BOTTOM Transient Suppression Devices 1,197

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

TPD1E0B04DPLR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

15 W

6.7 V

AVALANCHE

.01 uA

1

CHIP CARRIER

3.6 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

7.2 V

5.5 V

e4

30

260

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD203B102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

115 W

AVALANCHE

1

CHIP CARRIER

12 V

125 Cel

-55 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

13.5 V

e4

SILICON

PESD5V0L2UM,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

30 W

6.8 V

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

TIN

R-PBCC-N3

1

UNIDIRECTIONAL

ANODE

Not Qualified

.25 W

6.46 V

e3

30

260

SILICON

7.14 V

TVS3300YZFR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

AVALANCHE

.15 uA

GRID ARRAY

33 V

125 Cel

-40 Cel

TIN SILVER COPPER

S-PBGA-B4

1

UNIDIRECTIONAL

40 V

34 V

e1

30

260

SILICON

39 V

IEC-61000-4-2, 4-4, 4-5; IEC-61643-321

PESD5V0S1UL,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

6.8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

TIN

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

20 V

6.4 V

e3

30

260

SILICON

7.2 V

TPD1E04U04DPYT

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

19 W

6.2 V

AVALANCHE

.01 uA

1

CHIP CARRIER

3.6 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

5.3 V

4.5 V

e4

NOT SPECIFIED

260

SILICON

7.5 V

IEC-61000-4-2, 4-4, 4-5

ESD11N5.0ST5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

5.8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

125 Cel

-40 Cel

R-XBCC-N2

1

BIDIRECTIONAL

Not Qualified

.25 W

LOW CAPACITANCE

12 V

5.8 V

30

260

SILICON

ESD221U102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

60 W

AVALANCHE

1

CHIP CARRIER

5.3 V

125 Cel

-55 Cel

GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

5.7 V

e4

SILICON

7.5 V

IEC-61000-4-5

RCLAMP1521PQTCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

120 W

AVALANCHE

1 uA

1

15 V

CHIP CARRIER

15 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

35 V

16.7 V

e4

260

SILICON

AEC-Q100; IEC-61000-4-2, 4-4

PESD5V0X2UMBYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

5 V

150 Cel

-65 Cel

TIN

R-PBCC-N3

1

UNIDIRECTIONAL

ANODE

IEC-61643-321

7.5 V

e3

30

260

SILICON

10 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

ESD130B1W0201E6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

27.5 W

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

SILICON

IEC-61000-4-2, 4-4, 4-5

SZESD7410N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1 uA

1

8 V

CHIP CARRIER

8 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

19.4 V

10 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

SZESD7551N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE

5 V

e4

30

260

SILICON

7.5 V

AEC-Q101; IEC-61000-4-2, 4-5

ESD110B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

58 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

18.5 V

125 Cel

-40 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

44 V

e4

SILICON

29 V

ESDA13P70-1U1M

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1300 W

AVALANCHE

1

CHIP CARRIER

12 V

150 Cel

-55 Cel

NICKEL PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

12.5 V

e4

260

SILICON

IEC-61000-4-2

ESD113B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.6 V

125 Cel

-40 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

e4

SILICON

SP1250-01ETG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5.5 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

10 V

5.1 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2,4-4,4-5

ESD218B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

67 W

AVALANCHE

1

CHIP CARRIER

24 V

150 Cel

-55 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

24.3 V

e4

SILICON

30 V

IEC-61000-4-2, 4-4, 4-5

LFTVS18-1F3

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

350 W

17 V

AVALANCHE

1

GRID ARRAY

Transient Suppressors

125 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

R-PBGA-B4

UNIDIRECTIONAL

Not Qualified

19 V

16 V

e1

30

260

SILICON

18 V

NSPU3051N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1 uA

1

5.5 V

CHIP CARRIER

5.5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY

9.5 V

5.7 V

e4

30

260

SILICON

9.1 V

IEC-61000-4-2, 4-5

PESD12VS1UL,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

15 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

12 V

150 Cel

TIN

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

35 V

14.7 V

e3

30

260

SILICON

15.3 V

PESD18VF1BSFYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

18 V

125 Cel

-45 Cel

R-PBCC-N2

BIDIRECTIONAL

IEC-61643-321

19 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-60134; IEC-61000-4-2; IEC-61000-4-5

