Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Package Body Material | Working Test Current | Config | Nominal Reference Voltage | Maximum Output Current | Maximum Non Repetitive Peak Reverse Power Dissipation | Maximum Forward Voltage (VF) | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Maximum Dynamic Impedance | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Minimum Diode Capacitance | Additional Features | JEDEC-95 Code | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Maximum Breakdown Voltage | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Texas Instruments |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
YES |
SQUARE |
UNSPECIFIED |
14 V |
AVALANCHE |
.05 uA |
Transient Suppressors |
13 V |
85 Cel |
-40 Cel |
TIN SILVER COPPER |
S-XBGA-N4 |
1 |
BIDIRECTIONAL |
14 V |
e1 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Semtech |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
40 W |
AVALANCHE |
.05 uA |
1 |
2.5 V |
CHIP CARRIER |
2.5 V |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
BIDIRECTIONAL |
Not Qualified |
LOW LEAKAGE CURRENT |
8 V |
e4 |
260 |
SILICON |
IEC-61000-4-2, 4-4 |
||||||||||||||||||
|
Infineon Technologies |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
AVALANCHE |
1 |
CHIP CARRIER |
3.3 V |
125 Cel |
-40 Cel |
GOLD |
R-PBCC-N2 |
1 |
BIDIRECTIONAL |
3.65 V |
e4 |
SILICON |
|||||||||||||||||||||||||
|
Nexperia |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
AVALANCHE |
.1 uA |
1 |
3.3 V |
CHIP CARRIER |
3.3 V |
150 Cel |
-55 Cel |
TIN |
R-PBCC-N2 |
1 |
BIDIRECTIONAL |
11.5 V |
4.5 V |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134; IEC-61000-4-2, 4-4, 4-5 |
|||||||||||||||||||
|
Nexperia |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
AVALANCHE |
1 |
CHIP CARRIER |
5 V |
125 Cel |
-40 Cel |
R-PBCC-N2 |
1 |
BIDIRECTIONAL |
IEC-61643-321 |
6 V |
30 |
260 |
SILICON |
IEC-60134; IEC-61000-4-2, 4-5 |
|||||||||||||||||||||||
|
Littelfuse |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
8.5 V |
AVALANCHE |
.5 uA |
1 |
5 V |
CHIP CARRIER |
6 V |
150 Cel |
-40 Cel |
R-PBCC-N2 |
BIDIRECTIONAL |
NONE |
30 pF |
LOW CAPACITANCE |
MO-236 |
15.6 V |
40 |
260 |
SILICON |
9.5 V |
AEC-Q101; IEC-61000-4-2, 4-4, 4-5 |
|||||||||||||||||
|
Texas Instruments |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
27 W |
6.4 V |
AVALANCHE |
.01 uA |
1 |
2.5 V |
CHIP CARRIER |
3.6 V |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD SILVER |
R-PBCC-N2 |
2 |
BIDIRECTIONAL |
7 V |
e4 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||
|
Diodes Incorporated |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
130 W |
7.5 V |
AVALANCHE |
1 |
CHIP CARRIER |
Transient Suppressors |
5 V |
150 Cel |
-65 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
BIDIRECTIONAL |
.25 W |
14 V |
5.5 V |
e4 |
30 |
260 |
SILICON |
9.5 V |
IEC-61000-4-5 |
||||||||||||||||
|
Diodes Incorporated |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
AVALANCHE |
1 |
CHIP CARRIER |
5 V |
150 Cel |
-65 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
BIDIRECTIONAL |
.25 W |
5.5 V |
e4 |
260 |
SILICON |
9.5 V |
IEC-61000-4-5 |
|||||||||||||||||||||
|
Littelfuse |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
200 W |
AVALANCHE |
1 |
CHIP CARRIER |
36 V |
125 Cel |
-40 Cel |
R-PBCC-N2 |
BIDIRECTIONAL |
MO-236 |
40 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
AEC-Q101; IEC-61000-4-2, 4-4, 4-5 |
|||||||||||||||||||||||
|
Onsemi |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
AVALANCHE |
1 |
CHIP CARRIER |
16 V |
150 Cel |
-55 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
R-PBCC-N2 |
1 |
BIDIRECTIONAL |
.3 W |
16.5 V |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
28 V |
