BOTTOM Transient Suppression Devices 1,197

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

ESD051-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

110 W

AVALANCHE

.07 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

11 V

5.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC61000-4-2

ESDAULC5-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

140 W

7.15 V

AVALANCHE

.07 uA

1

3 V

CHIP CARRIER

3 V

150 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

13.5 V

5.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

8.5 V

IEC-61000-4-2

ESDALC6V1C2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

25 W

6.65 V

AVALANCHE

4

GRID ARRAY

Transient Suppressors

R-PBGA-B5

UNIDIRECTIONAL

Not Qualified

6.1 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

7.2 V

ESDALC14-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

100 W

AVALANCHE

1

CHIP CARRIER

12 V

150 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

13 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

USBULC6-3F3

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

UNSPECIFIED

SINGLE

50 W

AVALANCHE

.1 uA

1

3 V

GRID ARRAY

3 V

125 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

S-XBGA-B4

UNIDIRECTIONAL

Not Qualified

ULTRA-LOW CAPACITANCE

6 V

e1

30

260

SILICON

IEC-61000-4-2, 4-4

USBULC6-2F3

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

60 W

7.5 V

AVALANCHE

1

GRID ARRAY

Transient Suppressors

125 Cel

MATTE TIN

R-PBGA-B4

1

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

6 V

e3

SILICON

9 V

ESDAVLC6V1-1BM2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

125 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

3

BIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

6.1 V

e4

30

260

SILICON

ESDA14V2-1BF3

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

50 W

16.1 V

AVALANCHE

1

GRID ARRAY

Transient Suppressors

12 V

125 Cel

-40 Cel

Matte Tin (Sn)

R-XBGA-B2

BIDIRECTIONAL

Not Qualified

14.2 V

e3

30

260

SILICON

18 V

ESDAXLC18-1BF4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

50 W

AVALANCHE

1

CHIP CARRIER

18 V

150 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

ESDAULC6-3BF2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

7.6 V

AVALANCHE

4

GRID ARRAY

Transient Suppressors

150 Cel

MATTE TIN

R-PBGA-B4

1

BIDIRECTIONAL

Not Qualified

HIGH RELIABILITY, ULTRA LOW CAPACITANCE

6 V

e3

SILICON

9.2 V

ESDA6V1-5T6

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

35 W

6.65 V

AVALANCHE

5

CHIP CARRIER

Transient Suppressors

125 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

6.1 V

e4

30

260

SILICON

7.2 V

ESDARF03-1BF3

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

60 W

AVALANCHE

1

GRID ARRAY

3 V

85 Cel

-30 Cel

S-PBGA-B4

BIDIRECTIONAL

6 V

SILICON

IEC-61000-4-2

ESDAVLC8-1BU2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

17 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

125 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

8.5 V

e4

30

260

SILICON

HSP051-4N10

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

9

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5.8 V

AVALANCHE

.1 uA

1

3.6 V

CHIP CARRIER

150 Cel

-40 Cel

R-PBCC-N9

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

10 V

4.5 V

SILICON

IEC61000-4-2

ESDALC14V2-1U2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

15.6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

125 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

e4

30

260

SILICON

ESDAVLC8-1BT2Y

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

11 V

AVALANCHE

.05 uA

1

3 V

CHIP CARRIER

3 V

125 Cel

-50 Cel

R-PBCC-N2

1

BIDIRECTIONAL

HIGH RELIABILITY, LOW CAPACITANCE

8.5 V

SILICON

14 V

AEC-Q101, IEC-61000-4-2

ESDALC6V1-1BM2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

140 W

8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

125 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

3

BIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

6.1 V

e4

30

260

SILICON

8 V

ESDA18-1F2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

700 W

17 V

AVALANCHE

2

GRID ARRAY

Transient Suppressors

16 V

125 Cel

S-PBGA-B4

UNIDIRECTIONAL

Not Qualified

16 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

18 V

PTVS15VZ1USK

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1900 W

AVALANCHE

1

CHIP CARRIER

15 V

125 Cel

-40 Cel

R-PBCC-N2

1

UNIDIRECTIONAL

CATHODE

IEC-61643-321

16.7 V

30

260

SILICON

19.4 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PTVS10VZ1USK

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

2000 W

12 V

AVALANCHE

.2 uA

1

10 V

CHIP CARRIER

10 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

CATHODE

27 V

11.1 V

SILICON

12.9 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PTVS26VZ1USK

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1850 W

31.1 V

AVALANCHE

.2 uA

1

26 V

CHIP CARRIER

26 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

CATHODE

57.5 V

28.9 V

SILICON

33.4 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PTVS18VZ1USK,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1800 W

