BOTTOM Transient Suppression Devices 1,197

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

NSPM0101MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.5 uA

1

10 V

CHIP CARRIER

10 V

150 Cel

-65 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

20 V

12 V

30

260

SILICON

IEC-61000-4-2, 4-5

NSPM2051MUT3G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.05 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-65 Cel

R-PBCC-N2

1

UNIDIRECTIONAL

10.5 V

5.1 V

260

SILICON

7 V

IEC-61000-4-2, 4-5

NSPU3062N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.9 V

AVALANCHE

1 uA

1

6.3 V

CHIP CARRIER

6.3 V

150 Cel

-65 Cel

R-PBCC-N2

UNIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY

8.7 V

6.4 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9.5 V

IEC-61000-4-2, 4-5

ESDM1031MX4T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5.2 V

AVALANCHE

.5 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

TIN COPPER SILVER

R-PBCC-N2

1

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

9.6 V

4.6 V

30

260

SILICON

6.3 V

IEC-61000-4-2, 4-5

ESDM1051MX4T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.8 V

AVALANCHE

.1 uA

1

5.5 V

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

10 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

NSPU3071N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

8.4 V

AVALANCHE

1 uA

1

7.9 V

CHIP CARRIER

7.9 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY

9.6 V

7.95 V

e4

30

260

SILICON

8.8 V

IEC-61000-4-2, 4-5

FESD05P30ZL

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

50 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

TIN

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

PRSM-NOM

6.2 V

e3

30

260

SILICON

IEC-61000-4-5

ESDM3033N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.05 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

8.2 V

5.1 V

SILICON

7 V

IEC61000-4-2

NSPM2052MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-65 Cel

R-PBCC-N3

UNIDIRECTIONAL

CATHODE

9 V

5.1 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

7 V

IEC-61000-4-2, 4-5

ESDM2033MX4T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

6.5 V

3.68 V

e3

30

260

SILICON

6.5 V

IEC-61000-4-2

NSPU2131MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

15.5 V

AVALANCHE

.5 uA

1

13.5 V

CHIP CARRIER

13.5 V

150 Cel

-65 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

23 V

13.6 V

30

260

SILICON

17.5 V

IEC-61000-4-2,4-5

ESDM1131MX4T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

TIN COPPER SILVER

R-PBCC-N2

1

BIDIRECTIONAL

7 V

4 V

30

260

SILICON

6 V

IEC-61000-4-2

ESDM1121MX4T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

14 V

AVALANCHE

.5 uA

1

12 V

CHIP CARRIER

12 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-5

TVS5501V10MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.5 uA

1

10 V

CHIP CARRIER

10 V

150 Cel

-65 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

20 V

12 V

30

260

SILICON

IEC-61000-4-2, 4-5

NSPU2101MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

12 V

AVALANCHE

.1 uA

1

10 V

CHIP CARRIER

10 V

150 Cel

-65 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

18.1 V

11.4 V

30

260

SILICON

12.6 V

IEC-61000-4-2, 4-5

SNSPM2051MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.05 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-65 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

11 V

5.1 V

30

260

SILICON

7 V

IEC-61000-4-2, 4-5

ESDM2021MX4T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4.5 V

AVALANCHE

.1 uA

1

2 V

CHIP CARRIER

2 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

.313 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

6.4 V

3.7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

5.7 V

IEC-61000-4-2

ESDL3552PFCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 3 ELEMENTS

10.2 V

AVALANCHE

.05 uA

3

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

MATTE TIN

R-PBCC-N3

1

UNIDIRECTIONAL

ISOLATED

.3 W

EXCELLENT CLAMPING CAPABILITY

18 V

6.5 V

e3

30

260

SILICON

11.5 V

IEC-61000-4-2, 4-5

ESDM3032MXT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4.9 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

8.5 V

4.1 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

5.7 V

IEC-61000-4-2, 4-5

CSPESD304G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

AVALANCHE

4

GRID ARRAY

TIN SILVER COPPER

R-PBGA-B5

UNIDIRECTIONAL

Not Qualified

.2 W

5.5 V

e1

SILICON

ESDM3051MXT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.05 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