AEC-Q101; IEC-61000-4-2, 4-4, 4-5 |
||||||||||||||||||||
|
NXP Semiconductors |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
150 W |
39 V |
AVALANCHE |
1 |
CHIP CARRIER |
Transient Suppressors |
36 V |
150 Cel |
-55 Cel |
TIN |
R-PBCC-N2 |
1 |
UNIDIRECTIONAL |
58 V |
38.2 V |
e3 |
30 |
260 |
SILICON |
39.8 V |
AEC-Q101; IEC-60134; IEC-61000-4-5 |
|||||||||||||||||
|
NXP Semiconductors |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
AVALANCHE |
1 |
CHIP CARRIER |
5 V |
150 Cel |
-55 Cel |
R-PBCC-N2 |
UNIDIRECTIONAL |
IEC-61643-321 |
6 V |
SILICON |
10 V |
IEC-60134; IEC-61000-4-2, 4-5 |
|||||||||||||||||||||||||
NXP Semiconductors |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
6 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
AVALANCHE |
1 |
CHIP CARRIER |
R-PBCC-N6 |
UNIDIRECTIONAL |
MO-252 |
6 V |
SILICON |
9 V |
||||||||||||||||||||||||||||||
|
Texas Instruments |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
4 |
YES |
SQUARE |
UNSPECIFIED |
COMPLEX |
14 V |
AVALANCHE |
4 |
CHIP CARRIER |
Transient Suppressors |
S-XBCC-N4 |
BIDIRECTIONAL |
Not Qualified |
.27 W |
14 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||
|
Onsemi |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
AVALANCHE |
1 |
CHIP CARRIER |
5.3 V |
150 Cel |
-55 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
R-PBCC-N2 |
1 |
BIDIRECTIONAL |
.3 W |
EXCELLENT CLAMPING CAPABILITY |
7 V |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
IEC-61000-4-2, 4-5 |
||||||||||||||||||||
|
Onsemi |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
AVALANCHE |
.1 uA |
1 |
3.3 V |
CHIP CARRIER |
3.3 V |
150 Cel |
-55 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
BIDIRECTIONAL |
.25 W |
20 pF |
EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE, ULTRA LOW CAPACITANCE |
8 V |
4.4 V |
e4 |
30 |
260 |
SILICON |
6.2 V |
IEC-61000-4-2 |
|||||||||||||||
|
NXP Semiconductors |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
6 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON ANODE, 4 ELEMENTS |
30 W |
6.8 V |
AVALANCHE |
.025 uA |
4 |
5 V |
CHIP CARRIER |
Transient Suppressors |
5 V |
150 Cel |
-65 Cel |
TIN |
R-PBCC-N6 |
1 |
UNIDIRECTIONAL |
Not Qualified |
LOW CAPACITANCE |
MO-252 |
13 V |
6.46 V |
e3 |
30 |
260 |
SILICON |
7.14 V |
AEC-Q101 |
||||||||||||
|
Diodes Incorporated |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
AVALANCHE |
1 |
CHIP CARRIER |
5.5 V |
150 Cel |
-65 Cel |
MATTE TIN |
R-PBCC-N2 |
1 |
UNIDIRECTIONAL |
.25 W |
HIGH RELIABILITY |
6 V |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||
|
Infineon Technologies |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
30 W |
8 V |
AVALANCHE |
1 |
CHIP CARRIER |
Transient Suppressors |
5.5 V |
125 Cel |
-55 Cel |
GOLD |
R-XBCC-N2 |
BIDIRECTIONAL |
LOW CAPACITANCE |
8.5 V |
e4 |
SILICON |
||||||||||||||||||||||
|
Infineon Technologies |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
AVALANCHE |
1 |
CHIP CARRIER |
5.3 V |
125 Cel |
-40 Cel |
R-PBCC-N2 |
BIDIRECTIONAL |
6 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
Texas Instruments |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
6 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
25 W |
AVALANCHE |
.1 uA |
1 |
CHIP CARRIER |
5.5 V |
85 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
R-PBCC-N6 |
1 |
UNIDIRECTIONAL |
LOW CAPACITANCE |
MO-287UFAD |
20 V |
9 V |
e4 |
30 |
260 |
SILICON |
IEC-61000-4-2; IEC-61000-4-5 |
|||||||||||||||||
|
Semtech |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
1500 W |
AVALANCHE |
1 |
CHIP CARRIER |
18 V |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
R-XBCC-N2 |
1 |
UNIDIRECTIONAL |
20 V |
e4 |
260 |
SILICON |
25 V |
AEC-Q101; IEC-61000-4-5 |
|||||||||||||||||||||