AVALANCHE

1

CHIP CARRIER

18 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

CATHODE

IEC-61643-321

20 V

SILICON

23.2 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PTVS7V5Z1USK

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

2200 W

9 V

AVALANCHE

.2 uA

1

7.5 V

CHIP CARRIER

7.5 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

CATHODE

22 V

8.33 V

SILICON

9.65 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

934061198115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

6.8 V

AVALANCHE

.025 uA

4

5 V

CHIP CARRIER

5 V

150 Cel

-65 Cel

R-PBCC-N6

UNIDIRECTIONAL

LOW CAPACITANCE

MO-252

13 V

6.46 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

7.14 V

AEC-Q101

PTVS12VZ1USK

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1900 W

14.4 V

AVALANCHE

.2 uA

1

12 V

BOTTOM

12 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

CATHODE

29 V

13.3 V

SILICON

15.4 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PTVS5V0Z1USKN

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1200 W

7 V

AVALANCHE

1 uA

1

5 V

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

CATHODE

18 V

6.4 V

SILICON

7.8 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PTVS5V0Z1USK

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1200 W

7 V

AVALANCHE

1 uA

1

5 V

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

CATHODE

18 V

6.4 V

SILICON

7.8 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PTVS18VZ1USK

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1800 W

AVALANCHE

1

CHIP CARRIER

18 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

CATHODE

IEC-61643-321

20 V

SILICON

23.2 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PTVS12VZ1USKN

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

2100 W

14.4 V

AVALANCHE

.2 uA

1

12 V

CHIP CARRIER

12 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

CATHODE

32 V

13.3 V

SILICON

15.4 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PTVS20VZ1USK

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

2000 W

23.8 V

AVALANCHE

.1 uA

1

20 V

CHIP CARRIER

20 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

CATHODE

48.3 V

22.2 V

SILICON

25.4 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

IP4085CX4/LF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

GRID ARRAY

S-PBGA-B4

UNIDIRECTIONAL

Not Qualified

1 W

16 V

SILICON

IP4302CX2/A

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

GRID ARRAY

5 V

85 Cel

-35 Cel

R-PBGA-B2

BIDIRECTIONAL

14 V

SILICON

IEC-60134; IEC-61000-4-2

IP4359CX4/LF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

ZENER

2

GRID ARRAY

S-PBGA-B4

UNIDIRECTIONAL

Not Qualified

6 V

SILICON

9 V

IP4385CX4/LF,135

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

1

GRID ARRAY

Transient Suppressors

S-PBGA-B4

UNIDIRECTIONAL

Not Qualified

.7 W

10 V

7 V

SILICON

IP4385CX4/LF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

GRID ARRAY

5.5 V

85 Cel

-30 Cel

S-PBGA-B4

UNIDIRECTIONAL

Not Qualified

.7 W

7 V

SILICON

IEC-60134; IEC-61000-4-2, 4-5

IP4359CX4/LF-H500,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

ZENER

2

GRID ARRAY

S-PBGA-B4

UNIDIRECTIONAL

6 V

SILICON

9 V

IP4085CX4/LF,135

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

16 V

AVALANCHE

1

GRID ARRAY

Transient Suppressors

S-PBGA-B4

UNIDIRECTIONAL

Not Qualified

1 W

20 V

16 V

SILICON

IP4386CX4/LF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

GRID ARRAY

S-PBGA-B4

UNIDIRECTIONAL

Not Qualified

.7 W

16 V

SILICON

IP4386CX4/P

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

GRID ARRAY

14 V

85 Cel

-30 Cel

S-PBGA-B4

UNIDIRECTIONAL

.7 W

16 V

SILICON

IEC-60134; IEC-61000-4-2, 4-5

IP4387CX4/P

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

GRID ARRAY

8 V

85 Cel

-30 Cel

S-PBGA-B4

UNIDIRECTIONAL

.7 W

10 V

SILICON

IEC-60134; IEC-61000-4-2, 4-5

IP4085CX4/LF/P

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

GRID ARRAY

14 V

85 Cel

-30 Cel

S-PBGA-B4

UNIDIRECTIONAL

1 W

16 V

SILICON

IEC-60134; IEC-61000-4-2, 4-5

IP4387CX4/LF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

GRID ARRAY

S-PBGA-B4

UNIDIRECTIONAL

Not Qualified

.7 W

10 V

SILICON

IP4369CX4

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

8 V

AVALANCHE

.1 uA

2

3 V

GRID ARRAY

3 V

85 Cel

-30 Cel

S-PBGA-B4

1

UNIDIRECTIONAL

4 V

6 V

30

260

SILICON

10 V

IEC-60134; IEC-61000-4-2, 4-5

IP4359CX4/LF-H500

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

7.5 V

ZENER

2

GRID ARRAY

Transient Suppressors

S-PBGA-B4

UNIDIRECTIONAL

Not Qualified

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9 V

PESD9X7.0L

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

AVALANCHE

1

CHIP CARRIER

7 V

150 Cel

TIN

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

7.5 V

e3

SILICON

PESD3V3L2UM

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

30 W

5.6 V

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

Tin (Sn)

R-PBCC-N3

1

UNIDIRECTIONAL

ANODE

Not Qualified

.25 W

5.32 V

e3

30

260

SILICON

5.88 V

PESD3V3V1BCSF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

4.5 V

SILICON

8 V

IEC-60134; IEC-61000-4-2, 4-5

PESD3V3C1BSF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

IEC-61643-321

6 V

SILICON

IEC-60134; IEC-61000-4-2, 4-5

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.