BOTTOM Transient Suppression Devices 1,197

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

P6KE62CA-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

WIRE

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

GRID ARRAY

53 V

MATTE TIN

O-PALF-W2

1

BIDIRECTIONAL

ISOLATED

Not Qualified

5 W

DO-15

58.9 V

e3

SILICON

65.1 V

P6KE170CA-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

WIRE

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

GRID ARRAY

145 V

MATTE TIN

O-PALF-W2

1

BIDIRECTIONAL

ISOLATED

Not Qualified

5 W

LOW CAPACITANCE

DO-15

162 V

e3

SILICON

179 V

P6KE200CA-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

WIRE

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

CHIP CARRIER

171 V

MATTE TIN

O-PALF-W2

1

BIDIRECTIONAL

ISOLATED

Not Qualified

5 W

DO-15

190 V

e3

SILICON

210 V

P6KE75CA-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

WIRE

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

GRID ARRAY

64.1 V

MATTE TIN

O-PALF-W2

1

BIDIRECTIONAL

ISOLATED

Not Qualified

5 W

DO-15

71.3 V

e3

SILICON

78.8 V

P6KE30A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

WIRE

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

CHIP CARRIER

25.6 V

MATTE TIN

O-PALF-W2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

5 W

DO-15

28.5 V

e3

SILICON

31.5 V

D5V0M1U2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

120 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

UNIDIRECTIONAL

.25 W

6.2 V

e3

260

SILICON

IEC-61000-4-2

D5V0L1B2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

84 W

7 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

14 V

6 V

e3

30

260

SILICON

8 V

IEC-61000-4-2

DESD5V0V1BCSP-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

20 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-65 Cel

NICKEL GOLD

R-XBCC-N2

BIDIRECTIONAL

.25 W

6 V

e4

260

SILICON

10 V

P6KE33A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

WIRE

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

CHIP CARRIER

28.2 V

MATTE TIN

O-PALF-W2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

5 W

DO-15

31.4 V

e3

SILICON

34.7 V

DESD24VF1BLP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

40 W

AVALANCHE

.03 uA

1

24 V

CHIP CARRIER

24 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

BIDIRECTIONAL

.25 W

23 V

25 V

e3

30

260

SILICON

IEC-61000-4-2

DESD10V0X1BD2CSP-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

40 W

15 V

AVALANCHE

1 uA

1

10 V

CHIP CARRIER

10 V

150 Cel

-65 Cel

NICKEL GOLD

R-XBCC-N2

BIDIRECTIONAL

.25 W

5 V

12 V

e4

260

SILICON

18 V

IEC-61000-4-2; MIL-STD-202

D12V0H1U2LP1610-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1000 W

AVALANCHE

1

CHIP CARRIER

12 V

150 Cel

-55 Cel

NICKEL GOLD

R-PBCC-N2

UNIDIRECTIONAL

.3 W

13 V

e4

260

SILICON

IEC-61000-4-2

D5V0L1B2DLP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

84 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-65 Cel

NICKEL GOLD

R-PBCC-N2

BIDIRECTIONAL

.25 W

6 V

e4

260

SILICON

8 V

P6KE170A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

WIRE

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

GRID ARRAY

145 V

MATTE TIN

O-PALF-W2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

5 W

LOW CAPACITANCE

DO-15

162 V

e3

SILICON

179 V

P6KE47A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

WIRE

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

CHIP CARRIER

40.2 V

MATTE TIN

O-PALF-W2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

5 W

DO-15

44.7 V

e3

SILICON

49.4 V

DESD5V0S1BLP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

145 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

6 V

e3

30

260

SILICON

9.5 V

D3V3S1B2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

410 W

5.15 V

AVALANCHE

.5 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

BIDIRECTIONAL

.25 W

9.5 V

3.8 V

e4

260

SILICON

6.5 V

IEC-61000-4-2,4-5; MIL-STD-202

DESD3V3Z1BCSFQ-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

25 W

7 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

R-PBCC-N2

BIDIRECTIONAL

.25 W

11.5 V

5 V

SILICON

9 V

AEC-Q101; IATF 16949; IEC-61000-4-2

D3V3S1U2LP1610-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.3 W

3.8 V

e4

30

260

SILICON

IEC-61000-4-2

D1213A-01LP4-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

HIGH RELIABILITY

10 V

6 V

e4

30

260

SILICON

AEC-Q101

D3V3H1U2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

350 W

AVALANCHE

1

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

4 V

e4

30

260

SILICON

IEC-61000-4-2

P6KE18A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

WIRE

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

GRID ARRAY

15.3 V

MATTE TIN

O-PALF-W2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

5 W

LOW CAPACITANCE

DO-15

17.1 V

e3

SILICON

18.9 V

P6KE16A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

WIRE

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

GRID ARRAY

13.6 V

MATTE TIN

O-PALF-W2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

5 W

LOW CAPACITANCE

DO-15

15.2 V

e3

SILICON

16.8 V

DESD12V0S1BL-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

CHIP CARRIER

12 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

BIDIRECTIONAL

.25 W

15 V

e4

260

SILICON

IEC-61000-4-2

D5V0M2B3LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

130 W

AVALANCHE

2