|
Diodes Incorporated |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
AVALANCHE |
1 |
CHIP CARRIER |
5.5 V |
150 Cel |
-65 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
BIDIRECTIONAL |
.25 W |
7 V |
e4 |
260 |
SILICON |
|||||||||||||||||||||||
|
Infineon Technologies |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
56 W |
8 V |
AVALANCHE |
.1 uA |
1 |
5.5 V |
CHIP CARRIER |
5.5 V |
125 Cel |
-55 Cel |
R-XBCC-N2 |
1 |
BIDIRECTIONAL |
15 V |
6.05 V |
SILICON |
IEC-61000-4-2, 4-4, 4-5 |
|||||||||||||||||||||
|
Infineon Technologies |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
260 W |
AVALANCHE |
1 |
CHIP CARRIER |
3.3 V |
125 Cel |
-55 Cel |
GOLD |
R-XBCC-N2 |
1 |
BIDIRECTIONAL |
e4 |
SILICON |
|||||||||||||||||||||||||
|
Onsemi |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
10 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON ANODE, 4 ELEMENTS |
AVALANCHE |
4 |
CHIP CARRIER |
3.3 V |
125 Cel |
-55 Cel |
MATTE TIN |
R-PBCC-N10 |
1 |
UNIDIRECTIONAL |
ULTRA LOW CAPACITANCE |
e3 |
30 |
260 |
SILICON |
6 V |
IEC-61000-4-2 |
|||||||||||||||||||||
|
Onsemi |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
6.3 V |
AVALANCHE |
.1 uA |
1 |
5.5 V |
CHIP CARRIER |
5.5 V |
150 Cel |
-55 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
BIDIRECTIONAL |
.25 W |
EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE |
8.2 V |
5.6 V |
e4 |
30 |
260 |
SILICON |
7 V |
IEC-61000-4-2, 4-5; ISO 10605 |
|||||||||||||||
|
Semtech |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
45 W |
8 V |
AVALANCHE |
.05 uA |
1 |
3.3 V |
CHIP CARRIER |
3.3 V |
85 Cel |
-40 Cel |
R-XBCC-N2 |
BIDIRECTIONAL |
ULTRA LOW CAPACITANCE |
6.5 V |
5.5 V |
SILICON |
10 V |
IEC-61000-4-2, 4-4 |
||||||||||||||||||||
|
Bourns |
CURRENT SUPPRESSORS |
BOTTOM |
NO LEAD |
6 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
AVALANCHE |
2 |
CHIP CARRIER |
125 Cel |
-55 Cel |
R-PBCC-N6 |
BIDIRECTIONAL |
40 V |
SILICON |
|||||||||||||||||||||||||||||
|
Onsemi |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
BALL |
4 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
AVALANCHE |
1 |
GRID ARRAY |
Transient Suppressors |
TIN SILVER COPPER |
S-PBGA-B4 |
1 |
UNIDIRECTIONAL |
Not Qualified |
HIGH RELIABILITY |
9.8 V |
e1 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Comchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
154 W |
AVALANCHE |
1 |
CHIP CARRIER |
5 V |
150 Cel |
-40 Cel |
MATTE TIN |
R-PBCC-N2 |
BIDIRECTIONAL |
5.6 V |
e3 |
SILICON |
9.4 V |
IEC-61000-4-2 |
|||||||||||||||||||||||
|
Diodes Incorporated |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
175 W |
AVALANCHE |
1 uA |
1 |
1.8 V |
CHIP CARRIER |
1.8 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PBCC-N2 |
BIDIRECTIONAL |
.25 W |
7 V |
2.1 V |
e3 |
SILICON |
IEC-61000-4-2, 4-5; MIL-STD-202 |
||||||||||||||||||||
|
Diodes Incorporated |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
68 W |
AVALANCHE |
1 |
CHIP CARRIER |
20 V |
150 Cel |
-65 Cel |
MATTE TIN |
R-PBCC-N2 |
1 |
BIDIRECTIONAL |
.25 W |
21 V |
e3 |
30 |
260 |
SILICON |
25 V |
IEC-61000-4-2 |
|||||||||||||||||||
|
Diodes Incorporated |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
AVALANCHE |
1 |
CHIP CARRIER |
5.5 V |
150 Cel |
-65 Cel |
MATTE TIN |
R-PBCC-N2 |
1 |
BIDIRECTIONAL |
.25 W |
7 V |
e3 |
260 |
SILICON |
|||||||||||||||||||||||
|
Diodes Incorporated |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
35 W |
AVALANCHE |
1 |
CHIP CARRIER |
3.3 V |
150 Cel |
-65 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
BIDIRECTIONAL |
.25 W |
3.8 V |
e4 |
30 |
260 |
SILICON |
6.5 V |
IEC-61000-4-2 |
|||||||||||||||||||
|
Infineon Technologies |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
30 W |