8.2 V

5.1 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

7 V

IEC-61000-4-2, 4-5

ESDL2031MX4T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

72 W

6.8 V

AVALANCHE

.05 uA

1

4 V

CHIP CARRIER

4 V

125 Cel

-55 Cel

R-PBCC-N2

1

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

7.4 V

5.1 V

30

260

SILICON

8.5 V

IEC-61000-4-2, 4-4, 4-5

ESD6116

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

1.3 V

AVALANCHE

1

GRID ARRAY

10 V

85 Cel

-30 Cel

TIN SILVER COPPER

S-PBGA-B4

1

UNIDIRECTIONAL

20 V

16 V

e1

260

SILICON

IEC-61000-4-2

CM6136

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

GRID ARRAY

S-PBGA-B4

UNIDIRECTIONAL

Not Qualified

15.5 V

SILICON

ESDL4151PFCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

17.5 V

AVALANCHE

1 uA

1

15 V

CHIP CARRIER

15 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

24.5 V

15.5 V

SILICON

19.5 V

IEC-61000-4-2, 4-5

NSPM3042MXT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5 V

AVALANCHE

.5 uA

1

4.8 V

CHIP CARRIER

4.8 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY

8 V

4.55 V

e4

30

260

SILICON

6 V

IEC-61000-4-2, 4-5

NSPM1042MUTBG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4.7 V

AVALANCHE

.1 uA

1

4.8 V

CHIP CARRIER

4.8 V

150 Cel

-65 Cel

R-PBCC-N2

BIDIRECTIONAL

9.5 V

4.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

5.5 V

IEC-61000-4-2, 4-5

ESDM1031

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5.2 V

AVALANCHE

.5 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

9 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

NSP8501V5MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-65 Cel

R-PBCC-N2

UNIDIRECTIONAL

11.5 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9 V

IEC-61000-4-2, 4-5

CSPESD304

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

AVALANCHE

4

GRID ARRAY

TIN LEAD

R-PBGA-B5

UNIDIRECTIONAL

Not Qualified

.2 W

5.5 V

e0

SILICON

NSPM3041MXT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.1 V

AVALANCHE

.1 uA

1

4.5 V

CHIP CARRIER

4.5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY

8.5 V

5.3 V

e4

30

260

SILICON

7.5 V

IEC-61000-4-2, 4-5

NZL5V6AUA3

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

COMMON ANODE, 2 ELEMENTS

ZENER

2

CHIP CARRIER

R-CBCC-N3

1

UNIDIRECTIONAL

ANODE

Not Qualified

5.3 V

260

SILICON

5.9 V

NSPM2051MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.05 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-65 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

10.5 V

5.1 V

30

260

SILICON

7 V

IEC-61000-4-2, 4-5

ESD6100

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

AVALANCHE

.1 uA

1

3 V

GRID ARRAY

3 V

85 Cel

-40 Cel

TIN SILVER COPPER

S-PBGA-B4

1

UNIDIRECTIONAL

9.8 V

6 V

e1

30

260

SILICON

IEC-61000-4-2

ESDM1051

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.8 V

AVALANCHE

.1 uA

1

5.5 V

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

10 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

ESDM2032MX4T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5.2 V

AVALANCHE

.5 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

.313 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

8.2 V

3.7 V

e3

30

260

SILICON

6.7 V

IEC-61000-4-2, 4-5

ESDM3551MXT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.3 V

AVALANCHE

.1 uA

1

5.5 V

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

8.2 V

5.6 V

e4

30

260

SILICON

7 V

IEC-61000-4-2, 4-5; ISO 10605

ESDL1531

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.05 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

5.5 V

SILICON

8.6 V

IEC-61000-4-2

PACDN1408CG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 8 ELEMENTS

AVALANCHE

8

GRID ARRAY

Transient Suppressors

5.5 V

TIN SILVER COPPER

R-PBGA-B10

1

UNIDIRECTIONAL

Not Qualified

12 V

e1

30

260

SILICON

TVS8501V6MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.3 V

AVALANCHE

1 uA

1

6.3 V

CHIP CARRIER

6.3 V

150 Cel

-65 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

11.5 V

6.5 V

30

260

SILICON

9 V

IEC-61000-4-2, 4-5

ESDM3051N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.05 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

8.2 V

5.1 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

7 V

IEC-61000-4-2, 4-5

ESDL3552BPFCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 3 ELEMENTS

10.2 V

AVALANCHE

.05 uA

3

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N3

1

UNIDIRECTIONAL

ISOLATED

.3 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

18 V

6.5 V

NOT SPECIFIED

260

SILICON

11.5 V

IEC-61000-4-2, 4-5

NSPM1041BMUTBG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5.25 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

10.8 V

4.5 V

e4

30

260

SILICON

6 V

IEC-61000-4-2, 4-5

NSPM0051MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-65 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

UNIDIRECTIONAL

11.5 V

6 V

30

260

SILICON

9 V

IEC-61000-4-2, 4-5

NSP8501V6MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.3 V

AVALANCHE

1 uA

1

6.3 V

CHIP CARRIER

6.3 V

150 Cel

-65 Cel

R-PBCC-N2

UNIDIRECTIONAL

11.5 V

6.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9 V

IEC-61000-4-2, 4-5

CM6116

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

1.3 V

AVALANCHE

1

GRID ARRAY

10 V

85 Cel

-30 Cel

S-PBGA-B4

UNIDIRECTIONAL

20 V

16 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

PACDN1404CG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

AVALANCHE

4

GRID ARRAY

Transient Suppressors

5.5 V

TIN SILVER COPPER

R-PBGA-B6

UNIDIRECTIONAL

Not Qualified

12 V

e1

SILICON

ESDL1531MX4T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.05 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

6.5 V

5.5 V

NOT SPECIFIED

260

SILICON

8.6 V

IEC-61000-4-2, 4-5

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.