CHIP CARRIER

5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N3

BIDIRECTIONAL

ANODE

.25 W

5.5 V

e4

260

SILICON

9.5 V

IEC-61000-4-2

P6KE22A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

WIRE

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

CHIP CARRIER

18.8 V

MATTE TIN

O-PALF-W2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

5 W

DO-15

20.9 V

e3

SILICON

23.1 V

P6KE180A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

WIRE

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

GRID ARRAY

154 V

MATTE TIN

O-PALF-W2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

5 W

LOW CAPACITANCE

DO-15

171 V

e3

SILICON

189 V

DESD6V8DLP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

70 W

6.8 V

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

5.25 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N3

1

UNIDIRECTIONAL

ANODE

Not Qualified

.385 W

LOW CAPACITANCE

6.4 V

e4

30

260

SILICON

7.2 V

D5V0L1B2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

84 W

7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

11.5 V

6 V

e3

30

260

SILICON

8 V

D5V0S1B2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

440 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

BIDIRECTIONAL

.25 W

6 V

e4

30

260

SILICON

9 V

IEC-61000-4-2

P6KE33CA-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

WIRE

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

CHIP CARRIER

28.2 V

MATTE TIN

O-PALF-W2

1

BIDIRECTIONAL

ISOLATED

Not Qualified

5 W

DO-15

31.4 V

e3

SILICON

34.7 V

DESD5V0S1BLD-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

130 W

7.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

14 V

5.5 V

e4

30

260

SILICON

9.5 V

IEC-61000-4-5

P6KE68CA-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

WIRE

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

GRID ARRAY

58.1 V

MATTE TIN

O-PALF-W2

1

BIDIRECTIONAL

ISOLATED

Not Qualified

5 W

DO-15

64.6 V

e3

SILICON

71.4 V

P6KE75A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

WIRE

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

GRID ARRAY

64.1 V

MATTE TIN

O-PALF-W2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

5 W

DO-15

71.3 V

e3

SILICON

78.8 V

MAX3203EEBT-T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

6

GRID ARRAY

Other Diodes

150 Cel

-40 Cel

TIN LEAD

R-PBGA-B6

1

UNIDIRECTIONAL

Not Qualified

.273 W

e0

SILICON

MAX3203EEBT+T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

AVALANCHE

6

GRID ARRAY

Tin/Silver/Copper (Sn/Ag/Cu)

R-PBGA-B6

1

UNIDIRECTIONAL

Not Qualified

.273 W

e1

30

260

SILICON

MAX3202EEBT-T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

6

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

4

GRID ARRAY

Other Diodes

150 Cel

-40 Cel

TIN LEAD

S-PBGA-B6

UNIDIRECTIONAL

Not Qualified

1.951 W

e0

SILICON

MAX3205EAWL+T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

9

YES

SQUARE

PLASTIC/EPOXY

SINGLE

.95 V

AVALANCHE

1

GRID ARRAY

Other Diodes

150 Cel

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

S-PBGA-B9

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

e1

30

260

SILICON

MAX3202EEBS+T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

4

GRID ARRAY

Other Diodes

150 Cel

-40 Cel

MATTE TIN

S-PBGA-B4

1

UNIDIRECTIONAL

Not Qualified

.239 W

e3

SILICON

MAX3203EETT-T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

6

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

6

GRID ARRAY

Other Diodes

150 Cel

-40 Cel

TIN LEAD

S-PBGA-B6

1

UNIDIRECTIONAL

Not Qualified

1.951 W

MO-229WEEA

e0

SILICON

MAX3202EEBS-T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

4

GRID ARRAY

Other Diodes

150 Cel

-40 Cel

TIN LEAD

S-PBGA-B4

1

UNIDIRECTIONAL

Not Qualified

.239 W

e0

SILICON

MAX3202EETT-T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

6

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

4

GRID ARRAY

Other Diodes

150 Cel

-40 Cel

TIN LEAD

S-PBGA-B6

1

UNIDIRECTIONAL

Not Qualified

1.951 W

MO-229WEEA

e0

SILICON

MAX3204EEBT+T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

8

GRID ARRAY

Other Diodes

150 Cel

-40 Cel

TIN SILVER COPPER

R-PBGA-B6

1

UNIDIRECTIONAL

Not Qualified

.308 W

e1

30

260

SILICON

MAX3206EEBL+T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

9

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

12

GRID ARRAY

Other Diodes

85 Cel

-40 Cel

TIN SILVER COPPER NICKEL

S-PBGA-B9

1

UNIDIRECTIONAL

Not Qualified

.379 W

e2

30

260

SILICON

MAX3206EETC

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

12

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

12

GRID ARRAY

Other Diodes

150 Cel

-40 Cel

TIN LEAD

S-PBGA-B12

1

UNIDIRECTIONAL

Not Qualified

1.349 W

MO-220WGGB

e0

SILICON

MAX3204EEBT-T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

8

GRID ARRAY

Other Diodes

150 Cel

-40 Cel

TIN LEAD

R-PBGA-B6

1

UNIDIRECTIONAL

Not Qualified

.308 W

e0

SILICON

MAX3206EEBL-T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

9

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

12

GRID ARRAY

Other Diodes

150 Cel

-40 Cel

TIN LEAD

S-PBGA-B9

1

UNIDIRECTIONAL

Not Qualified

.379 W

e0

SILICON

MAX3202EEBS

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

4

GRID ARRAY

Other Diodes

150 Cel

-40 Cel

TIN LEAD

S-PBGA-B4

1

UNIDIRECTIONAL

Not Qualified

.239 W

e0

SILICON

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.