61000-4-2, 4-4

SP12-01WTG-C-HV

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

100 W

AVALANCHE

.1 uA

1

12 V

CHIP CARRIER

12 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

MO-236

19 V

13.3 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

SP3030-01ETG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

LOW CAPACITANCE

MO-236

e4

10

260

SILICON

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

SP3530-01UTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

8.2 V

AVALANCHE

1 uA

1

5 V

CHIP CARRIER

7 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

LOW CAPACITANCE

11.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

SSESD11N5.0ST5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1 uA

1

5 V

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE

12 V

5.8 V

30

260

SILICON

IEC-61000-4-2

UCLAMP0871P.TNT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

1500 W

AVALANCHE

1

CHIP CARRIER

8 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-XBCC-N2

1

UNIDIRECTIONAL

9.5 V

e4

260

SILICON

13 V

AEC-Q101; IEC-61000-4-5

UCLAMP2271P.TNT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

1500 W

AVALANCHE

1

CHIP CARRIER

22 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-XBCC-N2

1

UNIDIRECTIONAL

25.5 V

e4

260

SILICON

33.5 V

AEC-Q101; IEC-61000-4-5

UCLAMP2501T.TCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

40 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

2.5 V

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-XBCC-N2

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

7.5 V

e4

30

260

SILICON

UCLAMP3301P.TCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

40 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-XBCC-N2

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

8 V

e4

260

SILICON

CFTVS5V0BULC

Central Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

14 W

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-55 Cel

R-XBCC-N2

BIDIRECTIONAL

6 V

SILICON

10 V

CPDER24V-HF

Comchip Technology

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

47 W

28 V

AVALANCHE

2 uA

1

24 V

CHIP CARRIER

Transient Suppressors

24 V

125 Cel

-40 Cel

GOLD

R-PBCC-N2

BIDIRECTIONAL

47 V

25 V

e4

10

260

SILICON

IEC-61000-4-2

CPDER24V0U-HF

Comchip Technology

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

24 V

125 Cel

-55 Cel

GOLD

R-PBCC-N2

UNIDIRECTIONAL

50 V

26.5 V

e4

10

260

SILICON

IEC-61000-4-2

CPDER5V0-HF

Comchip Technology

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

75 W

7 V

AVALANCHE

2 uA

1

5 V

CHIP CARRIER

Transient Suppressors

5 V

125 Cel

-40 Cel

GOLD

R-PBCC-N2

BIDIRECTIONAL

15 V

5.1 V

e4

10

260

SILICON

IEC-61000-4-2

CPDER5V0C-HF

Comchip Technology

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

58 W

7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

125 Cel

-55 Cel

GOLD

R-PBCC-N2

BIDIRECTIONAL

6.1 V

e4

10

260

SILICON

IEC-61000-4-2

CPDQC5V0R-HF

Comchip Technology

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

154 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-40 Cel

GOLD

R-PBCC-N2

BIDIRECTIONAL

5.6 V

e4

30

260

SILICON

9.4 V

IEC-61000-4-2

D5V0H1B2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

375 W

7.5 V

AVALANCHE

.2 uA

1

5 V

CHIP CARRIER

5.5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

BIDIRECTIONAL

.25 W

12.5 V

6 V

e4

260

SILICON

9 V

IEC-61000-4-2, 4-5

ESD24VL1B02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

25 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

24 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

55 V

24.3 V

SILICON

ESD5481MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5.7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

LOW APAITANE, EXCELLENT CLAMPING CAPABILITY

12.5 V

5.7 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD8011MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

34 W

7.3 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.5 V

125 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

19 V

6.5 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

PESD3V3L4UF,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

5.6 V

AVALANCHE

.3 uA

4

3.3 V

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

-65 Cel

TIN

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

MO-252

12 V

5.32 V

e3

30

260

SILICON

5.88 V

AEC-Q101

PESD5V0S4UF,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

110 W

6.8 V

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

TIN

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

12 V

6.46 V

e3

30

260

SILICON

7.14 V

PESD9X5.0L,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

R-PBCC-N2

UNIDIRECTIONAL

Not Qualified

18 V

6.2 V

SILICON

PTVS5V0Z1USKYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1200 W

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

CATHODE

IEC-61643-321

6.4 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

7.8 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

RCLAMP0512TQTNT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

170 W

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N3

1

UNIDIRECTIONAL

6.5 V

e4

260

SILICON

11.5 V

AEC-Q100; IEC-61000-4-2, 4-4, 4-5

RCLAMP0531TQTCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

80 W

9.3 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

20 V

6 V

e4

30

260

SILICON

11 V

AEC-Q100; IEC-61000-4-2, 4-4

RCLAMP0821P.TCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

100 W

10 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

8 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

25 V

10 V

e4

260

SILICON

UCLAMP0301PQTNT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

40 W

AVALANCHE

1

CHIP CARRIER

3 V

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

3

BIDIRECTIONAL

3.1 V

e4

260

SILICON

4.6 V

AEC-Q100; IEC-61000-4-2, 4-4

ESDALC12-1T2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

50 W

13 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

10 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

3

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

20 V

12 V

e4

30

260

SILICON

14 V

SP3042-01WTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20 W

AVALANCHE

1

CHIP CARRIER

5.3 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.