AVALANCHE |
1 |
CHIP CARRIER |
Transient Suppressors |
3.3 V |
125 Cel |
-55 Cel |
GOLD |
R-PBCC-N2 |
1 |
BIDIRECTIONAL |
LOW CAPACITANCE |
11 V |
e4 |
SILICON |
8.1 V |
|||||||||||||||||||||
|
Infineon Technologies |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
30 W |
AVALANCHE |
1 |
CHIP CARRIER |
Transient Suppressors |
3.3 V |
125 Cel |
-55 Cel |
R-PBCC-N2 |
1 |
BIDIRECTIONAL |
LOW CAPACITANCE |
11 V |
SILICON |
8.1 V |
|||||||||||||||||||||||
|
Infineon Technologies |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
80 W |
AVALANCHE |
1 |
CHIP CARRIER |
22 V |
125 Cel |
-55 Cel |
R-XBCC-N2 |
1 |
BIDIRECTIONAL |
SILICON |
IEC-61000-4-2, 4-4, 4-5 |
||||||||||||||||||||||||||
|
Infineon Technologies |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
25 W |
AVALANCHE |
1 |
CHIP CARRIER |
3.3 V |
125 Cel |
-55 Cel |
R-XBCC-N2 |
1 |
BIDIRECTIONAL |
SILICON |
IEC-61000-4-2, 4-4, 4-5 |
||||||||||||||||||||||||||
|
Infineon Technologies |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
44 W |
AVALANCHE |
1 |
CHIP CARRIER |
5.5 V |
125 Cel |
-55 Cel |
R-XBCC-N2 |
1 |
BIDIRECTIONAL |
SILICON |
IEC-61000-4-2, 4-4, 4-5 |
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|
Infineon Technologies |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
AVALANCHE |
1 |
CHIP CARRIER |
Transient Suppressors |
3.3 V |
MATTE TIN |
R-XBCC-N2 |
UNIDIRECTIONAL |
Not Qualified |
12 V |
5 V |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Onsemi |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
7 V |
AVALANCHE |
.5 uA |
1 |
3.3 V |
CHIP CARRIER |
Transient Suppressors |
3.3 V |
125 Cel |
-55 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
R-PBCC-N2 |
1 |
UNIDIRECTIONAL |
ULTRA LOW CAPACITANCE |
11.2 V |
5.5 V |
e4 |
30 |
260 |
SILICON |
7.8 V |
IEC-61000-4-2 |
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|
STMicroelectronics |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
18 W |
AVALANCHE |
1 |
CHIP CARRIER |
3 V |
150 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
UNIDIRECTIONAL |
ULTRA LOW CAPACITANCE |
6 V |
e4 |
30 |
260 |
SILICON |
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|
Micro Commercial Components |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
80 W |
AVALANCHE |
1 |
CHIP CARRIER |
5 V |
125 Cel |
-55 Cel |
MATTE TIN |
R-PBCC-N2 |
1 |
BIDIRECTIONAL |
ULTRA LOW CAPACITANCE |
6 V |
e3 |
SILICON |
9 V |
IEC-61000-4-2, 4-4, 4-5 |
|||||||||||||||||||||
|
Murata Manufacturing |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
18 V |
AVALANCHE |
1 |
CHIP CARRIER |
Transient Suppressors |
17.5 V |
85 Cel |
-40 Cel |
R-PBCC-N2 |
UNIDIRECTIONAL |
18 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
IEC-61000-4-2 |
|||||||||||||||||||||||
|
Nexperia |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
28 V |
AVALANCHE |
.03 uA |
1 |
24 V |
CHIP CARRIER |
24 V |
150 Cel |
-55 Cel |
R-PBCC-N2 |
BIDIRECTIONAL |
.23 pF |
17 V |
24.5 V |
SILICON |
31.5 V |
AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5 |
|||||||||||||||||||||
|
NXP Semiconductors |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
6 |
YES |
SQUARE |
PLASTIC/EPOXY |
COMMON ANODE, 5 ELEMENTS |
28 W |
5.6 V |
AVALANCHE |
5 |
CHIP CARRIER |
Transient Suppressors |
3.3 V |
150 Cel |
S-PBCC-N6 |
1 |
UNIDIRECTIONAL |
Not Qualified |
9.5 V |
5.3 V |
30 |
260 |
SILICON |
5.9 V |
Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.
Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:
1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.
2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.
3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.
4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.
Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.