ESD3V3U1U02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

1

UNIDIRECTIONAL

12 V

5 V

e4

SILICON

ESDALC5-1BM2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

13 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

5 V

e4

30

260

SILICON

8 V

ESDAVLC8-1BT2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

30 W

17 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

Not Qualified

8.5 V

e4

30

260

SILICON

PESD5V0C1USFYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

1

UNIDIRECTIONAL

IEC-61643-321

5.5 V

30

260

SILICON

IEC-60134; IEC-61000-4-2, 4-5

RCLAMP0512TQTCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

170 W

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

NICKEL GOLD

R-PBCC-N3

1

UNIDIRECTIONAL

6.5 V

e4

260

SILICON

11.5 V

AEC-Q100; IEC-61000-4-2, 4-4, 4-5

ESD105B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.5 V

125 Cel

-55 Cel

R-PBCC-N2

1

BIDIRECTIONAL

22 V

SILICON

14 V

ESDALC6V1-1BU2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.1 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

6.1 V

e4

30

260

SILICON

RCLAMP2451ZATFT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

32 W

27.5 V

AVALANCHE

.05 uA

1

24 V

CHIP CARRIER

24 V

85 Cel

-40 Cel

NICKEL GOLD

R-XBCC-N2

1

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

8 V

25.5 V

e4

260

SILICON

31 V

IEC-61000-4-2

PESD5V0C1USF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

IEC-61643-321

5.5 V

SILICON

IEC-60134; IEC-61000-4-2, 4-5

RCLAMP0564P.TNT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

5

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N5

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6.5 V

e4

260

SILICON

10.5 V

IEC-61000-4-2

NSPM0061MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.3 V

AVALANCHE

1 uA

1

6.3 V

CHIP CARRIER

6.3 V

150 Cel

-65 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

11.5 V

6.5 V

30

260

SILICON

9 V

IEC-61000-4-2, 4-5

PESD36VS1UL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

AVALANCHE

1

CHIP CARRIER

36 V

150 Cel

-55 Cel

Tin (Sn)

R-PBCC-N2

1

UNIDIRECTIONAL

IEC-61643-321

38.2 V

e3

30

260

SILICON

39.8 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

RCLAMP0531T.TCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

80 W

9.3 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

Not Qualified

12 V

6 V

e4

260

SILICON

11 V

SP3130-01ETG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

28 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

SZESD7461N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

16.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

16 V

150 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

39 V

16.5 V

30

260

SILICON

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

VCUT10A1-SD0-G4-08

Vishay Intertechnology

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

72 W

12 V

AVALANCHE

.05 uA

1

10 V

CHIP CARRIER

10 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

18 V

11 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

13 V

IEC-61000-4-2,4-5

ESD3V3U1U02LSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.3 V

125 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

12 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESDSLC5V0LB-TP

Micro Commercial Components

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

80 W

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

20 V

6 V

e3

10

260

SILICON

9 V

IEC-61000-4-2, 4-4, 4-5

PESD5V0H1BSF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

6 V

SILICON

IEC-60134

PESD5V0H1BSFZ

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

10 V

AVALANCHE

.05 uA

1

5 V

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

5 V

6 V

SILICON

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

UCLAMP1211P.TCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

200 W

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

12 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

Not Qualified

28.5 V

13.3 V

e4

260

SILICON

ACPDUC5V0R-HF

Comchip Technology

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

154 W

AVALANCHE

.09 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

14 V

5.6 V

SILICON

9.4 V

AEC-Q101, IEC-61000-4-2

CPDQC3V3T-HF

Comchip Technology

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

180 W

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

3.6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

4.6 V

IEC-61000-4-2

D12V0H1U2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

14.525 V

AVALANCHE

.05 uA

1

12 V

CHIP CARRIER

12 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

UNIDIRECTIONAL

.25 W

23 V

13.3 V

e4

260

SILICON

15.75 V

IEC-61000-4-2

PESD24VF1BLYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

24 V

150 Cel

-55 Cel

Tin (Sn)

R-PBCC-N2

1

BIDIRECTIONAL

IEC-61643-321

24.5 V

e3

30

260

SILICON

31.5 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

RCLAMP3324P.TNT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.05 uA

1

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N10

1

UNIDIRECTIONAL

LOW CAPACITANCE

4.5 V

e4

260

SILICON

AEC-Q100; IEC-61000-4-2, 4-4, 4-5

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.