BOTTOM Transient Suppression Devices 1,197

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

PESD5V0C1BSF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

IEC-61643-321

6 V

SILICON

IEC-60134; IEC-61000-4-2, 4-5

PESD5V0F5UF/T1

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

AVALANCHE

5

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N6

UNIDIRECTIONAL

LOW CAPACITANCE, IEC-61643-321

7.5 V

SILICON

10 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD5V0V1BSF,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

8 W

AVALANCHE

1

CHIP CARRIER

5 V

R-PBCC-N2

BIDIRECTIONAL

Not Qualified

6 V

SILICON

10 V

PESD3V3S1UL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

5.6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

Tin (Sn)

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

5.2 V

e3

30

260

SILICON

6 V

PESD5V0F1BSF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

28 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

6 V

SILICON

10 V

IEC-60134; IEC-61000-4-2, 4-5

PESD3V3V4UF,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

16 W

5.6 V

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

TIN

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

MO-252

11 V

5.3 V

e3

30

260

SILICON

5.9 V

SP001213176

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.3 V

125 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

BGF121

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

17.7 V

AVALANCHE

1

GRID ARRAY

Transient Suppressors

10 V

S-PBGA-B4

UNIDIRECTIONAL

Not Qualified

18.7 V

16 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

BGF127

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

9

YES

SQUARE

UNSPECIFIED

COMMON ANODE, 8 ELEMENTS

AVALANCHE

8

GRID ARRAY

Transient Suppressors

5.3 V

TIN SILVER COPPER

S-XBGA-B9

UNIDIRECTIONAL

Not Qualified

17 V

6 V

e1

SILICON

BGF200E6327XUSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

8

YES

SQUARE

UNSPECIFIED

SINGLE

AVALANCHE

1

GRID ARRAY

85 Cel

-40 Cel

S-XBGA-B8

UNIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

BGF127E6328

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

9

YES

SQUARE

UNSPECIFIED

COMMON ANODE, 8 ELEMENTS

AVALANCHE

8

GRID ARRAY

5.3 V

S-XBGA-B9

UNIDIRECTIONAL

6 V

SILICON

BGF119

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

12 V

AVALANCHE

1

GRID ARRAY

Transient Suppressors

8 V

MATTE TIN

S-PBGA-B4

UNIDIRECTIONAL

Not Qualified

13 V

10 V

e3

SILICON

12 V

BGF100E6327XUSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

11

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

GRID ARRAY

85 Cel

-40 Cel

R-XBGA-B11

UNIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

BGF113

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

8

YES

SQUARE

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

GRID ARRAY

S-PBGA-B8

UNIDIRECTIONAL

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SILICON

BGF105

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

8

YES

SQUARE

UNSPECIFIED

SINGLE

AVALANCHE

1

GRID ARRAY

S-XBGA-B8

UNIDIRECTIONAL

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SILICON

BGF100

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

11

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

GRID ARRAY

TIN SILVER COPPER

R-XBGA-B11

UNIDIRECTIONAL

Not Qualified

e1

SILICON

BGF128E6328XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

8

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

AVALANCHE

5

GRID ARRAY

85 Cel

-40 Cel

S-PBGA-B8

BIDIRECTIONAL

SILICON

BGF128

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

8

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

18.5 V

AVALANCHE

5

GRID ARRAY

Transient Suppressors

S-PBGA-B8

BIDIRECTIONAL

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SILICON

BGF113E6328XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

8

YES

SQUARE

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

GRID ARRAY

85 Cel

-40 Cel

S-PBGA-B8

UNIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

BGF200

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

8

YES

SQUARE

UNSPECIFIED

SINGLE

AVALANCHE

1

GRID ARRAY

TIN SILVER COPPER

S-XBGA-B8

UNIDIRECTIONAL

Not Qualified

e1

SILICON

BGF108

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

18

YES

SQUARE

UNSPECIFIED

SINGLE

AVALANCHE

1

GRID ARRAY

TIN SILVER COPPER

S-XBGA-B18

UNIDIRECTIONAL

Not Qualified

e1

SILICON

ESD0P8RFL-E6327

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

50 V

150 Cel

-55 Cel

TIN GOLD

R-XBCC-N4

1

UNIDIRECTIONAL

12 V

e2

260

SILICON

15 V

ESD200-B1-CSP0201E6327

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-40 Cel

