BOTTOM Transient Suppression Devices 1,197

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

ESD5581MXT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.2 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

EXCELLENT CLAMPING CAPABILITY

12 V

5.2 V

e4

30

260

SILICON

7.5 V

IEC-61000-4-2

ESD8101FCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.9 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

5.5 V

SILICON

8.6 V

IEC-61000-4-2

CM1242-07CP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

7.6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

R-XBCC-N2

BIDIRECTIONAL

Not Qualified

9.8 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9 V

ESD7471N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.3 V

150 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY

15 V

7 V

30

260

SILICON

IEC-61000-4-2, 4-5

ESD8472BMUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

9.5 V

AVALANCHE

.01 uA

1

5.3 V

CHIP CARRIER

5.3 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE, ULTRA LOW CAPACITANCE

20 V

7 V

SILICON

12 V

IEC-61000-4-2, 4-5

CM1204-03CP

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

6 V

AVALANCHE

4

GRID ARRAY

Transient Suppressors

TIN SILVER COPPER

R-PBGA-B5

UNIDIRECTIONAL

Not Qualified

.2 W

15 V

e1

260

SILICON

SZESD7424MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

24 V

150 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

27 V

30

260

SILICON

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

ESD5101AFCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

6.5 V

5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

6.5 V

IEC-61000-4-2

ESD7462N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

16 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

16.5 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

28 V

IEC-61000-4-2, 4-4, 4-5

ESDU401-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

40 W

44 V

AVALANCHE

.05 uA

1

40 V

CHIP CARRIER

40 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

50 V

41 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

46 V

IEC61000-4-2

ESDZV5-1BV2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

45 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

DSILC6-4F2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

6

YES

SQUARE

PLASTIC/EPOXY

SINGLE

120 W

6 V

AVALANCHE

1

GRID ARRAY

Transient Suppressors

5 V

125 Cel

S-PBGA-B6

3

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

6 V

SILICON

ESDZV5H-1BU2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

40 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

ESDV5-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

5.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

8.5 V

IEC-61000-4-2

ESDX051-2BU3

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 3 ELEMENTS

15 W

6.8 V

AVALANCHE

.1 uA

3

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N3

BIDIRECTIONAL

LOW CAPACITANCE

15 V

6 V

SILICON

10 V

IEC-61000-4-2

LFTVS7-1F3

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

350 W

7 V

AVALANCHE

1

GRID ARRAY

Transient Suppressors

125 Cel

R-PBGA-B4

UNIDIRECTIONAL

Not Qualified

10 V

7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

EMIF10-LCD03F3

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

24

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

AVALANCHE

2

GRID ARRAY

125 Cel

R-PBGA-B24

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

14 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESDL20-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

90 W

AVALANCHE

1

CHIP CARRIER

20 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

22 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

25 V

IEC-61000-4-2

ESDZL5-1F4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

60 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

LFTVS10-1F3

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

350 W

10 V

AVALANCHE

1

GRID ARRAY

Transient Suppressors

125 Cel

S-PBGA-B4

UNIDIRECTIONAL

Not Qualified

13 V

10 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESDL031-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

