NXP Semiconductors Transient Suppression Devices 2,400+

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

BZW03-C15/41112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

20.9 V

13.8 V

SILICON

BZA408B

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

20 W

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-65 Cel

Tin (Sn)

R-PDSO-G6

1

BIDIRECTIONAL

Not Qualified

.26 W

LOW CAPACITANCE

e3

30

260

SILICON

BZW03-C82/40112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

114 V

77 V

SILICON

BZW03-C20

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

65 mA

SINGLE

20 V

500 W

ZENER

10 uA

1

LONG FORM

Voltage Reference Diodes

5 %

175 Cel

3 ohm

-65 Cel

E-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

28.4 V

18.8 V

SILICON

BZW03-C18/31112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

25.6 V

16.8 V

SILICON

PRTR5V0U4Y

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

ZENER

1

SMALL OUTLINE

Transient Suppressors

TIN

R-PDSO-G6

UNIDIRECTIONAL

Not Qualified

6 V

e3

30

260

SILICON

9 V

PSMA26A

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

28.9 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

26 V

R-PDSO-C2

1

UNIDIRECTIONAL

Not Qualified

DO-214AC

42.1 V

28.9 V

SILICON

BZW03-C13/31113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

18.9 V

12.4 V

SILICON

PESD15VL2BT,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

200 W

AVALANCHE

2

SMALL OUTLINE

15 V

150 Cel

R-PDSO-G3

BIDIRECTIONAL

ULTRA LOW LEAKAGE CURRENT

TO-236AB

17.1 V

SILICON

20.3 V

IEC-60134; IEC-61000-4-2, 4-5

PESD5V0V4UW,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

16 W

6.8 V

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

TIN

R-PDSO-F5

1

UNIDIRECTIONAL

Not Qualified

13 V

6.4 V

e3

30

260

SILICON

7.2 V

BZA462A,125

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

YES

Transient Suppressors

6.2 V

TIN

1

UNIDIRECTIONAL

9 V

e3

30

260

BZA408BT/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

20 W

AVALANCHE

4

SMALL OUTLINE

5 V

150 Cel

-65 Cel

TIN

R-PDSO-G6

BIDIRECTIONAL

Not Qualified

.26 W

LOW CAPACITANCE

e3

SILICON

BZW03-C39/20113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

54.1 V

37 V

SILICON

BZW03-C24/41112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

33.8 V

22.8 V

SILICON

MMBZ18VAL/DG

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

18 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

14.5 V

R-PDSO-G3

UNIDIRECTIONAL

Not Qualified

TO-236AB

25 V

SILICON

BZT03-C62AMO

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

300 W

ZENER

5 uA

1

LONG FORM

175 Cel

E-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.3 W

86.5 V

58 V

SILICON

BZW03-C510/20133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

707 V

480 V

SILICON

BZW03-C220/20113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

305 V

208 V

SILICON

BZW03-C30/33113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

42.2 V

28 V

SILICON

BZW03-C150/22112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

204 V

138 V

SILICON

BZW03-C91/50133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

126 V

85 V

SILICON

BZW03-C10/30113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

40 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

14.8 V

9.4 V

SILICON

BZW03-C91/21112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

126 V

85 V

SILICON

BZW03-C390/41113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

537 V

370 V

SILICON

BZW03-C15T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

500 W

ZENER

10 uA

1

LONG FORM

175 Cel

E-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

20.9 V

13.8 V

SILICON

PESD5V0L1USF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

11 W

7 V

AVALANCHE

.1 uA

1

5 V

SMALL OUTLINE

5 V

150 Cel

-55 Cel

R-PDSO-N2

UNIDIRECTIONAL

9 pF

LOW CAPACITANCE

10.5 V

6 V

SILICON

8 V

BZW03-C300/30113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

419 V

280 V

SILICON

BZW03-C11/31133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

30 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

15.7 V

10.4 V

SILICON

BZW03-C220/21113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

305 V

208 V

SILICON

BZW03-C110/31113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

152 V

104 V

SILICON

BZW03-C360/40113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

498 V

340 V

SILICON

PRTR5V0U2F/T1

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ZENER

1

CHIP CARRIER

5.5 V

R-PBCC-N6

UNIDIRECTIONAL

Not Qualified

MO-252

6 V

SILICON

9 V

BZW03-C160/40113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

224 V

153 V

SILICON

PESD15VU1UT,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

200 W

AVALANCHE

2

SMALL OUTLINE

15 V

150 Cel

R-PDSO-G3

UNIDIRECTIONAL

TO-236AB

17.1 V

SILICON

20.3 V

BZW03-C430/30113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

603 V

400 V

SILICON

MMBZ20VAL/DG

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

17 V

R-PDSO-G3

UNIDIRECTIONAL

Not Qualified

TO-236AB

28 V

SILICON

BZW03-C36/30113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

50.1 V

34 V

SILICON

PESD24VS1UA

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

160 W

AVALANCHE

1

SMALL OUTLINE

24 V

Tin (Sn)

R-PDSO-G2

1

UNIDIRECTIONAL

Not Qualified

26.5 V

e3

30

260

SILICON

27.5 V

BZW03-C36/30133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

50.1 V

34 V

SILICON

BZW03-C180/50133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

249 V

168 V

SILICON

PESD18VF1BL,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

18 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

19 V

SILICON

24 V

IEC-60134; IEC-61000-4-5; IEC-61643-321

BZW03-C200/22113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

276 V

188 V

SILICON

BZT03-C330T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

300 W

ZENER

5 uA

1

LONG FORM

175 Cel

E-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.3 W

459 V

310 V

SILICON

BZW03-C33/30112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

46.2 V

31 V

SILICON

PESD24VL2BT

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

200 W

27.8 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

24 V

150 Cel

Tin (Sn)

R-PDSO-G3

1

BIDIRECTIONAL

Not Qualified

ULTRA LOW LEAKAGE CURRENT

TO-236AB

70 V

25.4 V

e3

30

260

SILICON

30.3 V

BZW03-C270/22113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

380 V

251 V

SILICON

BZW03-C13/40112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

18.9 V

12.4 V

SILICON

PESD5V0F1BRLD

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

5.5 V

125 Cel

-40 Cel

R-PDSO-N2

BIDIRECTIONAL

IEC-61643-321, LOW CAPACITANCE

6 V

SILICON

10 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.