R-XBCC-N2

BIDIRECTIONAL

6 V

SILICON

10 V

ESD231-B1-W0201E6327

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

132 W

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

BIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD251B1W0201E6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

72 W

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

6.6 V

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD108-B1-CSP0201

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

18000 W

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

18.5 V

IEC-61000-4-5

ESD8V0L1B02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

8.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

14 V

125 Cel

-55 Cel

R-XBCC-N2

BIDIRECTIONAL

21 V

8.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101

ESD18VU1B-02LS

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

18.5 V

85 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD5V0H1U-02LS

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

200 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

MATTE TIN

R-XBCC-N2

UNIDIRECTIONAL

Not Qualified

40 V

e3

SILICON

ESD5V3L1B-02LRH

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.3 V

R-PBCC-N2

BIDIRECTIONAL

17.2 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

10 V

ESD5V3U4U-HDMI

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

9

YES

RECTANGULAR

UNSPECIFIED

COMMON ANODE, 4 ELEMENTS

6 V

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

5.3 V

R-XBCC-N9

1

UNIDIRECTIONAL

ANODE

Not Qualified

15 V

6 V

SILICON

ESD132-B1-W0201

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

63 W

8.5 V

AVALANCHE

.1 uA

1

5.5 V

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

8 V

6.1 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2,4-4,4-5

ESD113-B1-02ELS

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

36 W

AVALANCHE

1

CHIP CARRIER

3.6 V

125 Cel

-55 Cel

Gold (Au)

R-XBCC-N2

1

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD218B102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

67 W

AVALANCHE

1

CHIP CARRIER

24 V

150 Cel

-55 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

24.3 V

e4

SILICON

30 V

IEC-61000-4-2, 4-4, 4-5

ESD114-U1-02EL

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

5.3 V

125 Cel

-55 Cel

Gold (Au)

R-XBCC-N2

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD8V0L1B-02EL

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

14.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

14 V

125 Cel

-55 Cel

R-XBCC-N2

BIDIRECTIONAL

8.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD3V3XU1BLE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.6 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD3V3XU1USE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD101-B1-02EL

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

AVALANCHE

.02 uA

1

5.5 V

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

Gold (Au)

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

30 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD131-B1-W0201E6327

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

80 W

AVALANCHE

1

CHIP CARRIER

22 V

125 Cel

-55 Cel

R-XBCC-N2

BIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD201-B2-03LRH

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N3

1

BIDIRECTIONAL

LOW CAPACITANCE

SILICON

ESD0P4RFL

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

8

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

50 V

Gold (Au)

R-XBCC-N8

1

UNIDIRECTIONAL

Not Qualified

6 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD5V3S1B-02LRH

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

80 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.3 V

R-PBCC-N2

BIDIRECTIONAL

Not Qualified

11 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD202-B1-CSP01005

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

36 W

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

10 V

IEC-61000-4-2, 4-4, 4-5

ESD218-B1-02ELS

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

67 W

AVALANCHE

1

CHIP CARRIER

24 V

150 Cel

-55 Cel

Gold (Au)

R-XBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

24.3 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

30 V

IEC-61000-4-2, 4-4, 4-5

ESD3V3S1B-02LRH

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD5V3S1B02LRHE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

80 W

AVALANCHE

1

CHIP CARRIER

5.3 V

125 Cel

-55 Cel

R-XBCC-N2

BIDIRECTIONAL

6 V

SILICON

ESD5V3U1U02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.3 V

125 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

12 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.