45 W

5.5 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

7 V

5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

6.6 V

IEC61000-4-2

SMX1J7.5A-TR

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

85 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

7.5 V

150 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

Not Qualified

14 V

8.3 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

HDMIULC6-4F3

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

70 W

7.5 V

AVALANCHE

1

GRID ARRAY

Transient Suppressors

125 Cel

TIN SILVER COPPER

R-PBGA-B10

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

6 V

e1

30

260

SILICON

9 V

ESDZV5-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

70 W

AVALANCHE

.1 uA

1

5.5 V

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

ESDALC5-1BT2Y

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

8 V

AVALANCHE

.06 uA

1

CHIP CARRIER

125 Cel

-50 Cel

R-PBCC-N2

1

BIDIRECTIONAL

12.5 V

5.8 V

SILICON

11 V

AEC-Q101; IEC-61000-4-2; ISO 7637-3; ISO 10605

ESDA5-1F4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

110 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

5.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

ESDALC6V1F2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

25 W

6.65 V

AVALANCHE

4

GRID ARRAY

Transient Suppressors

125 Cel

MATTE TIN

R-PBGA-B5

1

UNIDIRECTIONAL

Not Qualified

6.1 V

e3

SILICON

7.2 V

ESDALC20-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

90 W

23 V

AVALANCHE

.01 uA

1

20 V

CHIP CARRIER

20 V

150 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

37 V

22 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC61000-4-2

ESDAVLC6-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

8 V

AVALANCHE

.1 uA

1

3 V

CHIP CARRIER

3 V

85 Cel

-30 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

10 V

IEC61000-4-2

USBULC6-2F3

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

60 W

7.5 V

AVALANCHE

1

GRID ARRAY

Transient Suppressors

125 Cel

MATTE TIN

R-PBGA-B4

1

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

6 V

e3

SILICON

9 V

ESDAVLC6V1-1BM2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

125 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

3

BIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

6.1 V

e4

30

260

SILICON

ESDA14V2-1BF3

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

50 W

16.1 V

AVALANCHE

1

GRID ARRAY

Transient Suppressors

12 V

125 Cel

-40 Cel

Matte Tin (Sn)

R-XBGA-B2

BIDIRECTIONAL

Not Qualified

14.2 V

e3

30

260

SILICON

18 V

ESDAXLC18-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

50 W

AVALANCHE

1

CHIP CARRIER

18 V

150 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

ESDAULC6-3BF2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

7.6 V

AVALANCHE

4

GRID ARRAY

Transient Suppressors

150 Cel

MATTE TIN

R-PBGA-B4

1

BIDIRECTIONAL

Not Qualified

HIGH RELIABILITY, ULTRA LOW CAPACITANCE

6 V

e3

SILICON

9.2 V

ESDA6V1-5T6

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

35 W

6.65 V

AVALANCHE

5

CHIP CARRIER

Transient Suppressors

125 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

6.1 V

e4

30

260

SILICON

7.2 V

ESDARF03-1BF3

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

60 W

AVALANCHE

1

GRID ARRAY

3 V

85 Cel

-30 Cel

S-PBGA-B4

BIDIRECTIONAL

6 V

SILICON

IEC-61000-4-2

ESDAVLC8-1BU2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

17 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

125 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

8.5 V

e4

30

260

SILICON

HSP051-4N10

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

9

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5.8 V

AVALANCHE

.1 uA

1

3.6 V

CHIP CARRIER

150 Cel

-40 Cel

R-PBCC-N9

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

10 V

4.5 V

SILICON

IEC61000-4-2

ESDALC14V2-1U2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

15.6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

125 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

e4

30

260

SILICON

ESDAVLC8-1BT2Y

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

11 V

AVALANCHE

.05 uA

1

3 V

CHIP CARRIER

3 V

125 Cel

-50 Cel

R-PBCC-N2

1

BIDIRECTIONAL

HIGH RELIABILITY, LOW CAPACITANCE

8.5 V

SILICON

14 V

AEC-Q101, IEC-61000-4-2

ESDALC6V1-1BM2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

140 W

8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

125 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

3

BIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

6.1 V

e4

30

260

SILICON

8 V

ESDA18-1F2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

700 W

17 V

AVALANCHE

2

GRID ARRAY

Transient Suppressors

16 V

125 Cel

S-PBGA-B4

UNIDIRECTIONAL

Not Qualified

16 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

18 V

ESDA14V2-4BF1

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

5

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

50 W

16.1 V

AVALANCHE

4

GRID ARRAY

Transient Suppressors

12 V

125 Cel

S-PBGA-B5

BIDIRECTIONAL

Not Qualified

14.2 V

SILICON

18 V

ESDA17P50-1U1M

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1200 W

16.4 V

AVALANCHE

.05 uA

2

15 V

CHIP CARRIER

15 V

150 Cel

-55 Cel

R-PBCC-N2

1

UNIDIRECTIONAL

26.5 V

15.6 V

SILICON

IEC61000-4-2

ESDA8P80-1U1M

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1100 W

AVALANCHE

1

CHIP CARRIER

6.3 V

150 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

6.9 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

ESDA14V2-2BF3

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

50 W

16.1 V

AVALANCHE

3

GRID ARRAY

Transient Suppressors

12 V

125 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

S-PBGA-B4

BIDIRECTIONAL

Not Qualified

14.2 V

e1

30

260

SILICON

18 V

ESDAVLC5-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20 W

7.15 V

AVALANCHE

.1 uA

1

5.3 V

CHIP CARRIER

5.3 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

11.7 V

5.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

8.5 V

IEC61000-4-2

USBULC6-2F7

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

50 W

7.25 V

AVALANCHE

.07 uA

1

3 V

GRID ARRAY

150 Cel

-40 Cel

S-PBGA-B4

UNIDIRECTIONAL

HIGH RELIABILITY

5.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9 V

IEC61000-4-2

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.