NXP Semiconductors Transient Suppression Devices 2,400+

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

BZW03-C220/22133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

305 V

208 V

SILICON

BZW03-C130/21133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

185 V

124 V

SILICON

BZW03-C160/31113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

224 V

153 V

SILICON

BZW03-C7V5/33133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

3000 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

11.3 V

7 V

SILICON

PESD24VU1UT

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

200 W

27.8 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

24 V

150 Cel

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

76 V

25.4 V

e3

30

260

SILICON

30.3 V

BZT03-C13

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

50 mA

SINGLE

13 V

300 W

ZENER

5 uA

1

LONG FORM

Voltage Reference Diodes

5 %

175 Cel

10 ohm

E-LALF-W2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.3 W

18.9 V

12.4 V

SILICON

BZW03-C27/30112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

38.1 V

25.1 V

SILICON

BZW03-C10/21133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

40 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

14.8 V

9.4 V

SILICON

BZW03-C200/22112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

276 V

188 V

SILICON

BZA456A,165

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

24 W

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

5.6 V

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

.72 W

8 V

e3

30

260

SILICON

BZW03-C33/33112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

46.2 V

31 V

SILICON

BZA420AT/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

19.6 W

AVALANCHE

.1 uA

4

SMALL OUTLINE

Transient Suppressors

21 V

150 Cel

-65 Cel

TIN

R-PDSO-G6

UNIDIRECTIONAL

Not Qualified

.72 W

48 pF

28 V

e3

SILICON

BZW03-C200/21133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

276 V

188 V

SILICON

MMBZ33VAL/DG,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

YES

33 V

Transient Suppressors

26 V

BIDIRECTIONAL

46 V

BZW03-C390/41112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

537 V

370 V

SILICON

BZT03-C24

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

25 mA

SINGLE

24 V

300 W

ZENER

5 uA

1

LONG FORM

Voltage Reference Diodes

5 %

175 Cel

15 ohm

E-LALF-W2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.3 W

33.8 V

22.8 V

SILICON

PSMA10A/T3

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

AVALANCHE

1

SMALL OUTLINE

10 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

DO-214AC

11.1 V

SILICON

BZW03-C360/33112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

498 V

340 V

SILICON

BZW03-C180/30133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

249 V

168 V

SILICON

PESD5V0L5UK

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

30 W

AVALANCHE

5

CHIP CARRIER

5 V

150 Cel

S-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

6.47 V

SILICON

7.14 V

BZT03-C39

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

10 mA

SINGLE

39 V

300 W

ZENER

5 uA

1

LONG FORM

Voltage Reference Diodes

5 %

175 Cel

40 ohm

E-LALF-W2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.3 W

54.1 V

37 V

SILICON

BZW03-C12/33133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

20 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

17 V

11.4 V

SILICON

PESD12VS2UAT,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

180 W

15 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

12 V

150 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

14.7 V

e3

30

260

SILICON

15.3 V

PESD5V0L5UF,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

25 W

6.8 V

AVALANCHE

.025 uA

5

5 V

BOTTOM

Transient Suppressors

5 V

150 Cel

-65 Cel

TIN

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

MO-252

12 V

6.4 V

e3

30

260

SILICON

7.2 V

AEC-Q101

BZW03-C47/21133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

65.5 V

44 V

SILICON

BZW03-C30/22112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

42.2 V

28 V

SILICON

BZT03-C36AMO

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

300 W

ZENER

5 uA

1

LONG FORM

175 Cel

E-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.3 W

50.1 V

34 V

SILICON

BZT03-C75

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

10 mA

SINGLE

75 V

300 W

ZENER

5 uA

1

LONG FORM

Voltage Reference Diodes

6.5 %

175 Cel

100 ohm

E-LALF-W2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.3 W

103.5 V

70 V

SILICON

BZA868A,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

24 W

AVALANCHE

4

SMALL OUTLINE

TIN

R-PDSO-G5

UNIDIRECTIONAL

Not Qualified

.335 W

6.46 V

e3

SILICON

7.14 V

BZT03-C20AMO

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

300 W

ZENER

5 uA

1

LONG FORM

175 Cel

E-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.3 W

28.4 V

18.8 V

SILICON

BZW03-C8V2/30113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

2400 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

12.3 V

7.7 V

SILICON

BZW03-C8V2T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

150 mA

SINGLE

8.2 V

500 W

ZENER

2400 uA

1

LONG FORM

Voltage Reference Diodes

5 %

175 Cel

1.5 ohm

E-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

12.3 V

7.7 V

SILICON

BZW03-C180/33133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

249 V

168 V

SILICON

BZW03-C9V1/50112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

100 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

13.3 V

8.5 V

SILICON

BZT03-C7V5T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

300 W

ZENER

1500 uA

1

LONG FORM

175 Cel

E-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.3 W

11.3 V

7 V

SILICON

BZW03-C91/22112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

126 V

85 V

SILICON

BZW03-C8V2/20113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

2400 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

12.3 V

7.7 V

SILICON

BZW03-C360/30112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

498 V

340 V

SILICON

BZW03-C47/20133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

65.5 V

44 V

SILICON

BZW03-C68/40112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

94.4 V

64 V

SILICON

IP4286CZ6-TBF,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

YES

7.5 V

Transient Suppressors

Tin (Sn)

1

UNIDIRECTIONAL

e3

BZW03-C110/20133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

152 V

104 V

SILICON

BZW03-C160/33133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

224 V

153 V

SILICON

BZW03-C24/50133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

33.8 V

22.8 V

SILICON

BZW03-C100/41133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

139 V

94 V

SILICON

BZW03-C150/21113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

204 V

138 V

SILICON

BZW03-C27/20113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

38.1 V

25.1 V

SILICON

BZW03-C62/40112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

86.5 V

58 V

SILICON

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.